Patents by Inventor Alexander Khitun
Alexander Khitun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11243276Abstract: A magnetic field detector and associated methods are shown. One example of a magnetic field detector uses spin wave interference to detect information about an external magnetic field.Type: GrantFiled: September 5, 2019Date of Patent: February 8, 2022Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventor: Alexander Khitun
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Publication number: 20200081079Abstract: A magnetic field detector and associated methods are shown. One example of a magnetic field detector uses spin wave interference to detect information about an external magnetic field.Type: ApplicationFiled: September 5, 2019Publication date: March 12, 2020Inventor: Alexander Khitun
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Publication number: 20180068703Abstract: An electronic device using an array of magnetic wave guides is shown. In one example a memory device is shown that utilizes spin waves and a magnet storage element that interacts with the spin waves. In one example, an electronic device is shown that utilizes both a complementary metal oxide device and a magnonic device coupled together.Type: ApplicationFiled: August 30, 2017Publication date: March 8, 2018Inventor: Alexander Khitun
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Patent number: 9767876Abstract: An electronic device using an array of magnetic wave guides is shown. In one example a memory device is shown that utilizes spin waves and a magnet storage element that interacts with the spin waves. In one example, an electronic device is shown that utilizes both a complementary metal oxide device and a magnonic device coupled together.Type: GrantFiled: October 27, 2015Date of Patent: September 19, 2017Assignee: The Regents of the University of CaliforniaInventor: Alexander Khitun
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Publication number: 20160118099Abstract: An electronic device using an array of magnetic wave guides is shown. In one example a memory device is shown that utilizes spin waves and a magnet storage element that interacts with the spin waves. In one example, an electronic device is shown that utilizes both a complementary metal oxide device and a magnonic device coupled together.Type: ApplicationFiled: October 27, 2015Publication date: April 28, 2016Inventor: Alexander Khitun
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Patent number: 9300251Abstract: A frequency conversion device, which may include a radiofrequency (RF) mixer device, includes a substrate and a ferromagnetic film disposed over a surface of the substrate. An insulator is disposed over the ferromagnetic film and at least one microstrip antenna is disposed over the insulator. The ferromagnetic film provides a non-linear response to the frequency conversion device. The frequency conversion device may be used for signal mixing and amplification. The frequency conversion device may also be used in data encryption applications.Type: GrantFiled: March 14, 2008Date of Patent: March 29, 2016Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Alexander Khitun, Igor V. Roshchin, Kosmas Galatsis, Mingqiang Bao, Kang L. Wang
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Patent number: 9197215Abstract: A dual-gate transistor having a negative differential resistance (NDR) region is disclosed. The dual-gate transistor includes a back-gate, a zero-bandgap graphene layer disposed on the back-gate, a top-gate disposed on a portion of the zero-bandgap graphene layer adjacent to the top-gate, and a drain disposed on a portion of the zero-bandgap graphene layer adjacent to the top-gate and displaced from the source. Also included is a dynamic bias controller configured to simultaneously sweep a source-drain voltage and a top-gate voltage across a Dirac point to provide operation within the NDR region. Operation within the NDR region is employed to realize non-Boolean logic functions. Graphene-based non-Boolean logic circuits are constructed from pluralities of the disclosed dual-gate transistor. Pattern recognition circuitry for operation between 100 GHz and 500 GHz is also disclosed via the graphene-based non-Boolean logic circuits.Type: GrantFiled: May 2, 2014Date of Patent: November 24, 2015Assignee: The Regents of the University of CaliforniaInventors: Alexander A. Balandin, Alexander Khitun, Roger Lake
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Publication number: 20150318856Abstract: A dual-gate transistor having a negative differential resistance (NDR) region is disclosed. The dual-gate transistor includes a back-gate, a zero-bandgap graphene layer disposed on the back-gate, a top-gate disposed on a portion of the zero-bandgap graphene layer adjacent to the top-gate, and a drain disposed on a portion of the zero-bandgap graphene layer adjacent to the top-gate and displaced from the source. Also included is a dynamic bias controller configured to simultaneously sweep a source-drain voltage and a top-gate voltage across a Dirac point to provide operation within the NDR region. Operation within the NDR region is employed to realize non-Boolean logic functions. Graphene-based non-Boolean logic circuits are constructed from pluralities of the disclosed dual-gate transistor. Pattern recognition circuitry for operation between 100 GHz and 500 GHz is also disclosed via the graphene-based non-Boolean logic circuits.Type: ApplicationFiled: May 2, 2014Publication date: November 5, 2015Applicant: The Regents of the University of CaliforniaInventors: Alexander A. Balandin, Alexander Khitun, Roger Lake
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Patent number: 8193598Abstract: Nano-scale and multi-scale computational architectures using spin waves as a physical mechanism for device interconnection are provided. Solid-state spin-wave computing devices using nano-scale and multi-scale computational architectures comprised of a plurality of inputs and a plurality of outputs are described where such devices are configured to simultaneously transmit data elements from the inputs to the outputs by using spin-waves of differing frequencies. These devices include but are not limited to a spin-wave crossbar, a spin-wave reconfigurable mesh, a spin-wave fully-interconnected cluster, a hierarchical multi-scale spin-wave crossbar, a hierarchical multi-scale spin-wave reconfigurable mesh and a hierarchical multi-scale spin-wave fully-interconnected cluster.Type: GrantFiled: November 4, 2008Date of Patent: June 5, 2012Assignee: The Regents of the University of CaliforniaInventors: Mary M. Eshaghian-Wilner, Alexander Khitun, Kang L. Wang
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Patent number: 7535070Abstract: Nano-scale and multi-scale computational architectures using spin waves as a physical mechanism for device interconnection are provided. Solid-state spin-wave computing devices using nano-scale and multi-scale computational architectures comprised of a plurality of inputs and a plurality of outputs are described where such devices are configured to simultaneously transmit data elements from the inputs to the outputs by using spin-waves of differing frequencies. These devices include but are not limited to a spin-wave crossbar, a spin-wave reconfigurable mesh, a spin-wave fully-interconnected cluster, a hierarchical multi-scale spin-wave crossbar, a hierarchical multi-scale spin-wave reconfigurable mesh and a hierarchical multi-scale spin-wave fully-interconnected cluster.Type: GrantFiled: January 30, 2007Date of Patent: May 19, 2009Assignee: The Regents of the University of CaliforniaInventors: Mary M. Eshaghian-Wilner, Alexander Khitun, Kang L. Wang
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Patent number: 7528456Abstract: New kinds of nano-scale computational architectures using spin waves as a physical mechanism for device interconnection are described. A method for operating a logic device having a spin wave bus includes the step of receiving an input signal representing information. A spin wave is excited with the information coded in an aspect of the spin wave in response to receiving the input signal. The spin wave is propagated through a spin wave bus having an associated polarization. The information associated with the spin wave is determined in response to propagating the spin wave through the spin wave bus.Type: GrantFiled: March 1, 2006Date of Patent: May 5, 2009Assignee: The Regents of the University of CaliforniaInventors: Alexander Khitun, Roman P. