Patents by Inventor Alexander Kadyshevitch
Alexander Kadyshevitch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11823883Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.Type: GrantFiled: November 19, 2021Date of Patent: November 21, 2023Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Christopher F. Bevis, Yungman Alan Liu, David Allen Reed, Eli Cheifetz, Amit Weingarten, Alexander Kadyshevitch
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Patent number: 11656371Abstract: An ion detection system for detecting incident ions including an ion-to-electron converter for converting incident ions to secondary electrons, an accelerating assembly including at least one of an electric field and a magnetic field for acceleration and transfer of the secondary electrons to a scintillator, the scintillator for converting the accelerated secondary electrons to an initial flux of photons, a photon channeling assembly including a first photon channel and a second photon channel, wherein the photon channeling assembly is configured for separating the initial flux of photons into at least a first photon flux channeled into the first photon channel and a second photon flux channeled into the second photon channel, and at least one photodetector for detecting at least one of a first optical signal generated at the first photon channel, and a second optical signal generated at the second photon channel.Type: GrantFiled: June 9, 2021Date of Patent: May 23, 2023Assignee: El-Mul Technologies LtdInventors: Jonathan Garel, Amit Weingarten, Semyon Shofman, Alexander Kadyshevitch
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Patent number: 11587776Abstract: An ion detection system comprising an upper plate configured for propagation of ions therethrough, a lower plate comprising a converter configured for converting ions impinging thereon to secondary electrons, a secondary electron multiplication assembly configured for receiving the secondary electrons and comprising at least one or optionally a series of oppositely facing pairs of dynodes, wherein in the optional series of oppositely facing pairs of dynodes, each pair is spaced apart from an adjacent pair, and wherein a first electric field is created in between the oppositely facing pair of dynodes. A magnetic system is provided for generating a magnetic field.Type: GrantFiled: June 1, 2020Date of Patent: February 21, 2023Assignee: El-Mul Technologies LTDInventors: Semyon Shofman, Alexander Kadyshevitch
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Patent number: 11536604Abstract: An in-vacuum light sensor system, including a light sensor assembly comprising a photocathode configured for converting an impinging photon to a photoelectron, a semiconductor diode configured for multiplying the photoelectron impinging thereon, and a housing including vacuum-compatible materials configured for being placed in a vacuum chamber. The housing is configured for housing the photocathode and the semiconductor diode and for propagation of the photoelectron from the photocathode to the semiconductor diode. An electrical biasing subassembly is configured for electrically biasing at least the photocathode and the semiconductor diode, and the vacuum chamber is configured for positioning the light sensor apparatus therein.Type: GrantFiled: June 1, 2020Date of Patent: December 27, 2022Assignee: EL-MUL TECHNOLOGIES LTDInventors: Jonathan Garel, Amit Weingarten, Semyon Shofman, Alexander Kadyshevitch
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Patent number: 11493383Abstract: A magnetic photomultiplier tube (PMT) system, including a PMT. The PMT including a photocathode for converting an impinging photon to a photoelectron, an anode, and at least two or a series of oppositely facing pairs of dynodes, wherein each pair is spaced apart from an adjacent pair, a first electric field being generated intermediate at least one pair of oppositely facing dynodes and a second electric field generated intermediate at least one adjacent pairs of dynodes. The PMT system includes a magnetic field generated by a magnetic system, the PMT being positioned within the magnetic field.Type: GrantFiled: February 16, 2020Date of Patent: November 8, 2022Assignee: .EL-MUL TECHNOLOGIES LTDInventors: Semyon Shofman, Alexander Kadyshevitch
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Publication number: 20220223395Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.Type: ApplicationFiled: November 19, 2021Publication date: July 14, 2022Inventors: Christopher F. BEVIS, Yungman Alan LIU, David Allen REED, Eli CHEIFETZ, Amit WEINGARTEN, Alexander KADYSHEVITCH
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Patent number: 11183377Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.Type: GrantFiled: May 12, 2017Date of Patent: November 23, 2021Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Christopher F. Bevis, Yungman Alan Liu, David Allen Reed, Eli Cheifetz, Amit Weingarten, Alexander Kadyshevitch
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Publication number: 20200264042Abstract: A magnetic photomultiplier tube (PMT) system, comprising a PMT. The PMT comprising a photocathode for converting an impinging photon to a photoelectron, an anode, and at least two or a series of oppositely facing pairs of dynodes, wherein each pair is spaced apart from an adjacent pair, a first electric field being generated intermediate at least one pair of oppositely facing dynodes and a second electric field generated intermediate at least one adjacent pairs of dynodes. The PMT system comprises a magnetic field generated by a magnetic system, the PMT being positioned within the magnetic field.Type: ApplicationFiled: February 16, 2020Publication date: August 20, 2020Inventors: Semyon SHOFMAN, Alexander KADYSHEVITCH
