Abstract: Provided is a machining apparatus including a profile sensor unit configured to obtain shape information about a parent substrate; and a laser scan unit configured to direct a laser beam onto the parent substrate, wherein a laser beam axis of the laser beam is tilted to an exposed main surface of the parent substrate, and wherein a track of the laser beam on the parent substrate is controllable as a function of the shape information obtained from the profile sensor unit.

Abstract: Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

Abstract: A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epitaxial layers and the one or more porous layers collectively form a substrate; forming doped regions of a semiconductor device in the one or more epitaxial layers; and after forming the doped regions of the semiconductor device, separating a non-porous part of the semiconductor wafer from a remainder of the substrate along the one or more porous layers.

Abstract: A method of splitting a semiconductor work piece includes: forming a separation zone within the semiconductor work piece, wherein forming the separation zone comprises modifying semiconductor material of the semiconductor work piece at a plurality of targeted positions within the separation zone in at least one physical property which increases thermo-mechanical stress within the separation zone relative to a remainder of the semiconductor work piece, wherein modifying the semiconductor material in one of the targeted positions comprises focusing at least two laser beams to the targeted position; and applying an external force or stress to the semiconductor work piece such that at least one crack propagates along the separation zone and the semiconductor work piece splits into two separate pieces. Additional work piece splitting techniques and techniques for compensating work piece deformation that occurs during the splitting process are also described.

Abstract: Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

Abstract: Disclosed is a method. The method includes implanting recombination center particles into a semiconductor body via at least one contact hole in an insulation layer formed on top of the semiconductor body, forming a contact electrode electrically connected to the semiconductor body in the at least one contact hole, and annealing the semiconductor body to diffuse the recombination center particles in the semiconductor body. Forming the contact electrode includes forming a barrier layer on sections of the semiconductor body uncovered in the at least one contact hole, wherein the barrier layer is configured to inhibit the recombination center particles from diffusing out of the semiconductor body.

Abstract: According to various embodiments, a workpiece planarization arrangement may include: a chuck including at least one portion configured to support one or more workpieces; and a planarization tool configured to planarize the at least one portion of the chuck and to planarize one or more workpieces on the at least one portion of the chuck; wherein the at least one portion of the chuck includes at least one of particles, pores and/or a polymer.

Abstract: Disclosed is a method. The method includes implanting recombination center particles into a semiconductor body via at least one contact hole in an insulation layer formed on top of the semiconductor body, forming a contact electrode electrically connected to the semiconductor body in the at least one contact hole, and annealing the semiconductor body to diffuse the recombination center particles in the semiconductor body. Forming the contact electrode includes forming a barrier layer on sections of the semiconductor body uncovered in the at least one contact hole, wherein the barrier layer is configured to inhibit the recombination center particles from diffusing out of the semiconductor body.

Abstract: According to various embodiments, a workpiece planarization arrangement may include: a chuck including a support carrier; and a workpiece-support replaceably mounted on the support carrier; and a planarization tool configured to planarize the at least one portion of the workpiece-support and to planarize one or more workpieces on the at least one portion of the workpiece-support.

Abstract: According to various embodiments, a workpiece planarization arrangement may include: a chuck including a support carrier; and a workpiece-support replaceably mounted on the support carrier; and a planarization tool configured to planarize the at least one portion of the workpiece-support and to planarize one or more workpieces on the at least one portion of the workpiece-support.

Abstract: According to various embodiments, a workpiece planarization arrangement may include: a chuck including at least one portion configured to support one or more workpieces; and a planarization tool configured to planarize the at least one portion of the chuck and to planarize one or more workpieces on the at least one portion of the chuck; wherein the at least one portion of the chuck includes at least one of particles, pores and/or a polymer.