Abstract: A low-impedance, high-current coaxial line for a plasma process system includes a tubular thermally conductive electric insulator; an electric outer conductor which is arranged on the insulator in the form of an outer layer; and an electric inner conductor which is arranged in the insulator in the form of an inner layer. The inner and outer diameters of the insulator are dimensioned such that the insulator is configured to have a line impedance of ?20?. The low-impedance, high-current coaxial line is configured to connect to an impedance adaptation circuit and a plasma process assembly. The low-impedance, high-current coaxial line is configured to supply the plasma process assembly with high frequency (HF) power by means of an HF power supply.

Abstract: A control device for controlling a plasma process supply system, including a radio-frequency (RF) generator and an impedance matching circuit configured for connection to a load. The control device is configured to determine a supply power of the RF generator and an output power of the impedance matching circuit. The control device is configured to change a frequency of the RF generator and/or to adjust the impedance matching circuit such that an overall efficiency of the plasma process supply system, which results from the determined supply power of the RF generator and the output power of the impedance matching circuit, is increased.

Abstract: A method for igniting and/or maintaining a plasma process using a pulsed high-frequency signal includes generating the pulsed high-frequency signal, changing a frequency of the high-frequency signal according to a frequency sweep and/or changing an amplitude of the high-frequency signal according to a power sweep during a predetermined first time interval within a pulse, monitoring at least one process parameter of the plasma process, determining a relationship of the at least one process parameter to the frequency sweep or the power sweep, and detecting whether the at least one process parameter having the relationship to the frequency sweep or the power sweep has assumed a predetermined value or is in a predetermined value range.

Abstract: The invention relates to high-frequency amplifier apparatuses suitable for generating power outputs of at least 1 kW at frequencies of at least 2 MHz. The apparatuses include two LDMOS transistors each connected by their source connection to ground. The transistors can have the same design and can be arranged in an assembly (package). The apparatus also includes a circuit board lying against a cooling plate, which can be connected to ground, and the assembly is arranged on or against the circuit board. The apparatuses have a power transformer, whose primary winding is connected to the drain connections of the transistors, and a signal transmitter. A secondary winding of the signal transmitter can be connected to the gate connections of the two transistors. Each of the gate connections can be connected to ground via at least one voltage-limiting structural element.

Abstract: The invention relates to high-frequency amplifier apparatuses suitable for generating power outputs of at least 1 kW at frequencies of at least 2 MHz. The apparatuses include two LDMOS transistors each connected by their source connection to ground. The transistors can have the same design and can be arranged in an assembly (package). The apparatus also includes a circuit board lying flat against a metallic cooling plate and connected to the cooling plate, which can be connected to ground, and the assembly is arranged on or against the circuit board. The apparatuses have a power transformer, whose primary winding is connected to the drain connections of the transistors, and a signal transmitter. A secondary winding of the signal transmitter is connected to the gate connections of the two transistors. Each of the gate connections is connected to ground via at least one voltage-limiting structural element.

Abstract: A non-linear high-frequency amplifier arrangement suitable for generating power outputs >1kW at frequencies of >1MHz for plasma excitation is provided. The arrangement includes two LDMOS transistors each connected by their source connection to aground connection point, where the LDMOS transistors have the same design and are arranged in an assembly, a power transformer whose primary winding is connected to drain connections of the LDMOS transistors, a signal transformer whose secondary winding is connected by a first end to a gate connection of one LDMOS transistor and by a second end to a gate connection of the other LDMOS transistor, and a feedback path from the drain connection to the gate connection of each of the LDMOS transistors.

Abstract: A non-linear high-frequency amplifier arrangement suitable for generating power outputs ?1 kW at frequencies of ?1 MHz for plasma excitation is provided. The arrangement includes two LDMOS transistors each connected by their source connection to aground connection point, where the LDMOS transistors have the same design and are arranged in an assembly, a power transformer whose primary winding is connected to drain connections of the LDMOS transistors, a signal transformer whose secondary winding is connected by a first end to a gate connection of one LDMOS transistor and by a second end to a gate connection of the other LDMOS transistor, and a feedback path from the drain connection to the gate connection of each of the LDMOS transistors.

