Patents by Inventor Alexander Dietrich Holke
Alexander Dietrich Holke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10529866Abstract: An SOI or PSOI device including a device structure having a plurality of doped semiconductor regions. One or more of the doped semiconductor regions is in electrical communication with one or more electrical terminals. The device further includes an insulator layer located between a bottom surface of the device structure and a handle wafer. The device has an insulator trench structure located between a side surface of the device structure and a lateral semiconductor region located laterally with respect to the device structure. The insulator layer and the insulator trench structure are configured to insulate the device structure from the handle wafer and the lateral semiconductor region, and the insulator trench structure includes a plurality of insulator trenches.Type: GrantFiled: May 30, 2012Date of Patent: January 7, 2020Assignee: X-FAB SEMICONDUCTOR FOUNDRIES GMBHInventors: Elizabeth Kho Ching Tee, Alexander Dietrich Holke, Steven John Pilkington, Deb Kumar Pal
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Patent number: 9653620Abstract: A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.Type: GrantFiled: November 4, 2015Date of Patent: May 16, 2017Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AGInventors: Alexander Dietrich Hölke, Deb Kumar Pal, Kia Yaw Kee, Yang Hao
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Publication number: 20160056305Abstract: A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.Type: ApplicationFiled: November 4, 2015Publication date: February 25, 2016Applicant: X-Fab Semiconductor Foundries AGInventors: Alexander Dietrich Holke, Deb Kumar Pal, Kia Yaw Kee, Yang Hao
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Patent number: 9202937Abstract: A semiconductor device comprising: a p or p+ doped portion; an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion; an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and said at least one doped portion meet; and at least one additional portion which is arranged for significantly reducing the variation of the electric field strength in said region when a voltage difference is applied between the doped portions.Type: GrantFiled: May 14, 2010Date of Patent: December 1, 2015Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AGInventors: Alexander Dietrich Hölke, Deb Kumar Pal, Kia Yaw Kee, Hao Yang
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Patent number: 8970016Abstract: A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure.Type: GrantFiled: June 1, 2012Date of Patent: March 3, 2015Assignee: X-FAB Semiconductor Foundries AGInventors: Marina Antoniou, Florin Udrea, Elizabeth Kho Ching Tee, Steven John Pilkington, Deb Kumar Pal, Alexander Dietrich Hölke
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Publication number: 20130320511Abstract: A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure.Type: ApplicationFiled: June 1, 2012Publication date: December 5, 2013Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AGInventors: Elizabeth Kho Ching Tee, Alexander Dietrich Hölke, Steven John Pilkington, Deb Kumar Pal, Marina Antoniou, Florin Udrea
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Publication number: 20130320485Abstract: An SOI or PSOI device including a device structure having a plurality of doped semiconductor regions. One or more of the doped semiconductor regions is in electrical communication with one or more electrical terminals. The device further includes an insulator layer located between a bottom surface of the device structure and a handle wafer. The device has an insulator trench structure located between a side surface of the device structure and a lateral semiconductor region located laterally with respect to the device structure. The insulator layer and the insulator trench structure are configured to insulate the device structure from the handle wafer and the lateral semiconductor region, and the insulator trench structure includes a plurality of insulator trenches.Type: ApplicationFiled: May 30, 2012Publication date: December 5, 2013Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AGInventors: Elizabeth Kho Ching Tee, Alexander Dietrich Hölke, Steven John Pilkington, Deb Kumar Pal
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Publication number: 20130093015Abstract: A high voltage metal oxide semiconductor (HVMOS) transistor (1) comprises a drift region (8) comprising a material having a mobility which is higher than a mobility of Si. There is also provided a method of manufacturing said transistor, the method comprising forming a drift region comprising a material having a mobility which is higher than a mobility of Silicon. The material can be a Si—Ge strained material. The on- resistance is reduced compared to a transistor with a drift region made of Si, so that the trade-off between breakdown voltage and on-resistance is improved.Type: ApplicationFiled: March 1, 2010Publication date: April 18, 2013Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AGInventors: Deb Kumar Pal, Elizabeth Ching Tee Kho, Alexander Dietrich Hölke
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Publication number: 20120126377Abstract: A semiconductor device comprising: a p or p+ doped portion; an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion; an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and said at least one doped portion meet; and at least one additional portion which is arranged for significantly reducing the variation of the electric field strength in said region when a voltage difference is applied between the doped portions.Type: ApplicationFiled: May 14, 2010Publication date: May 24, 2012Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AGInventors: Alexander Dietrich Holke, Deb Kumar Pal, Kia Yaw Kee, Hao Yang