Patents by Inventor Alexander Grekov

Alexander Grekov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS-driver compatible JFET structure with enhanced gate source characteristics
    Patent number: 8264058
    Abstract: A MOSFET driver compatible JFET device is disclosed. The JFET device can include a gate contact, a drain contact, and a source contact. The JFET device can further include a first gate region of semiconductor material adjacent the gate contact and a second region of semiconductor material adjacent the first gate region. The first gate region and the second gate region can form a first p-n junction between the first gate region and the second gate region. The JFET device can further include a channel region of semiconductor material adjacent the source contact. The channel region and the second gate region can form a second p-n junction between the second gate region and the channel region.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: September 11, 2012
    Assignee: University of South Carolina
    Inventors: Enrico Santi, Zhiyang Chen, Alexander Grekov
  • MOS-Driver Compatible JFET Structure with Enhanced Gate Source Characteristics
    Publication number: 20100207126
    Abstract: A MOSFET driver compatible JFET device is disclosed. The JFET device can include a gate contact, a drain contact, and a source contact. The JFET device can further include a first gate region of semiconductor material adjacent the gate contact and a second region of semiconductor material adjacent the first gate region. The first gate region and the second gate region can form a first p-n junction between the first gate region and the second gate region. The JFET device can further include a channel region of semiconductor material adjacent the source contact. The channel region and the second gate region can form a second p-n junction between the second gate region and the channel region.
    Type: Application
    Filed: February 12, 2010
    Publication date: August 19, 2010
    Applicant: UNIVERSITY OF SOUTH CAROLINA
    Inventors: Enrico Santi, Zhiyang Chen, Alexander Grekov