Abstract: A circuit configuration includes a voltage surge protector that is connected in parallel to the link capacitor to protect the link capacitor from voltage overloads. A printed circuit board assembly, an electric axle drive, and a motor vehicle are also disclosed.

Abstract: A system for analyzing a sample includes an illumination source with a plurality of transmitting optical fibers optically coupled to the illumination source and a detector with a plurality of receiving optical fibers optically coupled to the detector. The system further includes a plurality of probes coupled to respective ones of the plurality of transmitting optical fibers and respective ones of the plurality of receiving optical fibers. The plurality of probes are configured to illuminate respective portions of a surface of the sample and configured to receive illumination reflected, refracted, or radiated from the respective portions of the surface of the sample. The system may further include one or more switches and/or splitters configured to optically couple respective ones of the plurality of transmitting optical fibers to the illumination source and/or configured to optically couple respective ones of the plurality of receiving optical fibers to the detector.

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

Abstract: Methods and systems for performing semiconductor measurements based on hyperspectral imaging are presented herein. A hyperspectral imaging system images a wafer over a large field of view with high pixel density over a broad range of wavelengths. Image signals collected from a measurement area are detected at a number of pixels. The detected image signals from each pixel are spectrally analyzed separately. In some embodiments, the illumination and collection optics of a hyperspectral imaging system include fiber optical elements to direct illumination light from the illumination source to the measurement area on the surface of the specimen under measurement and fiber optical elements to image the measurement area. In another aspect, a fiber optics collector includes an image pixel mapper that couples a two dimensional array of collection fiber optical elements into a one dimensional array of pixels at the spectrometer and the hyperspectral detector.

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

Abstract: Methods and systems for performing semiconductor measurements based on hyperspectral imaging are presented herein. A hyperspectral imaging system images a wafer over a large field of view with high pixel density over a broad range of wavelengths. Image signals collected from a measurement area are detected at a number of pixels. The detected image signals from each pixel are spectrally analyzed separately. In some embodiments, the illumination and collection optics of a hyperspectral imaging system include fiber optical elements to direct illumination light from the illumination source to the measurement area on the surface of the specimen under measurement and fiber optical elements to image the measurement area. In another aspect, a fiber optics collector includes an image pixel mapper that couples a two dimensional array of collection fiber optical elements into a one dimensional array of pixels at the spectrometer and the hyperspectral detector.

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

Abstract: Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.

Abstract: A system for analyzing a sample includes an illumination source with a plurality of transmitting optical fibers optically coupled to the illumination source and a detector with a plurality of receiving optical fibers optically coupled to the detector. The system further includes a plurality of probes coupled to respective ones of the plurality of transmitting optical fibers and respective ones of the plurality of receiving optical fibers. The plurality of probes are configured to illuminate respective portions of a surface of the sample and configured to receive illumination reflected, refracted, or radiated from the respective portions of the surface of the sample. The system may further include one or more switches and/or splitters configured to optically couple respective ones of the plurality of transmitting optical fibers to the illumination source and/or configured to optically couple respective ones of the plurality of receiving optical fibers to the detector.

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

Abstract: Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.

Abstract: Methods and systems for performing simultaneous spectroscopic measurements of semiconductor structures over a broad range of angles of incidence (AOI), azimuth angles, or both, are presented herein. Spectra including two or more sub-ranges of angles of incidence, azimuth angles, or both, are simultaneously measured over different sensor areas at high throughput. Collected light is linearly dispersed across different photosensitive areas of one or more detectors according to wavelength for each subrange of AOIs, azimuth angles, or both. Each different photosensitive area is arranged on the one or more detectors to perform a separate spectroscopic measurement for each different range of AOIs, azimuth angles, or both. In this manner, a broad range of AOIs, azimuth angles, or both, are detected with high signal to noise ratio, simultaneously. This approach enables high throughput measurements of high aspect ratio structures with high throughput, precision, and accuracy.

Abstract: Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.

Abstract: Methods and systems for performing simultaneous spectroscopic measurements of semiconductor structures over a broad range of angles of incidence (AOI), azimuth angles, or both, are presented herein. Spectra including two or more sub-ranges of angles of incidence, azimuth angles, or both, are simultaneously measured over different sensor areas at high throughput. Collected light is linearly dispersed across different photosensitive areas of one or more detectors according to wavelength for each subrange of AOIs, azimuth angles, or both. Each different photosensitive area is arranged on the one or more detectors to perform a separate spectroscopic measurement for each different range of AOIs, azimuth angles, or both. In this manner, a broad range of AOIs, azimuth angles, or both, are detected with high signal to noise ratio, simultaneously. This approach enables high throughput measurements of high aspect ratio structures with high throughput, precision, and accuracy.

