Abstract: The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.

Abstract: An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. The edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2×10?4 and by at most 5×10?3.

Abstract: The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.

Abstract: The present invention relates to the use of a viscose fibre for the production of a transparent cosmetic mask. The use according to the invention is characterized in that the viscose fibre is a flat fibre, the cross section of the viscose fibre has a width-to-thickness ratio of 6:1 to 30:1, and the titre of the viscose fibre ranges from 1.0 dtex to 4 dtex.

Abstract: A laser diode includes an active zone that emits radiation in a lateral emission angle range in a plane of the active zone via an emission side of a layer arrangement, an electrical contact is configured on a top side of the layer arrangement, the electrical contact includes a metallic adhesion layer and at least one metallic contact layer, the adhesion layer is arranged on the layer arrangement, the adhesion layer includes a layer stack including a first and a second layer, the first layer is arranged on the layer arrangement, the first layer is configured in a planar fashion, the second layer is subdivided into at least one first and at least one second partial surface, the adhesion layer is arranged in the first partial surface, and the contact layer is arranged on the first partial surface and in the second partial surface.

Abstract: A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.

Abstract: An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. The edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2×10?4 and by at most 5×10?3.

Abstract: In a method for determining a depth map from stereo images, the disparity for a pixel is selected from a predefined quantity or set of predefined discrete disparity values that are distributed over the entire predefined disparity value range, whereby the distribution is non-uniform or has at least two different distances or intervals between different adjacent disparity values. This method makes it possible to more precisely determine (with finer resolution) especially only those disparities for which a more precise determination is required.

Abstract: A semiconductor laser diode is specified, comprising a semiconductor layer sequence (1) with semiconductor layers applied vertically one above another with an active layer (11), which emits laser radiation via a radiation coupling-out surface during operation, wherein the radiation coupling-out surface is formed by a side surface of the semiconductor layer sequence (1), and a heat barrier layer (2) and a metallic contact layer (5) laterally adjacent to one another on a main surface (12) of the semiconductor layer sequence (1), wherein the heat barrier layer (2) is formed by an electrically insulating porous material (9). As a result, the heat arising during operation is conducted via the p-type electrode (5) to a heat sink (20) and the formation of a two-dimensional temperature gradient is avoided. A thermal lens in the edge emitter is thus counteracted. Furthermore, a method for producing a semiconductor laser diode and a semiconductor laser diode arrangement are specified.

Abstract: An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. In an embodiment, the edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2×10?4 and by at most 5×10?3.

Abstract: A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.

Abstract: A laser diode includes an active zone that emits radiation in a lateral emission angle range in a plane of the active zone via an emission side of a layer arrangement, an electrical contact is configured on a top side of the layer arrangement, the electrical contact includes a metallic adhesion layer and at least one metallic contact layer, the adhesion layer is arranged on the layer arrangement, the adhesion layer includes a layer stack including a first and a second layer, the first layer is arranged on the layer arrangement, the first layer is configured in a planar fashion, the second layer is subdivided into at least one first and at least one second partial surface, the adhesion layer is arranged in the first partial surface, and the contact layer is arranged on the first partial surface and in the second partial surface.

Abstract: An object-recognition method for a vehicle's driver assistance system involves obtaining a 2D image and a 3D image, forming a 3D apparent object from the 3D image, detecting one or more detected objects in a portion of the 2D image corresponding to the apparent object from the 3D image, classifying the one or more detected objects into at least one pre-defined object class, and dividing the apparent object into at least two 3D objects when the apparent object does not correspond with at least one class-specific property of the determined at least one object class.

Abstract: An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. In an embodiment, the edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2×10?4 and by at most 5×10?3.

Abstract: A semiconductor laser diode is provided. In an embodiment the semiconductor laser diode includes a semiconductor layer sequence having semiconductor layers disposed vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 ?m emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.

Abstract: The invention relates to a method for determining a depth map from stereo images. The disparity for a pixel is determined from a discrete quantity of predefined disparity values, said disparity values are distributed over the entire predefined disparity value range and said distribution has at least two different distances between adjacent disparity values. One advantage of the method according to the invention is that it allows only those disparities for which a more precise determination is required to be more precisely calculated.

Abstract: A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 ?m emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.

Abstract: In a method for determining a depth map from stereo images, the disparity for a pixel is determined from a discrete quantity of predefined disparity values that are distributed over the entire predefined disparity value range. The distribution has at least two different distances between different pairs of adjacent disparity values. In this method, it is possible that only those disparities for which a more precise determination is required, will be more precisely calculated.

Abstract: The invention relates to an optical rotary transmitter for transmitting optical signals, comprising a first light coupler (1) that has one or a plurality of first light guides (11) the end faces of which are designed to transmit optical signals and are arranged on a first ring about a central rotational axis Z, a second light coupler (3) that has one or a plurality of second light guides (31) the end faces of which are designed to transmit optical signals and are arranged on a second ring about the central rotational axis Z, a fiber mirror (5) comprising a plurality of third light guides that are arranged between said two light couplers (1,3) and are designed to compensate for the effect, on the transmission of the optical signals, of the two light couplers (1,3) rotating relative to one another, the end faces of the third light guides being designed to transmit optical signals and arranged on a third and fourth ring about the central rotational axis Z.

Abstract: The invention relates to a method and a device for detecting objects. The method comprises the following steps: forming at least one object from a depth image of a 3D camera evaluating and classifying the one or more objects (2, 3) in a 2D image (5) which corresponds to the at least one formed object in the depth image (1), possibly dividing the at least one object (1) formed from the depth image into a plurality of individual objects (2, 3) while taking into account the classification of the one or more objects (2, 3) in the 2D image (5). The method and the device can be used in particular within the framework of a driver assistance system for detecting objects in a vehicle environment.