Patents by Inventor Alexander Gurary

Alexander Gurary has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140261187
    Abstract: A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Inventors: Sandeep Krishnan, Wiliam E. Quinn, Jeffery S. Montgomery, Joshua Mangum, Lukas Urban, Alexander Gurary
  • Publication number: 20120272892
    Abstract: A VPE reactor is improved by providing temperature control to within 0.5° C., and greater process gas uniformity via novel reactor shaping, unique wafer motion structures, improvements in thermal control systems, improvements in gas flow structures, improved methods for application of gas and temperature, and improved control systems for detecting and reducing process variation.
    Type: Application
    Filed: April 6, 2012
    Publication date: November 1, 2012
    Applicant: Veeco Instruments Inc.
    Inventors: Ajit Paranjpe, Alexander Gurary, William Quinn
  • Publication number: 20120058630
    Abstract: A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers.
    Type: Application
    Filed: September 8, 2010
    Publication date: March 8, 2012
    Applicant: Veeco Instruments Inc.
    Inventors: William E. Quinn, Alexander Gurary, Ajit Paranjpe, Maria D. Ferreira, Roger P. Fremgen, JR., Eric A. Armour
  • Patent number: 7666323
    Abstract: A system and method is disclosed for increasing the emissivity of solid materials, wherein first the surface of the material is mechanically worked to create micro-level defects, and then etched to create a deep micro-rough surface morphology. In this manner, higher efficiencies and lower energy consumption can be obtained when these modified materials are used for heating elements. Heating elements made in accordance with this process thus operate at lower temperatures with longer lifetimes, when the improved heating elements are used with various heating devices.
    Type: Grant
    Filed: August 18, 2004
    Date of Patent: February 23, 2010
    Assignee: Veeco Instruments Inc.
    Inventors: Vadim Boguslavskiy, Alexander Gurary
  • Publication number: 20070291816
    Abstract: A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
    Type: Application
    Filed: August 21, 2007
    Publication date: December 20, 2007
    Applicant: Veeco Instruments Inc.
    Inventors: Boris Volf, Mikhail Belousov, Alexander Gurary
  • Patent number: 7275861
    Abstract: A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: October 2, 2007
    Assignee: Veeco Instruments Inc.
    Inventors: Boris Volf, Mikhail Belousov, Alexander Gurary
  • Publication number: 20060171442
    Abstract: A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
    Type: Application
    Filed: January 31, 2005
    Publication date: August 3, 2006
    Applicant: Veeco Instruments Inc.
    Inventors: Boris Volf, Mikhail Belousov, Alexander Gurary
  • Publication number: 20050274374
    Abstract: A system and method is disclosed for increasing the emissivity of solid materials, wherein first the surface of the material is mechanically worked to create micro-level defects, and then etched to create a deep micro-rough surface morphology. In this manner, higher efficiencies and lower energy consumption can be obtained when these modified materials are used for heating elements. Heating elements made in accordance with this process thus operate at lower temperatures with longer lifetimes, when the improved heating elements are used with various heating devices.
    Type: Application
    Filed: August 18, 2004
    Publication date: December 15, 2005
    Applicant: Veeco Instruments Inc.
    Inventors: Vadim Boguslavskiy, Alexander Gurary
  • Publication number: 20050217578
    Abstract: A shutter assembly for a reactor includes a cylindrical shutter for selectively closing a passthrough opening of the reactor, the shutter forming a closed loop and including an internal cavity adapted to receive a cooling fluid, tubing connected with the cylindrical shutter for supplying the cooling fluid to the internal cavity, and an actuator connected with the tubing for moving the tubing and the cylindrical shutter. The cylindrical shutter is movable between a first substantially closed position and a second substantially open position.
