Abstract: GaAs films compensated with TEOV to reduce free electron concentration are grown having superior morphology by heating the TEOV above the temperature used in the prior art, filtering the other constituents but not the TEOV, and reducing the arsenic ambient during the preliminary heating phase.

Abstract: A method of passivating a gallium arsenide surface includes the steps of implanting a subsurface layer of nitrogen ions and annealing and reactive the nitrogen to form a layer consisting primarily of gallium nitride.

Abstract: Semiconductor thin films are produced using plasma assisted chemical vapor deposition on alkali halide single crystal substrates. Deposition is formed at relatively low temperatures so that sublimation of the substrate is not a problem. The invention process permits at high rate deposition of high quality semiconductors.

Abstract: A radio frequency, plasma-enhanced, vapor deposition reactor has apparatus (3-7) for providing a flow of silane in an inert gas carrier, a deposition chamber (20) formed between a pair of flow restrictors (18, 27) and an RF coil (22) for providing inductive coupling of RF power (24) for plasma excitation, disposed downstream of a fixture (8) for holding the substrate upon which amorphous silicon is to be disposed. A baffle (30) provides diversion of the gas flow toward a gravity trap chamber (31), thereby collecting some particulates and prolonging the cycle time before plugging of the vacuum pump (7) can occur.

Abstract: A semiconductor article having a phosphorous nitrogen passivating film thereon. Particularly, an insulated gate field effect transistor device operating in the inversion mode, wherein the device comprises an essentially oxygen-free, amorphous, phosphorous-nitrogen glass passivating film deposited on a III-V semiconductor material.

Abstract: A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Abstract: Low cost, easily reproducible piezoelectric deflector (8) operable with low voltages is achieved by providing an interdigital electrode configuration (12, 13) on a surface of piezoelectric material (10) having alternate sites (15, 16) with different piezoelectric response. A preferred embodiment polarizes the sites oppositely in a piezoelectric ceramic substrate (10). Alternate sites in piezoelectric crystals may be removed or have their piezoelectricity substantially reduced. Differential devices (8a, 8b) employ electrodes on both surfaces of the substrate, with a site at one surface being poled oppositely to an adjacent site at the other surface (FIG. 3) or with adjacent sites at both surfaces poled alike, and signal voltages applied oppositely (FIG. 4).

Abstract: Type III-V compound semiconductor surfaces are passivated by exposure to a low pressure nitrogen plasma. The III element forms III element-nitride. Nitridation is performed in two steps; the first being at a low temperature to prevent decomposition of the surface by loss of V element, and the second step being performed at an elevated temperature at which nitridation proceeds at a faster rate. The resultant articles have a III element-nitride surface layer which protects the articles from environmental degradation while reducing the surface state density and permitting inversion of the surface layer.

Abstract: A method of applying an intermediate bond coat on a laser mirror substrate is described comprising surface polishing the mirror substrate followed by depositing a layer of amorphous silicon, amorphous germanium, or mixtures thereof on the mirror surface, and polishing the thus coated mirror surface to a substantially void-free surface finish. Laser mirror substrates such as graphite fiber reinforced glass, molybdenum and silicon carbide coated by such process are also described.

Abstract: A method for the chemical vapor deposition of amorphous, glass-like, phosphorous-nitrogen based films on the surface of a substrate is disclosed. The process entails exposing the substrate to a reactant gas stream comprising phosphorous, nitrogen and hydrogen. This method is particularly suited for passivating Group III-V semiconductor materials.

Abstract: Semiconductor thin films are produced using plasma assisted chemical vapor deposition on alkali halide single crystal substrates. Deposition is formed at relatively low temperatures so that sublimation of the substrate is not a problem. The invention process permits at high rate deposition of high quality semiconductors.

Abstract: A method of repairing an intermediate amorphous silicon and/or germanium bond coat on a laser mirror substrate is described. The initial coating is put down by polishing the mirror substrate followed by depositing a layer of amorphous silicon, amorphous germanium, or mixtures thereof on the mirror surface, and polishing the thus coated mirror surface to a substantially void-free surface finish. A layer of oxide of silicon or germanium is deposited on the thus formed coating either during, after, or in sandwich fashion during the formation of such intermediate bond coat. The intermediate coating can be surface polished back to the original amorphous layer or the oxide can remain on the surface after polishing.