Abstract: A storage system includes circuitry and multiple memory cells. The memory cells are arranged in multiple Word Lines (WLs), including a target WL. The circuitry includes combinational logic implemented in hardware, the circuitry configured to: read a page from a group of target memory cells in the target WL multiple times to produce multiple respective target binary readouts, read a group of neighbor memory cells in a WL neighboring to the target WL so as to produce a single neighbor binary readout, apply the combinational logic to both the target binary readouts and the neighbor binary readout to produce (i) output bits of the page, and (ii) respective binary confidence levels associated with the output bits, and transmit the output bits and the binary confidence levels to a controller.

Abstract: A method includes reading memory pages from a non-volatile memory that holds at least first memory pages having a first bit significance and second memory pages having a second bit significance, different from the first bit significance. At least some of the read memory pages are cached in a cache memory. One or more of the cached memory pages are selected for eviction from the cache memory, in accordance with a selection criterion that gives eviction preference to the memory pages of the second bit significance over the memory pages of the first bit significance. The selected memory pages are evicted from the cache memory.

Abstract: A method includes storing data in memory cells by programming the memory cells with respective values. The memory cells are read in multiple readout operations that each compares the programmed values to at least first and second read thresholds, while keeping the first read threshold fixed throughout the readout operations and perturbing only the second read threshold between the readout operations. A preferred value for the second read threshold is estimated based on the multiple readout operations.

Abstract: A method includes storing data in memory cells by programming the memory cells with respective values. The memory cells are read in multiple readout operations that each compares the programmed values to at least first and second read thresholds, while keeping the first read threshold fixed throughout the readout operations and perturbing only the second read threshold between the readout operations. A preferred value for the second read threshold is estimated based on the multiple readout operations.

Abstract: A method includes reading memory pages from a non-volatile memory that holds at least first memory pages having a first bit significance and second memory pages having a second bit significance, different from the first bit significance. At least some of the read memory pages are cached in a cache memory. One or more of the cached memory pages are selected for eviction from the cache memory, in accordance with a selection criterion that gives eviction preference to the memory pages of the second bit significance over the memory pages of the first bit significance. The selected memory pages are evicted from the cache memory.

Abstract: A method includes performing a read operation that reads data from a group of analog memory cells using at least one read threshold, to produce readout results. A detection is made that the read threshold is set in a restricted range that causes the readout results not to reflect the read threshold. The data is reproduced from the group of the memory cells while compensating for the read threshold that is set in the restricted range.