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Publication number: 20200066502Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.Type: ApplicationFiled: May 12, 2017Publication date: February 27, 2020Inventors: Christopher F. BEVIS, Yungman Alan LIU, David Allen REED, Eli CHEIFETZ, Amit WEINGARTEN, Alexander KADYSHEVITCH
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Patent number: 9523714Abstract: A non-mechanical contact signal measurement apparatus includes a first conductor on a structure under test and a gas in contact with the first conductor. At least one electron beam is directed into the gas so as to induce a plasma in the gas where the electron beam passes through the gas. A second conductor is in electrical contact with the plasma. A signal source is coupled to an electrical measurement device through the first conductor, the plasma, and the second conductor when the plasma is directed on the first conductor. The electrical measurement device is responsive to the signal source.Type: GrantFiled: January 15, 2014Date of Patent: December 20, 2016Assignees: PHOTON DYNAMICS, INC., ORBOTECH LTD.Inventors: Alexander Kadyshevitch, Ofer Kadar, Arie Glazer, Ronen Loewinger, Abraham Gross, Daniel Toet
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Publication number: 20140132299Abstract: A non-mechanical contact signal measurement apparatus includes a first conductor on a structure under test and a gas in contact with the first conductor. At least one electron beam is directed into the gas so as to induce a plasma in the gas where the electron beam passes through the gas. A second conductor is in electrical contact with the plasma. A signal source is coupled to an electrical measurement device through the first conductor, the plasma, and the second conductor when the plasma is directed on the first conductor. The electrical measurement device is responsive to the signal source.Type: ApplicationFiled: January 15, 2014Publication date: May 15, 2014Applicant: Photon Dynamics, Inc.Inventors: Alexander Kadyshevitch, Ofer Kadar, Arie Glazer, Ronen Loewinger, Abraham Gross, Daniel Toet
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Patent number: 7842933Abstract: A system and method for detecting overlay errors, the method includes (i) directing a primary electron beam to interact with an inspected object; whereas the inspected object comprises a first feature formed on a first layer of the inspected object and a second feature formed on a second layer of the object, wherein the second feature is buried under the first layer and wherein the second feature affects a shape of an area of the first layer; (ii) detecting electrons reflected or scattered from the area of the first layer; and (iii) receiving detection signals from at least one detector and determining overlay errors.Type: GrantFiled: October 22, 2003Date of Patent: November 30, 2010Assignee: Applied Materials Israel, Ltd.Inventors: Dimitry Shur, Alexander Kadyshevitch
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Patent number: 7602197Abstract: A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.Type: GrantFiled: June 7, 2004Date of Patent: October 13, 2009Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Dmitry Shur, Christopher Talbot
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Patent number: 7476875Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.Type: GrantFiled: July 17, 2007Date of Patent: January 13, 2009Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Chris Talbot, Dmitry Shur, Andreas G. Hegedus
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Patent number: 7473911Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.Type: GrantFiled: October 27, 2003Date of Patent: January 6, 2009Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Dror Shemesh, Yaniv Brami, Dmitry Shur
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Patent number: 7381978Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.Type: GrantFiled: February 3, 2005Date of Patent: June 3, 2008Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Chris Talbot, Dmitry Shur, Andreas G. Hegedus
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Publication number: 20070257191Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.Type: ApplicationFiled: July 17, 2007Publication date: November 8, 2007Inventors: Alexander Kadyshevitch, Christopher Talbot, Dmitry Shur, Andreas Hegedus
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Patent number: 7279689Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.Type: GrantFiled: July 13, 2005Date of Patent: October 9, 2007Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Chris Talbot, Dmitry Shur, Andreas G. Hegedus
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Publication number: 20070057687Abstract: A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.Type: ApplicationFiled: June 7, 2004Publication date: March 15, 2007Inventors: Alexander Kadyshevitch, Dmitry Shur, Christopher Talbot
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Patent number: 7170056Abstract: A method for measuring leakage through a dielectric layer of a semiconductor device on a wafer, including irradiating the dielectric layer with a charged particle beam having a beam current. The irradiation generates a wafer current having a relation to the beam current in a selected range of the beam current. The method further includes determining a boundary value of the beam current at which the relation is not satisfied, and determining a leakage current through the dielectric layer in response to the boundary value.Type: GrantFiled: December 29, 2004Date of Patent: January 30, 2007Assignee: Applied Materials, Israel, Ltd.Inventors: Dmirty Shur, Alexander Kadyshevitch