Abstract: A solar cell array is made of a plurality of bifacial PERC solar cells, respectively formed in a semiconductor body, which are electrically interconnected by way of cell connectors. A structured passivation layer is applied on the rear-side surface of the semiconductor body, on which the current collecting rails and contact finger contacting the semiconductor body are provided. A respective cell connector extends at least partially along a longitudinal direction of at least one current collecting rail and electrically contacts this on at least one solder contact via a solder joint. A lateral width of a current collecting rail is at least partially greater than a lateral width of the cell connector covering this current collecting rail.

Abstract: The invention relates to a method for examining a wire-sawn silicon substrate for a solar cell. The method includes irradiating the silicon substrate with an infrared radiation, detecting the infrared radiation transmitted through the silicon substrate, and analyzing the detected infrared radiation for characterizing the crystal orientation of the silicon substrate. The invention in addition relates to a device for carrying out such a method, and a method for manufacturing a solar cell.

Abstract: A photovoltaic module has a number of solar cells, which respectively include a contact structure on a pre-processed silicon wafer, which has a number of linear contact fingers disposed in parallel in a first direction and at least one bus bar disposed perpendicular to the first direction. The bus bar extends over the contact finger in a second direction and has a respective contact surface in the region of the contact finger, which protrudes above the contact finger in the second direction and is electrically connected to the contact fingers. At least one cell connector is provided for connecting the solar cells, which extends over the bus bar of at least one solar cell and is electrically connected to the contact surfaces of the bus bar, wherein the width of the cell connector is smaller than the length of the contact surface in the first direction.

Abstract: The invention relates to a method for examining a wire-sawn silicon substrate for a solar cell. The method includes irradiating the silicon substrate with an infrared radiation, detecting the infrared radiation transmitted through the silicon substrate, and analyzing the detected infrared radiation for characterizing the crystal orientation of the silicon substrate. The invention in addition relates to a device for carrying out such a method, and a method for manufacturing a solar cell.

Abstract: A semiconductor component, especially a solar cell comprises a semiconductor substrate of a planar design having a first side and a second side lying opposite thereto, at least one contact structure arranged on at least one side of the semiconductor substrate, the at least one contact structure exhibiting a diffusion barrier to prevent the diffusion of ions from the contact structure into the semiconductor substrate.

Abstract: A method for producing a semiconductor component with an easily solderable contact structure comprising the provision of a semiconductor substrate of a planar design with a first side, a second side, a surface normal standing vertically thereon, a dielectric passivation layer arranged on at least one of the sides and a first contact layer arranged on passivation layer, the application, at least in some areas, of at least one second contact layer onto the first contact layer, the at least one second contact layer comprising at least a partial layer made of an easily solderable metal, especially of nickel and/or silver and/or tin and/or a compound thereof, and the making of an electrically conductive contact between the second contact layer and the semiconductor substrate.

Abstract: A semiconductor component, especially a solar cell comprises a semiconductor substrate of a planar design having a first side and a second side lying opposite thereto, at least one contact structure arranged on at least one side of the semiconductor substrate, the at least one contact structure exhibiting a diffusion barrier to prevent the diffusion of ions from the contact structure into the semiconductor substrate.