Abstract: The invention relates to a DEPFET comprising: a semiconductor substrate (100) of a first conduction type, which has a first main surface (101) and a second main surface (102), which are opposite one another; a source terminal region (1s) of a second conduction type on the first main surface (101); a drain terminal region (1d) of a second conduction type; a channel region (10), which is arranged between the source terminal region (1s) and the drain terminal region (1d); a gate electrode (11), which is separated from the channel region (10) by a gate insulator (6); a rear activation region (104) of a second conduction type, which is formed on the second main surface (102); and a substrate doping increase region (2) of a first conduction type, which is formed at least under the source terminal region (1s) and under the channel region (10), the substrate doping increase region (2) having a signal charge control region (20) of the first conduction type below the gate electrode (11), in which signal charge control

Abstract: An avalanche photodiode array for detecting electromagnetic radiation comprises: a semiconductor substrate (100) having a first main surface (101) and a second main surface (102), which are opposite one another, a plurality of n-doped anode regions (1) formed at the first main surface (101) and separated from one another by pixel isolation regions (7), a p-doped cathode region (3) arranged at the second main surface (102) opposite the anode regions, a drift region (4) between the plurality of anode regions (1) and the cathode region (3), and a p-doped multiplication layer (2) arranged below the plurality of anode regions (1) and below the pixel isolation regions (7), and is characterized by an n-doped field reduction layer (9) arranged below the plurality of anode regions (1) and the pixel isolation regions (7) and above the multiplication layer (2).

Abstract: The invention concerns a detector arrangement for detection of radiation, in particular particle radiation or electromagnetic radiation, with a semi-conductor detector with several pixels for detection of the radiation. It is proposed that the individual pixels each have a first subpixel (1) and a second subpixel (2). The semi-conductor detector can be switched between a first collection state, in which the first subpixel (1) is sensitive and the second subpixel (2) is insensitive so that radiation-generated signal charge carriers are substantially collected only in the first subpixel (1), and a second collection state in which the second subpixel (2) is sensitive and the first subpixel (1) is insensitive so that the radiation-generated signal charge carriers are collected substantially only in the second subpixel (2). The invention furthermore concerns a corresponding operating method and detector arrangements based on the same concept with a higher number of subpixels per pixel.

Abstract: The invention concerns a detector arrangement for detection of radiation, in particular particle radiation or electromagnetic radiation, with a semi-conductor detector with several pixels for detection of the radiation. It is proposed that the individual pixels each have a first subpixel (1) and a second subpixel (2). The semi-conductor detector can be switched between a first collection state, in which the first subpixel (1) is sensitive and the second subpixel (2) is insensitive so that radiation-generated signal charge carriers are substantially collected only in the first subpixel (1), and a second collection state in which the second subpixel (2) is sensitive and the first subpixel (1) is insensitive so that the radiation-generated signal charge carriers are collected substantially only in the second subpixel (2). The invention furthermore concerns a corresponding operating method and detector arrangements based on the same concept with a higher number of subpixels per pixel.