Abstract: Exemplary embodiments provide methods for patterning large areas, beyond those accessible with the limited single-area exposure techniques, with nanometer scale features. The methods can include forming a grating pattern to make a first interferometric exposure of a first portion of a photosensitive material disposed over a substrate by interfering two or more laser beams, wherein the two or more laser beams comprise an apodized intensity profile having a continuous intensity variation. The method can further include aligning and overlapping the grating pattern to expose a second portion of the photosensitive material such that the first portion and the second portion form a continuous grating pattern.

Abstract: In accordance with the invention, there are processes for creating nanostructures using interferometric lithography, and apparatus and methods for conducting interferometric lithography. The apparatus can include a light source that provides an input beam characterized by both a transverse and a longitudinal coherence length, an optical arrangement for splitting the input beam in into a first beam and a second beam, wherein the first beam and the second beam each fold onto each other, and a target including a top surface, wherein the target is disposed such that an interferometric pattern is formed by the first beam and the second beam on the top surface. The apparatus can also include a prism disposed in an optical path of the first beam and an optical path of the second beam, and an immersion liquid disposed over the target and forming a continuous optical element between the prism and the target.