    Type: Application
    Filed: May 13, 2005
    Publication date: October 6, 2005
    Inventors: Alexander Gurary, Scott Elman, Keng Moy, Vadim Boguslavskiy
  • Patent number: 6902623
    Abstract: A reactor for growing epitaxial layers includes reaction chamber having a passthrough opening for inserting and removing wafer carriers from the reaction chamber. A reactor also includes a cylindrical shutter located inside the reaction chamber for selectively closing the passthrough opening. The cylindrical shutter is movable between a first position for closing the passthrough opening and a second position for opening the passthrough opening. The cylindrical shutter includes an internal cavity adapted to receive a cooling fluid and tubing for introducing the cooling fluid into the internal cavity. The tubing is permanently secured to the shutter and moves simultaneously therewith. The cylindrical shutter and the internal cavity of the shutter surrounds an outer perimeter of the wafer carrier, thereby minimizing nonuniformity in the temperature and flow field characteristics of the reactant gases.
    Type: Grant
    Filed: January 16, 2002
    Date of Patent: June 7, 2005
    Assignee: Veeco Instruments Inc.
    Inventors: Alexander Gurary, Scott Elman, Keng Moy, Vadim Boguslavskiy
  • Patent number: 6726769
    Abstract: The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle without an intermediate susceptor. The reactor of the invention may process a single wafer or a plurality of wafers at the same time. The invention also described several embodiments and variants of the invention. One of the variants of the invention provides a decrease in a heat drain from the wafer-supporting assembly through the spindle and a novel heating arrangement therefore. The advantages of the invention include lower reactor cycle, the lower cost and longer lifetime of the component parts, and better temperature control, among others.
    Type: Grant
    Filed: November 26, 2002
    Date of Patent: April 27, 2004
    Assignee: Emcore Corporation
    Inventors: Vadim Boguslavskiy, Alexander Gurary
  • Patent number: 6685774
    Abstract: A method of growing epitaxial layers on a wafer is provided and includes providing a wafer carrier having a surface for retaining the wafer; placing the wafer on the wafer-retaining surface of the wafer carrier while the wafer carrier is in a loading position separated from a spindle; transporting the wafer carrier toward the spindle; detachably mounting the wafer carrier on the upper end of the spindle for rotation therewith; and rotating the spindle and the wafer carrier while introducing one or more reactants into the reaction chamber. The invention also described several embodiments and variants of the method of the invention.
    Type: Grant
    Filed: October 10, 2002
    Date of Patent: February 3, 2004
    Assignee: Emcore Corporation
    Inventors: Vadim Boguslavskiy, Alexander Gurary
  • Publication number: 20030111009
    Abstract: The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle without an intermediate susceptor. The reactor of the invention may process a single wafer or a plurality of wafers at the same time.
    Type: Application
    Filed: November 26, 2002
    Publication date: June 19, 2003
    Applicant: Emcore Corporation
    Inventors: Vadim Boguslavskiy, Alexander Gurary
  • Patent number: 6547876
    Abstract: The invention describes an apparatus for chemical vapor deposition on substrates, a related method of deposition of epitaxial layers on the wafers and an assemblage for use therewith. In the apparatus of the invention, the wafers are placed directly on the surface of a heating filament. The apparatus of the invention may include a reaction chamber, a rotatable spindle, a plurality of rotatable electrodes mounted on the spindle for rotation together with the spindle and a heating filament in electrical contact with the rotatable electrodes. The heating filament may be rotated by rotating the rotatable electrodes, and heated by providing electric current to the electrodes. In one embodiment of the invention, heating filament may be detached from the rotatable electrodes to load or unload the wafers. Preferably, the heating filament is transported between a deposition position and a loading position. Alternatively, the heating filament is permanently mounted on the electrodes.
