Abstract: Hybrid alignment markings with a plurality of parallel marks on an active area of a silicon layer on which a multilayer structure are formed by forming initial marks in the active area by modifying the profile of the active area producing an active area surface of the active area with initial marks and then forming on the active area surface a set of interleaved marks from a second, polysilicon layer to form a single composite alignment marking composed of the initial marks and the interleaved marks. One technique is to form shallow steps with shallow trenches with low mesas in the silicon layer followed by forming low ribs of the second, polysilicon layer on the low mesas adjacent interleaved with the shallow trenches. Alternatively, form shallow cavities with low ribs in the silicon layer forming exposed low cavity surfaces of the silicon layer, and then form additional low ribs of a polysilicon layer in the shallow cavities on the exposed low cavity surfaces of the silicon layer.