Patents by Inventor Alexander Dribinsky
Alexander Dribinsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11901459Abstract: A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: GrantFiled: December 13, 2021Date of Patent: February 13, 2024Assignee: pSemi CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae-Youn Kim
-
Publication number: 20240007098Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch includes switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. The charge injection control elements include resistors or transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.Type: ApplicationFiled: June 29, 2023Publication date: January 4, 2024Inventors: Alexander Dribinsky, Tae Youn Kim, Dylan J. Kelly, Christopher N. Brindle
-
Patent number: 11695407Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.Type: GrantFiled: December 6, 2021Date of Patent: July 4, 2023Assignee: pSemi CorporationInventors: Alexander Dribinsky, Tae Youn Kim, Dylan J. Kelly, Christopher N. Brindle
-
Publication number: 20220181497Abstract: A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: ApplicationFiled: December 13, 2021Publication date: June 9, 2022Inventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae-Youn Kim
-
Publication number: 20220173731Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.Type: ApplicationFiled: December 6, 2021Publication date: June 2, 2022Inventors: Alexander Dribinsky, Tae Youn Kim, Dylan J. Kelly, Christopher N. Brindle
-
Patent number: 11293938Abstract: Thermal convection based accelerometers and heating control methods therefor are described. The heating control method includes: sensing a temperature in the enclosed cavity and generating a temperature voltage signal; amplifying the temperature voltage signal to obtain an amplified temperature voltage signal; calculating a voltage difference between the amplified temperature voltage signal and a reference voltage signal; converting the voltage difference into a digital sequence by using a modulator; obtaining a heating power adjustment factor representing the voltage difference based on the digital sequence; obtaining a heating power control parameter based on the heating power adjustment factor and an initial heating power factor; converting the heating power control parameter into a switch control signal; and turning on or off a heating control switch coupling with a heating resistor for heating the enclosed cavity in series according to the switch control signal.Type: GrantFiled: October 27, 2020Date of Patent: April 5, 2022Assignee: MEMSIC Semiconductor (TIANJIN) CO., LTD.Inventors: Hongzhi Sun, Alexander Dribinsky
-
Patent number: 11201245Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: GrantFiled: January 9, 2020Date of Patent: December 14, 2021Assignee: pSemi CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae-Youn Kim
-
Patent number: 11196414Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.Type: GrantFiled: July 6, 2020Date of Patent: December 7, 2021Assignee: pSemi CorporationInventors: Alexander Dribinsky, Tae Youn Kim, Dylan J. Kelly, Christopher N. Brindle
-
Publication number: 20210152170Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.Type: ApplicationFiled: July 6, 2020Publication date: May 20, 2021Inventors: Alexander Dribinsky, Tae Youn Kim, Dylan J. Kelly, Christopher N. Brindle
-
Publication number: 20210123942Abstract: The present invention discloses a thermal convection based accelerometer and a heating control method therefor. The heating control method includes: sensing a temperature in the enclosed cavity and generating a temperature voltage signal; amplifying the temperature voltage signal to obtain an amplified temperature voltage signal; calculating a voltage difference between the amplified temperature voltage signal and a reference voltage signal; converting the voltage difference into a digital sequence by using a modulator; obtaining a heating power adjustment factor representing the voltage difference based on the digital sequence; obtaining a heating power control parameter based on the heating power adjustment factor and an initial heating power factor; converting the heating power control parameter into a switch control signal; and turning on or off a heating control switch coupling with a heating resistor for heating the enclosed cavity in series according to the switch control signal.Type: ApplicationFiled: October 27, 2020Publication date: April 29, 2021Applicant: MEMSIC Semiconductor (TIANJIN) Co., Ltd.Inventors: Hongzhi Sun, Alexander Dribinsky
-
