Abstract: The invention relates to a radiation source, comprising at least one semiconductor substrate, on which at least two field-effect transistors are formed, which each contain a gate electrode, a source contact, and a drain contact, which bound a channel, wherein the at least two field-effect transistors are arranged adjacent to each other on the substrate, wherein each field-effect transistor has exactly one gate electrode and at least one source contact and/or at least one drain contact is arranged between two adjacent gate electrodes, wherein a ballistic electron transport can be formed in the channel during operation of the radiation source. The invention further relates to a method for producing electromagnetic radiation having a vacuum wavelength between approximately 10 ?m and approximately 1 mm.

Abstract: The invention relates to a radiation source, comprising at least one semiconductor substrate, on which at least two field-effect transistors are formed, which each contain a gate electrode, a source contact, and a drain contact, which bound a channel, wherein the at least two field-effect transistors are arranged adjacent to each other on the substrate, wherein each field-effect transistor has exactly one gate electrode and at least one source contact and/or at least one drain contact is arranged between two adjacent gate electrodes, wherein a ballistic electron transport can be formed in the channel during operation of the radiation source. The invention further relates to a method for producing electromagnetic radiation having a vacuum wavelength between approximately 10 ?m and approximately 1 mm.

Abstract: The present invention relates to a semiconductor component which comprises at least one electric contact surface for the electric contacting of a semiconductor region (1) with a metal material (3). To this end, the electric contact surface is configured by a surface of a semiconductor layer that is structured in terms of the depth thereof and preferably silicidated. By configuring a three-dimensional surface topography of the semiconductor layer, an enlargement of the electric contact surface is achieved, without enlarging the surface required for the semiconductor component and without the use of additional materials. In this way, the invention can advantageously be used to reduce parasitic contact resistance in semiconductor components which are produced using standard CMOS processes.

Abstract: The present invention relates to a semiconductor component which comprises at least one electric contact surface for the electric contacting of a semiconductor region (1) with a metal material (3). To this end, the electric contact surface is configured by a surface of a semiconductor layer that is structured in terms of the depth thereof and preferably silicidated. By configuring a three-dimensional surface topography of the semiconductor layer, an enlargement of the electric contact surface is achieved, without enlarging the surface required for the semiconductor component and without the use of additional materials. In this way, the invention can advantageously be used to reduce parasitic contact resistance in semiconductor components which are produced using standard CMOS processes.

Abstract: The invention relates to an interconnection network and an integrated circuit and a method for manufacturing the same. Furthermore, the invention relates to a method for signal transfer between semiconductor structures. The invention is characterized in that a signal of a first semiconductor structure is supplied to a transmitter, which generates from the signal a plasmon wave, and couples the latter into a waveguide. The plasmons fed through the waveguide are received by a receiver, converted to an electric signal and forwarded to a second semiconductor structure.

Abstract: The invention relates to an interconnection network and an integrated circuit and a method for manufacturing the same. Furthermore, the invention relates to a method for signal transfer between semiconductor structures. The invention is characterized in that a signal of a first semiconductor structure is supplied to a transmitter, which generates from the signal a plasmon wave, and couples the latter into a waveguide. The plasmons fed through the waveguide are received by a receiver, converted to an electric signal and forwarded to a second semiconductor structure.