Abstract: The present technology includes systems and methods for invasively adjusting implantable devices for selectively controlling fluid flow between a first body region and a second body region of a patient. For example, in many of the embodiments described herein, a catheter can be used to mechanically and/or electrically engage an implanted medical device. Once the catheter engages the medical device, the catheter can (i) increase a dimension associated with the medical device, such as through mechanical expansion forces, and/or (ii) decrease a dimension associated with the medical device, such as by heating a shape memory component of the medical device above a phase transition temperature.

Abstract: Apparatuses, systems, and techniques to perform collision-free motion generation (e.g., to operate a real-world or virtual robot). In at least one embodiment, at least a portion of the collision-free motion generation is performed in parallel.

Abstract: One embodiment of a method for generating representations of scenes includes assigning each image included in a set of images of a scene to one or more clusters of images based on a camera pose associated with the image, and performing one or more operations to generate, for each cluster included in the one or more clusters, a corresponding three-dimensional (3D) representation of the scene based on one or more images assigned to the cluster.

Abstract: Systems and techniques are described related to training one or more machine learning models for use in control of a robot. In at least one embodiment, one or more machine learning models are trained based at least on simulations of the robot and renderings of such simulations—which may be performed using one or more ray tracing algorithms, operations, or techniques.

Abstract: An automated sandbox generator for a cyber-attack exercise on a mimic network in a cloud environment can include various components. The cloud deployment component deploys the mimic network in a sandbox environment in the cloud environment. The mimic network can be a clone of components from a network that exists in an organization's environment and/or, predefined example components. The attack engine deploys a cyber threat to use an exploit for the wargaming cyber-attack exercise in the mimic network. The user interface displays, in real time, results of the wargaming cyber-attack exercise being conducted in the sandbox environment, to create a behavioral profile of how the cyber threat using the exploit would actually perform in that particular organization's environment as well as have human users interact with the cyber threat deployed by the attack engine during the cyber-attack on the mimic network, as it happens in real time, during the wargaming cyber-attack exercise.

Abstract: A device linking service can unify data streams from different sources of access into a network to get a composite picture of a behavior of an individual physical network device that has different device identifiers from the different sources of access into the network via cross-referencing information from the different sources of access into the network. The device linking service creates a unified network device identifier for the different device identifiers from the different sources of access into the network. The device linking service supplies the unified network device identifier and associated information with the different device identifiers from the different sources of access into the network to a prediction engine. The prediction engine runs a simulation of attack paths for the network that a cyber threat may take.

Abstract: The present disclosure relates to a method for identifying a user interface. Flow data associated with air flowing in a respiratory therapy system is received. Acoustic data associated with the respiratory therapy system is received. The received flow data and the received acoustic data are analyzed. Based at least in part on the analysis, a mask type for the user interface is determined.

Abstract: The present disclosure relates to a method for identifying a user interface. Flow data associated with air flowing in a respiratory therapy system is received. Acoustic data associated with the respiratory therapy system is received. The received flow data and the received acoustic data are analyzed. Based at least in part on the analysis, a mask type for the user interface is determined.

Abstract: A method of producing a semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, the portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connect

Abstract: A method of producing a semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, the portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connect

Abstract: A semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, said portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connection region, wherein t

Abstract: A semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, said portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connection region, wherein t

Abstract: The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of the semiconductor substrate (2) and a second substantially polycrystalline and highly doped region (3) of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer (4) which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.

Abstract: The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of the semiconductor substrate (2) and a second substantially polycrystalline and highly doped region (3) of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer (4) which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.