Abstract: Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.

Abstract: A system, a method and a coordinate measuring machine is disclosed for determining the position of defects on objects. An interface is provided so that alignment and coordinate information from the inspection device can be sent to the coordinate measuring machine. A special illumination and detection arrangement is used with a plurality of optical elements in order to obtain a signal from defects on the unpatterned object. The light source of the illumination and detection arrangement is a laser light source for providing a partially coherent light beam. A computer calculates from the data provides by the detector array and the alignment and coordinate information of the object from the inspection device a position of the defect on the object.

Abstract: A method for focusing an object plane (42) through an objective (30) and an optical assembly (10), with which the method can be carried out, are disclosed. A geometric reference structure (21) is positioned in a plane (36) conjugate to a field plane (34) of the objective (30) and is imaged onto the object plane (42). The geometric reference structure (21) is illuminated with a light beam (24), which encloses a non-zero angle (?) with a normal direction (38) of the conjugate plane (36). Therefore a position (Y) of an image (22) of the geometric reference structure (21) in the object plane (42) depends on the signed distance (37) between the object plane (42) and the field plane (34), and correspondingly is evaluated for the determination of the focus position. The optical assembly (10) preferentially may be a metrology tool (100) for measuring structures (120) on masks (100), wherein the objective (30) is the measurement objective of the metrology tool (100).

Abstract: An apparatus (1) for the optical inspection of wafers is disclosed, which comprises an assembly unit (10) which carries optical elements (30, 31, 32, 33) of at least one illumination path (3) for a bright field illumination and optical elements (50, 51, 52, 60, 61, 62, 70, 71, 72, 80, 81, 82) of at least one illumination path (5, 6, 7, 8) for a dark field illumination. The assembly unit (10) furthermore carries plural optical elements (91, 92, 93, 94, 95, 96, 97, 98, 99, 100) of at least one detection path (91, 92). An imaging optical element (32) of the at least one illumination path (3) for the bright field illumination (30), imaging optical elements (51, 61, 71, 81) of the at least one illumination path for the dark field illumination, and imaging optical elements (91, 95, 96) of the at least one detection path (9) are designed in such a way that all illumination paths (3, 5, 6, 7, 8) and all detection paths (91, 92) are telecentric.

Abstract: A method for focusing an object plane (42) through an objective (30) and an optical assembly (10), with which the method can be carried out, are disclosed. A geometric reference structure (21) is positioned in a plane (36) conjugate to a field plane (34) of the objective (30) and is imaged onto the object plane (42). The geometric reference structure (21) is illuminated with a light beam (24), which encloses a non-zero angle (?) with a normal direction (38) of the conjugate plane (36). Therefore a position (Y) of an image (22) of the geometric reference structure (21) in the object plane (42) depends on the signed distance (37) between the object plane (42) and the field plane (34), and correspondingly is evaluated for the determination of the focus position. The optical assembly (10) preferentially may be a metrology tool (100) for measuring structures (120) on masks (100), wherein the objective (30) is the measurement objective of the metrology tool (100).

Abstract: An apparatus (1) for the optical inspection of wafers is disclosed, which comprises an assembly unit (10) which carries optical elements (30, 31, 32, 33) of at least one illumination path (3) for a bright field illumination and optical elements (50, 51, 52, 60, 61, 62, 70, 71, 72, 80, 81, 82) of at least one illumination path (5, 6, 7, 8) for a dark field illumination. The assembly unit (10) furthermore carries plural optical elements (91, 92, 93, 94, 95, 96, 97, 98, 99, 100) of at least one detection path (91, 92). An imaging optical element (32) of the at least one illumination path (3) for the bright field illumination (30), imaging optical elements (51, 61, 71, 81) of the at least one illumination path for the dark field illumination, and imaging optical elements (91, 95, 96) of the at least one detection path (9) are designed in such a way that all illumination paths (3, 5, 6, 7, 8) and all detection paths (91, 92) are telecentric.