Abstract: The invention concerns a semiconductor component which can be controlled on the anode side and whose semiconductor body comprises a plurality of adjacent, parallel-connected unit cells having a thyristor structure. A lightly doped n-base region (3) is adjoined on both sides by highly doped p-regions constituting p-base region (2) and p-emitter region (4). The p-base region (2) is followed by a highly doped n-emitter (1) which contacts a cathode electrode (7). Integrated in the p-emitter region (4) is a first n-channel MOSFET (M1) which is connected in series with the thyristor structure by means of a floating electrode (FE). The drain electrode (5b) of the first MOSFET (M1) is provided with an outer anode (8) which has no contact with the p-emitter region (4). A second n-channel MOSFET (M2) is integrated between the n-base region (3) and the drain region (5b) of the first MOSFET (M1).

Abstract: The invention pertains to a process for producing integrated active-matrix liquid crystal displays with a checkered silicon die subdivided into picture elements. Each picture element consists of a light-controlling element and an integrated, driving electronic switching element (20) which drives the translucent electrode (16) of the picture element. The array of picture elements is covered with glass layers (6, 12) with polarizing and analyzing layers on their outer faces. The invention in characterized in that the switching elements are integrated into a transparent silicon layer in which optic windows for the lighting-controlling elements are integrated. This is done by etching out a cavity in the rear side of the silicon die in the region of the liquid crystal display, leaving a thin layer of silicon or no silicon at all in the region of the optic window. On the thicker frame (10) of the silicon die there is a drive circuit.

Abstract: A method is provided for forming a semiconductor device including a semiconductor body having a first surface and a second surface located opposite the first surface, with a plurality of vertical semiconductor components extending between the first and second surfaces. At least one partial structure having a lateral semiconductor component is disposed beneath the first surface. An electrically-insulating vertical wall surrounds the partial structure and extends into the semi-conductor body a predetermined depth from the first surface. The second surface of the semiconductor surface of the semiconductor body includes a recess in the region of the partial structure. The bottom of the recess extends to the vertical wall at the predetermined depth from the first surface. An insulating layer covers the bottom of the recess.