Abstract: A power combiner for coupling, splitting, or coupling and splitting high-frequency signals, the power combiner has a first input for a first high-frequency signal, a second input for a second high-frequency signal, an output, an equalizing connection, a first electrical conductor arranged between the first input and the output, wherein the first electrical conductor has a first total surface shaped primarily as a first planar surface electrode, a second electrical conductor arranged between the second input and the equalizing connection, wherein the second electrical conductor has a second total surface shaped primarily as a second planar surface electrode, and wherein the second electrical conductor is capacitively and inductively coupled to the first electrical conductor; and a cooling body, wherein more than 70% of the first total surface of the first electrical conductor is a same distance from the cooling body as the second total surface of the second electrical conductor.

Abstract: This disclosure relates to directional couplers and methods of tuning directional couplers formed in a printed circuit board. The directional couplers include a main line for transmitting power and at least one secondary line having a coupling portion arranged parallel and at a distance from the main line in a coupling region. The directional coupler includes one or more additional coupling lines that have a coupling portion that runs parallel to and at a distance from the coupling section of the at least one secondary line. The one or more additional coupling lines have a connection arranged on the outer portion of the printed circuit board for selective grounding or connection to an external connection.

Abstract: High-frequency amplifier apparatuses suitable for producing output powers of at least 1 kW at frequencies of at least 2 MHz for plasma excitation are disclosed. These high-frequency amplifiers include two transistors, the source or emitter connections of which are each connected to a ground connection point. The transistors can have an identical design and are arranged on a multilayer printed circuit board. The apparatus also includes a power transformer, the primary winding of which is connected to the drain or collector connections of the transistors. The primary winding and the secondary winding of the power transformer are each in the form of planar conductor tracks which are arranged in different upper layers of the multilayer printed circuit board.

Abstract: A power supply system includes a power converter configured to generate a high-frequency power signal and be connected to a load to supply a plasma process or gas laser process with power. The power converter includes at least one amplifier stage having first and second amplifier paths each having an amplifier. The first and second amplifier path are connected to a phase-shifting coupler unit that is configured to couple phase-shifted output signals from the first and second amplifier paths to form the high-frequency power signal. At least one amplifier of the first and second amplifier paths includes a field effect transistor implemented in a semiconductor device with a semiconductor structure having a substantially layered construction, and the semiconductor device includes a channel, a current flowing in the channel substantially in parallel with layers of the semiconductor structure.

Abstract: A power combiner in the form of a balanced LC combiner is provided. Inputs of the power combiner are isolated from one another via at least one RC matching element. The at least one RC matching element is dimensioned such that the connection between the inputs is at a stable potential during operation of the power combiner at at least one position. The power combiner can be formed in a planar design and have electrically conductive layers running parallel to one another. At least an inductor and a combiner capacitor are formed in the electrically conductive layers. A power combiner arrangement including the power combiner and high-frequency signal sources attached at least two inputs is also provided. The high-frequency signal sources can be in the form of frequency-agile transistor amplifiers.

Abstract: A power supply system includes a power converter configured to generate a high-frequency power signal and be connected to a load to supply a plasma process or gas laser process with power. The power converter includes at least one amplifier stage having first and second amplifier paths each having an amplifier. The first and second amplifier path are connected to a phase-shifting coupler unit that is configured to couple phase-shifted output signals from the first and second amplifier paths to form the high-frequency power signal. At least one amplifier of the first and second amplifier paths includes a field effect transistor implemented in a semiconductor device with a semiconductor structure having a substantially layered construction, and the semiconductor device includes a channel, a current flowing in the channel substantially in parallel with layers of the semiconductor structure.