Patent number: 10914792Abstract: A linearity compensation circuit is disclosed for improving the linearity of a sensing signal. The linearity compensation circuit may include a compensator that is capable of receiving a sensing signal from a sensor and generating a compensation signal based on the sensing signal. The linearity compensation circuit may also include an output circuit that is capable of combining the compensation signal and the sensing signal to generate a compensated signal that exhibits an improved linearity. Also disclosed is a sensing apparatus which includes a sensor and the linearity compensation circuit. The sensing apparatus may thus be able to generate a sensing signal that is linear over a wider dynamic range.Type: GrantFiled: April 21, 2018Date of Patent: February 9, 2021Assignee: ACEINNA TRANSDUCER SYSTEMS CO., LTD.Inventors: Leyue Jiang, Alexander Dribinsky, Bin Liu, Weize Xu
-
Publication number: 20210035735Abstract: The present invention relates to a coil and a manufacturing method thereof. The method includes: depositing a first metal layer on a first surface of a wafer and patterning the first metal layer to obtain a first patterned metal layer on the first surface; etching a plurality of through holes on a second surface of the wafer to the first surface of the wafer, and depositing a second metal layer on the second surface of the etched wafer and patterning the second metal layer to obtain a plurality of through hole metals and a second patterned metal layer on the second surface; and, dicing the wafer to obtain a plurality of independent coils. Each coil comprises the first patterned metal layer, the through hole metals and the second patterned metal layer. The first patterned metal layer is coupled with the second patterned metal layer through the through hole metals. Thus, high-precision coils can be efficiently manufactured in batches and at low costs through a wafer level process.Type: ApplicationFiled: July 22, 2020Publication date: February 4, 2021Applicant: ACEINNA Transducer Systems Co., Ltd.Inventors: Leyue Jiang, Dalai Li, Alexander Dribinsky
-
Patent number: 10818796Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: GrantFiled: January 30, 2017Date of Patent: October 27, 2020Assignee: pSemi CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae Youn Kim
-
Publication number: 20200335633Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: ApplicationFiled: January 9, 2020Publication date: October 22, 2020Inventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae-Youn Kim
-
Patent number: 10804892Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.Type: GrantFiled: November 29, 2017Date of Patent: October 13, 2020Assignee: pSemi CorporationInventors: Alexander Dribinsky, Tae Youn Kim, Dylan J. Kelly, Christopher N. Brindle
-
Publication number: 20180372810Abstract: A method involves a first magnetic sensor of a magnetic apparatus measuring an external magnetic field. The method also involves a signal processing circuit of the apparatus performing calibration using a second sensor in response to the external magnetic field. The first sensor and the second sensor are formed on the same substrate. There will be at least one magnetic sensor is used to measure the external magnetic field, and the other magnetic sensor is used in calibration, and therefore, the method ensures an effective output signal can be generated during calibration and enhances the accuracy of the measurement.Type: ApplicationFiled: June 20, 2018Publication date: December 27, 2018Inventors: Leyue Jiang, Yang Zhao, Alexander Dribinsky, Akhil Garlapati, Dalai Li, Zhengwei Huang
-
Publication number: 20180306871Abstract: A linearity compensation circuit is disclosed for improving the linearity of a sensing signal. The linearity compensation circuit may include a compensator that is capable of receiving a sensing signal from a sensor and generating a compensation signal based on the sensing signal. The linearity compensation circuit may also include an output circuit that is capable of combining the compensation signal and the sensing signal to generate a compensated signal that exhibits an improved linearity. Also disclosed is a sensing apparatus which includes a sensor and the linearity compensation circuit. The sensing apparatus may thus be able to generate a sensing signal that is linear over a wider dynamic range.Type: ApplicationFiled: April 21, 2018Publication date: October 25, 2018Inventors: Leyue Jiang, Alexander Dribinsky, Bin Liu, Weize Xu
-
Publication number: 20180212599Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.Type: ApplicationFiled: November 29, 2017Publication date: July 26, 2018Inventors: Alexander Dribinsky, Tae Youn Kim, Dylan J. Kelly, Christopher N. Brindle
-
Patent number: 9887695Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.Type: GrantFiled: January 4, 2016Date of Patent: February 6, 2018Assignee: Peregrine Semiconductor CorporationInventors: Alexander Dribinsky, Tae Youn Kim, Dylan J. Kelly, Christopher N. Brindle
-
Patent number: RE48965Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: GrantFiled: December 11, 2019Date of Patent: March 8, 2022Assignee: pSemi CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae Youn Kim