Abstract: A truck-mountable detection system for detection of a first coupling device of a container, in which the first coupling device is configured for coupling with a second coupling device of a truck-mounted loading equipment, in particular a hook of a hookloader. The detection system includes a data processor and an data capturing device, the data of which can be sent to the data processor. The data capturing device is a stereographic sensor system, and the data processor is configured to automatically recognize the shape of the first coupling device of the container based on the data provided by the stereographic sensor system.

Abstract: A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi4Al3N9, SrSiAl2O3N2, BaSi2N2O2, ALi3XO4, M*(1?x*?y*?z*) Z*z*[A*a*B*b*C*c*D*d*E*e*N4-n*On*], and combinations thereof.

Abstract: The optoelectronic device including a radiation emitting semiconductor chip emitting electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range at least partially and emitting electromagnetic radiation from a light coupling-out surface, wherein the light coupling-out surface of the conversion element is smaller than the radiation exit surface of the semiconductor chip.

Abstract: A phosphor and a method for making the phosphor are disclosed. In an embodiment a phosphor for emission of red light includes Sr(SraCa1-a)Si2Al2N6:Eu, wherein x is 0.8<x?1, wherein between 0.1% and 5% inclusive of the Sr, Ca and/or Sr/Ca lattice sites are replaced by Eu, wherein the parameter value a is between 0.6 and 1.0 inclusive, wherein the phosphor has a structure comprising (Si/Al)N4 tetrahedra arranged in a 3D network, in which layers in an a-c plane are linked in a b-direction, and wherein pure Sr positions and positions having a mixed Sr/Ca population are intercalated between the network, layer by layer.

Abstract: In an embodiment a radiation emitting device includes a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface and a potting comprising a matrix material and a plurality of nanoparticles, wherein a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip so that a refractive index of the potting decreases starting from the radiation exit surface of the semiconductor chip, and wherein the nanoparticles are coated with a shell.

Abstract: A radiation-emitting component may include a first semiconductor chip to emit blue light, a second semiconductor chip to emit cyan-colored light, and a conversion element to emit secondary radiation. The conversion element may be arranged downstream of the first semiconductor chip and the second semiconductor chip. The conversion element emits the secondary radiation under excitation with the blue light of the first semiconductor chip, and the secondary radiation mixes with the blue light to form warm white light.

Abstract: A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi4Al3N9, SrSiAl2O3N2, BaSi2N2O2, ALi3XO4, M*(1-x*-y*-z*)Z*z*[A*a*B*b*C*c*D*d*E*e*N4-n*On*], and combinations thereof.

Abstract: An optoelectronic component includes a semiconductor chip that emits primary radiation from the blue spectral region, a conversion element including at least three phosphors each converting the primary radiation into secondary radiation, wherein the first phosphor emits secondary radiation from the green spectral region, the second phosphor emits secondary radiation from the red spectral region, the third phosphor is a potassium-silicon-fluoride phosphor that emits secondary radiation from the red spectral region, and the component has an Ra value of at least 80 and an R9 value of at least 75, and emits white mixed radiation.

Abstract: A phosphor and a method for making the phosphor are disclosed. In an embodiment a phosphor for emission of red light includes SrxCa1?xAlSiN3:Eu, wherein x is: 0.8<x?1, wherein between 0.1% and 5% inclusive of the Sr, Ca and/or Sr/Ca lattice sites are replaced by Eu, wherein, in a x-ray structure analysis, the phosphor in orthorhombic description exhibits a reflection (R) having Miller indices 1 2 1, wherein the phosphor has a structure including (Si/Al)N4 tetrahedra arranged in a 3D network, in which layers in an a-c plane are linked in a b-direction, and wherein pure Sr positions and positions having a mixed Sr/Ca population are intercalated between the network, layer by layer.

Abstract: A truck-mountable detection system for detection of a first coupling device of a container, in which the first coupling device is configured for coupling with a second coupling device of a truck-mounted loading equipment, in particular a hook of a hookloader. The detection system includes a data processor and an data capturing device, the data of which can be sent to the data processor. The data capturing device is a stereographic sensor system, and the data processor is configured to automatically recognize the shape of the first coupling device of the container based on the data provided by the stereographic sensor system.

Abstract: A phosphor and a lighting device are disclosed. In an embodiment a lighting device includes a first phosphor disposed in a beam path of the primary radiation source, wherein the first phosphor has the formula Sr(SraM1?a)Si2Al2(N,X)6:D,A,B,E,G,L, wherein element M is selected from Ca, Ba, Mg or combinations thereof, wherein element D is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals or Yb, wherein element A is selected from divalent metals different than those of the elements M and D, wherein element B is selected from trivalent metals, wherein element E is selected from monovalent metals, wherein element G is selected from tetravalent elements, wherein element L is selected from trivalent elements, wherein element X is selected from O or halogen, and wherein a parameter a is between 0.6 and 1.0.

Abstract: The optoelectronic device including a radiation emitting semiconductor chip emitting electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range at least partially and emitting electromagnetic radiation from a light coupling-out surface, wherein the light coupling-out surface of the conversion element is smaller than the radiation exit surface of the semiconductor chip.

Abstract: An optoelectronic component includes a semiconductor chip that emits primary radiation from the blue spectral region, a conversion element including at least three phosphors each converting the primary radiation into secondary radiation, wherein the first phosphor emits secondary radiation from the green spectral region, the second phosphor emits secondary radiation from the red spectral region, the third phosphor is a potassium-silicon-fluoride phosphor that emits secondary radiation from the red spectral region, and the component has an Ra value of at least 80 and an R9 value of at least 75, and emits white mixed radiation.

Abstract: A phosphor and a lighting device are disclosed. In an embodiment a lighting device includes a first phosphor disposed in a beam path of the primary radiation source, wherein the first phosphor has the formula Sr(SraM1?a)Si2Al2(N,X)6:D,A,B,E,G,L, wherein element M is selected from Ca, Ba, Mg or combinations thereof, wherein element D is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals or Yb, wherein element A is selected from divalent metals different than those of the elements M and D, wherein element B is selected from trivalent metals, wherein element E is selected from monovalent metals, wherein element G is selected from tetravalent elements, wherein element L is selected from trivalent elements, wherein element X is selected from O or halogen, and wherein a parameter a is between 0.6 and 1.0.

Abstract: A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element A1, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, A1 includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SraCa1-a)Si2Al2N61.

Abstract: A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element Al, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, Al includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SraCa1-a)Si2Al2N61.

Abstract: A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element Al, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, Al includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SraCa1?a)Si2Al2N61.

Abstract: A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps: providing a plurality of semiconductor bodies (1) which are suitable for emitting electromagnetic radiation from a radiation exit face (3), applying the semiconductor bodies (1) to a carrier (2), applying a first mask layer (4) to regions of the carrier (2) between the semiconductor bodies (1), applying a conversion layer (5) to the entire surface of the semiconductor bodies (1) and the first mask layer (4) using a spray coating method, and removing the first mask layer (4), such that in each case a conversion layer (5) arises on the radiation exit faces (3) of the semiconductor bodies (1).

Abstract: A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element A1, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, A1 includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SraCa1?a)Si2Al2N61.

Abstract: A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element Al, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, Al includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SraCa1?a)Si2Al2N61.