Abstract: A power supply system includes a power converter configured to generate a high-frequency power signal and be connected to a load to supply a plasma process or gas laser process with power. The power converter includes at least one amplifier stage having first and second amplifier paths each having an amplifier. The first and second amplifier path are connected to a phase-shifting coupler unit that is configured to couple phase-shifted output signals from the first and second amplifier paths to form the high-frequency power signal. At least one amplifier of the first and second amplifier paths includes a field effect transistor implemented in a semiconductor device with a semiconductor structure having a substantially layered construction, and the semiconductor device includes a channel, a current flowing in the channel substantially in parallel with layers of the semiconductor structure.

Abstract: A non-linear high-frequency amplifier arrangement suitable for generating power outputs ?1 kW at frequencies of ?1 MHz for plasma excitation is provided. The arrangement includes two LDMOS transistors each connected by their source connection to aground connection point, where the LDMOS transistors have the same design and are arranged in an assembly, a power transformer whose primary winding is connected to drain connections of the LDMOS transistors, a signal transformer whose secondary winding is connected by a first end to a gate connection of one LDMOS transistor and by a second end to a gate connection of the other LDMOS transistor, and a feedback path from the drain connection to the gate connection of each of the LDMOS transistors.

Abstract: A power combiner for coupling, splitting, or coupling and splitting high-frequency signals, the power combiner has a first input for a first high-frequency signal, a second input for a second high-frequency signal, an output, an equalizing connection, a first electrical conductor arranged between the first input and the output, wherein the first electrical conductor has a first total surface shaped primarily as a first planar surface electrode, a second electrical conductor arranged between the second input and the equalizing connection, wherein the second electrical conductor has a second total surface shaped primarily as a second planar surface electrode, and wherein the second electrical conductor is capacitively and inductively coupled to the first electrical conductor; and a cooling body, wherein more than 70% of the first total surface of the first electrical conductor is a same distance from the cooling body as the second total surface of the second electrical conductor.

Abstract: The invention relates to high-frequency amplifier apparatuses suitable for generating power outputs of at least 1 kW at frequencies of at least 2 MHz. The apparatuses include two LDMOS transistors each connected by their source connection to ground. The transistors can have the same design and can be arranged in an assembly (package). The apparatus also includes a circuit board lying flat against a metallic cooling plate and connected to the cooling plate, which can be connected to ground, and the assembly is arranged on or against the circuit board. The apparatuses have a power transformer, whose primary winding is connected to the drain connections of the transistors, and a signal transmitter. A secondary winding of the signal transmitter is connected to the gate connections of the two transistors. Each of the gate connections is connected to ground via at least one voltage-limiting structural element.

Abstract: A power combiner in the form of a balanced LC combiner is provided. Inputs of the power combiner are isolated from one another via at least one RC matching element. The at least one RC matching element is dimensioned such that the connection between the inputs is at a stable potential during operation of the power combiner at at least one position. The power combiner can be formed in a planar design and have electrically conductive layers running parallel to one another. At least an inductor and a combiner capacitor are formed in the electrically conductive layers. A power combiner arrangement including the power combiner and high-frequency signal sources attached at least two inputs is also provided. The high-frequency signal sources can be in the form of frequency-agile transistor amplifiers.

Abstract: This disclosure relates to directional couplers and methods of tuning directional couplers formed in a printed circuit board. The directional couplers include a main line for transmitting power and at least one secondary line having a coupling portion arranged parallel and at a distance from the main line in a coupling region. The directional coupler includes one or more additional coupling lines that have a coupling portion that runs parallel to and at a distance from the coupling section of the at least one secondary line. The one or more additional coupling lines have a connection arranged on the outer portion of the printed circuit board for selective grounding or connection to an external connection.

Abstract: High-frequency amplifier apparatuses suitable for producing output powers of at least 1 kW at frequencies of at least 2 MHz for plasma excitation are disclosed. These high-frequency amplifiers include two transistors, the source or emitter connections of which are each connected to a ground connection point. The transistors can have an identical design and are arranged on a multilayer printed circuit board. The apparatus also includes a power transformer, the primary winding of which is connected to the drain or collector connections of the transistors. The primary winding and the secondary winding of the power transformer are each in the form of planar conductor tracks which are arranged in different upper layers of the multilayer printed circuit board.