Abstract: A method for patterning structures including providing a layer stack having a plurality of device layers and a hardmask layer disposed in a stacked arrangement, the layer stack having a plurality of trenches formed therein, the trenches extending through the hardmask layer and into at least one of the device layers, the trenches having lateral sidewalls with a first slope relative to a plane perpendicular to upper surfaces of the device layers, and performing a sputter etching process wherein ion beams are directed toward the hardmask layer to etch the hardmask layer and cause etched material from the hardmask layer to be redistributed along the lateral sidewalls of the trenches to provide the lateral sidewalls with a second slope relative to the plane perpendicular to the upper surfaces of the device layers, the second slope less than the first slope.

Abstract: Disclosed herein are approaches for adjusting extraction slits of an extraction plate using a set of adjustable beam blockers. In one approach, an ion extraction optics may include an extraction plate including a first opening and a second opening, and a first beam blocker extending over the first opening and a second beam blocker extending over the second opening. Each of the first and second beam blockers may include an inner slit defined by a first distance between an inner edge and the extraction plate, and an outer slit defined by a second distance between an outer edge and the extraction plate, wherein the first and second beam blockers are movable to vary at least one of the first distance and the second distance. As a result, extraction through the inner and outer slits of ion beamlets characterized by similar mean angles may be achieved.

Abstract: Disclosed herein are approaches for adjusting extraction slits of an extraction plate using a set of adjustable beam blockers. In one approach, an ion extraction optics may include an extraction plate including a first opening and a second opening, and a first beam blocker extending over the first opening and a second beam blocker extending over the second opening. Each of the first and second beam blockers may include an inner slit defined by a first distance between an inner edge and the extraction plate, and an outer slit defined by a second distance between an outer edge and the extraction plate, wherein the first and second beam blockers are movable to vary at least one of the first distance and the second distance. As a result, extraction through the inner and outer slits of ion beamlets characterized by similar mean angles may be achieved.

Abstract: A method may include: providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers; depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a first insulator material; depositing an encapsulation layer on the interface layer, the encapsulation layer comprising a second insulator material; and depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising a third insulator material.

Abstract: A gas injection system, including an extraction plate having an extraction aperture for allowing passage of an ion beam through the extraction plate, the extraction plate further having a gas slot for expulsion of a residue removal gas from the extraction plate. The gas injection system may include a gas conduit extending through the extraction plate between the gas slot and a gas manifold, a gas source connected in fluid communication with the gas manifold, the gas source containing the residue removal gas. The gas manifold may include a valve adjustable between a first position, wherein the residue removal gas is allowed to flow into the extraction plate, and a second portion, wherein the residue removal gas can be vented from the extraction plate. The gas injection system may further include a manifold cover coupled to the gas manifold.

Abstract: A method may include: providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers; depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a first insulator material; depositing an encapsulation layer on the interface layer, the encapsulation layer comprising a second insulator material; and depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising a third insulator material.

Abstract: In one embodiment, a system for treating a magnetic layer includes an ion source to generate an ion beam containing ions of a desired species. The system may also include a magnetic alignment apparatus downstream of the ion source and proximate to the substrate, wherein the magnetic alignment apparatus is operable to apply a magnetic field to the magnetic layer in the substrate along a direction out of plane relative to the magnetic layer.

Abstract: A novel technique for manufacturing bit patterned media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing bit pattern media. The technique, which may be realized as a method comprising: forming a non-catalysis region on a first portion of a catalysis layer; forming a non-magnetic separator on the non-catalysis region; and forming a magnetic active region on a second portion of the catalysis layer adjacent to the first portion of the catalysis layer.

Abstract: A method of forming a magnetic memory includes providing a layer stack comprising a plurality of magnetic layers and a plurality of electrically conducting layers on a base portion of a substrate; forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, the first mask feature and second mask feature defining an exposed region of the layer stack in portions of the layer stack therebetween; and directing ions towards exposed the region of the layer stack in an ion exposure that is effective to magnetically isolate the first protected region from the second protected region and to electrically isolate the first protected region from the second protected region without removal of the exposed region of the layer stack.

