Patents by Inventor Alexander Dobrinsky
Alexander Dobrinsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170290934Abstract: A diffusive ultraviolet illuminator is provided. The illuminator can include a reflective mirror and a set of ultraviolet radiation sources located within a proximity of the focus point of the reflective mirror. The ultraviolet radiation from the set of ultraviolet radiation sources is directed towards a reflective surface located adjacent to the illuminator. The reflective surface can diffusively reflect at least 30% the ultraviolet radiation and the diffusive ultraviolet radiation can be within at least 40% of Lambertian distribution. A set of optical elements can be located between the illuminator and the reflective surface in order to direct the ultraviolet radiation towards at least 50% of the reflective surface.Type: ApplicationFiled: April 4, 2017Publication date: October 12, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur, Emmanuel Lakios
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Publication number: 20170290937Abstract: An ultraviolet (UV) footwear illuminator for footwear treatment is disclosed. In one embodiment, the UV footwear illuminator includes an insert adapted for placement in an article of footwear. At least one UV radiation source is located in the insert and is configured to emit UV radiation in the footwear through a transparent window region formed in the insert. A control unit is configured to control at least one predetermined UV radiation characteristics associated with the radiation emitted from each UV radiation source. A power supply is configured to power each UV radiation source and the control unit.Type: ApplicationFiled: June 26, 2017Publication date: October 12, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Publication number: 20170287698Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-Ill nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.Type: ApplicationFiled: June 26, 2017Publication date: October 5, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Publication number: 20170284866Abstract: An adjustable multi-wavelength lamp is described. The lamp can include a plurality of emitters. The emitters can include at least one ultraviolet emitter, at least one visible light emitter, and at least one infrared emitter. The lamp can include a control system for controlling operation of the plurality of emitters. The control system can be configured to selectively deliver power to any combination of one or more of the plurality of emitters to generate light approximating a target spectral distribution of intensity.Type: ApplicationFiled: March 28, 2017Publication date: October 5, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Yuri Bilenko, Michael Shur, Alexander Dobrinsky
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Publication number: 20170284933Abstract: An integrated ultraviolet analyzer is described. The integrated ultraviolet analyzer can include one or more ultraviolet analyzer cells, each of which includes one or more ultraviolet photodetectors and one or more solid state light sources, which are monolithically integrated. The solid state light source can be operated to emit ultraviolet light, at least some of which passes through an analyzer active gap and irradiates a light sensing surface of the ultraviolet photodetector. A medium to be evaluated can be present in the analyzer active gap and affect the ultraviolet light as it passes there through, thereby altering an effect of the ultraviolet light on a ultraviolet photodetector.Type: ApplicationFiled: March 28, 2017Publication date: October 5, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Grigory Simin, Michael Shur, Alexander Dobrinsky
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Publication number: 20170281812Abstract: An approach for treating a fluid transport conduit with ultraviolet radiation is disclosed. A light guiding unit, operatively coupled to a set of ultraviolet radiation sources, encloses the fluid transport conduit. The light guiding unit directs ultraviolet radiation emitted from the ultraviolet radiation sources to ultraviolet transparent sections on an outer surface of the fluid transport conduit. The emitted ultraviolet radiation passes through the ultraviolet transparent sections, penetrates the fluid transport conduit and irradiates the internal walls. A control unit adjusts a set of operating parameters of the ultraviolet radiation sources as a function of the removal of contaminants from the internal walls of the fluid transport conduit.Type: ApplicationFiled: March 28, 2017Publication date: October 5, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur
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Patent number: 9768349Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.Type: GrantFiled: August 8, 2016Date of Patent: September 19, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Alexander Dobrinsky
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Patent number: 9768357Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.Type: GrantFiled: February 12, 2016Date of Patent: September 19, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Remigijus Gaska, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Michael Shur, Grigory Simin
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Publication number: 20170263805Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.Type: ApplicationFiled: May 8, 2017Publication date: September 14, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Patent number: 9757486Abstract: A solution for cleaning and/or sterilizing one or more surfaces in a bathroom is provided. The sterilization can be performed using ultraviolet sources, which can emit ultraviolet radiation directed onto the surface(s). The cleaning can be performed using a fluid, such as water, that is flowed over the surface(s). The surface(s) can include at least a seat of a toilet and/or other surfaces associated with the toilet.Type: GrantFiled: November 6, 2015Date of Patent: September 12, 2017Assignee: SENSOR ELECTRONIC TECHNOLOGY, INC.Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Publication number: 20170256672Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.Type: ApplicationFiled: May 23, 2017Publication date: September 7, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Publication number: 20170256623Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.Type: ApplicationFiled: May 22, 2017Publication date: September 7, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Mikhail Gaevski, Grigory Simin, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Patent number: 9750830Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a virus destruction operating configuration and a bacteria disinfection operating configuration. Each configuration can include a unique combination of the target wavelength range and target intensity range.Type: GrantFiled: August 28, 2013Date of Patent: September 5, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Maxim Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
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Publication number: 20170245527Abstract: A system for irradiation of grain foods using one or more ultraviolet emitting sources is provided. The system includes an irradiation region in which the grain foods are irradiated by ultraviolet light. The system can include means for moving the grain foods through irradiation region, means for detecting the flow rate of the grain foods moving through irradiation region, and a control system for adjusting power provided to the ultraviolet emitting sources based on the flow rate of the grain foods.Type: ApplicationFiled: February 28, 2017Publication date: August 31, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur
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Publication number: 20170245616Abstract: An ultraviolet razor blade treatment system for providing a cleaning treatment to a shaving razor is disclosed. The ultraviolet razor blade treatment system can include a shaving razor cleaning unit that has at least one ultraviolet radiation source and sensor to clean surfaces of the shaving razor for purposes of disinfection, sterilization, and/or sanitization.Type: ApplicationFiled: February 28, 2017Publication date: August 31, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Emmanuel Lakios, Michael Shur, Alexander Dobrinsky
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Publication number: 20170248744Abstract: A diffusive layer including a laminate of a plurality of transparent films is provided. At least one of the plurality of transparent films includes a plurality of diffusive elements with a concentration that is less than a percolation threshold. The plurality of diffusive elements are optical elements that diffuse light that is impinging on such element. The plurality of diffusive elements can be diffusively reflective, diffusively transmitting or combination of both. The plurality of diffusive elements can include fibers, grains, domains, and/or the like. The at least one film can also include a powder material for improving the diffusive emission of radiation and a plurality of particles that are fluorescent when exposed to radiation.Type: ApplicationFiled: February 28, 2017Publication date: August 31, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur
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Patent number: 9748440Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.Type: GrantFiled: August 1, 2016Date of Patent: August 29, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska, Mikhail Gaevski
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Patent number: 9741899Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.Type: GrantFiled: June 2, 2015Date of Patent: August 22, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Patent number: 9735315Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.Type: GrantFiled: September 15, 2016Date of Patent: August 15, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Daniel Billingsley, Robert M. Kennedy, Wenhong Sun, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Publication number: 20170229610Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).Type: ApplicationFiled: April 24, 2017Publication date: August 10, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Remigijus Gaska, Jinwei Yang, Michael Shur, Alexander Dobrinsky