    Type: Grant
    Filed: February 7, 2001
    Date of Patent: April 15, 2003
    Assignee: Emcore Corporation
    Inventors: Ian Ferguson, Alexander Gurary, Michael Spencer
  • Publication number: 20030047132
    Abstract: A method of growing epitaxial layers on a wafer is provided and includes providing a wafer carrier having a surface for retaining the wafer; placing the wafer on the wafer-retaining surface of the wafer carrier while the wafer carrier is in a loading position separated from a spindle; transporting the wafer carrier toward the spindle; detachably mounting the wafer carrier on the upper end of the spindle for rotation therewith; and rotating the spindle and the wafer carrier while introducing one or more reactants into the reaction chamber. The invention also described several embodiments and variants of the method of the invention.
    Type: Application
    Filed: October 10, 2002
    Publication date: March 13, 2003
    Applicant: Emcore Corporation
    Inventors: Vadim Boguslavskiy, Alexander Gurary
  • Patent number: 6506252
    Abstract: The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle without an intermediate susceptor. The reactor of the invention may process a single wafer at the same time. The invention also describes several embodiments and variants of the invention. One of the variants of the invention provides a decrease in a heat drain from the wafer-supporting assembly through the spindle and a novel heating arrangement therefore. The advantages of the invention include lower reactor cycle, the lower cost and longer lifetime of the component parts, and better temperature control, among others.
    Type: Grant
    Filed: February 7, 2001
    Date of Patent: January 14, 2003
    Assignee: Emcore Corporation
    Inventors: Vadim Boguslavskiy, Alexander Gurary
  • Publication number: 20020185068
    Abstract: A reactor for growing epitaxial layers includes a reaction chamber having a passthrough opening for inserting and removing wafer carriers from the reaction chamber. A reactor also includes a cylindrical shutter located inside the reaction chamber for selectively closing the passthrough opening. The cylindrical shutter is movable between a first position for closing the passthrough opening and a second position for opening the passthrough opening. The cylindrical shutter includes an internal cavity adapted to receive a cooling fluid and tubing for introducing the cooling fluid into the internal cavity. The tubing is permanently secured to the shutter and moves simultaneously therewith. The cylindrical shutter substantially surrounds an outer perimeter of the wafer carrier, thereby minimizing nonuniformity in the temperature and flow field characteristics of the reactant gases.
    Type: Application
    Filed: January 16, 2002
    Publication date: December 12, 2002
    Inventors: Alexander Gurary, Scott Elman, Keng Moy, Vadim Boguslavskiy
  • Patent number: 6492625
    Abstract: An apparatus and method for providing substantially uniform substrate temperature in a chemical vapor deposition reaction chamber is provided. The method and apparatus utilize a carrier for holding at least one substrate in the reaction chamber and a plurality of heating elements arranged to heat the carrier and the at least one substrate. At least one substrate pyrometer measures the temperature of the substrates to provide a signal representing the process temperature. This signal is used in a feedback loop to control one or more of the heating elements. At least two carrier pyrometers focused at different zones of the carrier are provided. The signals from the carrier pyrometers are compared to one another to provide an indication of temperature non-uniformity. This indication is used in a separate feedback loop to adjust other heating elements so as to maintain temperature uniformity across the carrier.
    Type: Grant
    Filed: September 27, 2000
    Date of Patent: December 10, 2002
    Assignee: Emcore Corporation
    Inventors: Vadim Boguslavskiy, Alexander Gurary, Ameesh Patel, Jeffrey Ramer
  • Publication number: 20020104476
    Abstract: The invention describes an apparatus for chemical vapor deposition on substrates, a related method of deposition of epitaxial layers on the wafers and an assemblage for use therewith. In the apparatus of the invention, the wafers are placed directly on the surface of a heating filament.
    Type: Application
    Filed: February 7, 2001
    Publication date: August 8, 2002
    Inventors: Ian Ferguson, Alexander Gurary, Michael Spencer
  • Publication number: 20020106826
    Abstract: The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle without an intermediate susceptor. The reactor of the invention may process a single wafer or a plurality of wafers at the same time.
    Type: Application
    Filed: February 7, 2001
    Publication date: August 8, 2002
    Inventors: Vadim Boguslavskiy, Alexander Gurary