Abstract: In one embodiment a magnetic memory includes a memory device base and a plurality of memory cells disposed on the memory cell base, where each memory cell includes a layer stack comprising a plurality of magnetic and electrically conductive layers arranged in a stack of layers common to each other memory cell. The magnetic memory further includes an implanted matrix disposed between the memory cells and surrounding each memory cell, where the implanted matrix includes component material of the layer stack of each memory cell inter mixed with implanted species, where the implanted matrix comprises a non-conducting material and a non-magnetic material, wherein each memory cell is electrically and magnetically isolated from each other memory cell.

Abstract: In one embodiment, a system for treating a magnetic layer includes an ion source to generate an ion beam containing ions of a desired species. The system may also include a magnetic alignment apparatus downstream of the ion source and proximate to the substrate, wherein the magnetic alignment apparatus is operable to apply a magnetic field to the magnetic layer in the substrate along a direction out of plane relative to the magnetic layer.

Abstract: In one embodiment, a system for treating a magnetic layer includes an ion generating apparatus for directing an ion beam to the substrate and a magnetic alignment apparatus downstream of the ion generating apparatus and proximate to the substrate and operative to generate a magnetic field that intercepts the substrate in an out of plane orientation with respect to a plane of the substrate. The magnetic alignment apparatus and ion generating apparatus generate a process region in which the ion beam and magnetic field overlap.

Abstract: A write head for a magnetic storage device includes a writing tip comprising a magnetic material, a write pulse generator configured to generate a write pulse signal comprising a varying voltage bias between the magnetic storage device and the writing tip. The write pulse signal comprising one or more write pulses effective to tunnel electrons from the writing tip to the magnetic storage device. The data stream generator configured to provide a data stream signal to the writing tip where the data stream signal is operative to vary spin polarity in the electrons from a first polarity to a second polarity.

Abstract: A method of patterning a substrate, comprises patterning a photoresist layer disposed on the substrate using imprint lithography and etching exposed portions of a hard mask layer disposed between the patterned photoresist layer and the substrate. The method may also comprise implanting ions into a magnetic layer in the substrate while the etched hard mask layer is disposed thereon.

Abstract: In one embodiment a magnetic memory includes a memory device base and a plurality of memory cells disposed on the memory cell base, where each memory cell includes a layer stack comprising a plurality of magnetic and electrically conductive layers arranged in a stack of layers common to each other memory cell. The magnetic memory further includes an implanted matrix disposed between the memory cells and surrounding each memory cell, where the implanted matrix includes component material of the layer stack of each memory cell inter mixed with implanted species, where the implanted matrix comprises a non-conducting material and a non-magnetic material, wherein each memory cell is electrically and magnetically isolated from each other memory cell.

Abstract: A method of forming a magnetic memory includes providing a layer stack comprising a plurality of magnetic layers and a plurality of electrically conducting layers on a base portion of a substrate; forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, the first mask feature and second mask feature defining an exposed region of the layer stack in portions of the layer stack therebetween; and directing ions towards exposed the region of the layer stack in an ion exposure that is effective to magnetically isolate the first protected region from the second protected region and to electrically isolate the first protected region from the second protected region without removal of the exposed region of the layer stack.

Abstract: A method of patterning a substrate, comprises patterning a photoresist layer disposed on the substrate using imprint lithography and etching exposed portions of a hard mask layer disposed between the patterned photoresist layer and the substrate. The method may also comprise implanting ions into a magnetic layer in the substrate while the etched hard mask layer is disposed thereon.

Abstract: A media carrier, adapted to hold a plurality of pieces of magnetic media, is disclosed. This media carrier can be placed on the workpiece support, or platen, allowing the magnetic media to be processed. In some embodiments, the media carrier is designed such that only one side of the magnetic media is exposed, requiring a robot or other equipment to invert each piece of media in the carrier to process the second side. In other embodiments, the media carrier is designed such that both sides of the magnetic media are exposed. In this scenario, the media carrier is inverted on the platen to allow processing of the second side.

Abstract: A novel, technique: for manufacturing bit patterned media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing hit pattern media. The technique, which may be realized as a method comprising: forming a non-catalysis region on a first portion of a catalysis layer; forming a non-magnetic separator on the non-catalysis region; and forming a magnetic active region on it second portion of the catalysis layer adjacent to the first portion of the catalysis layer.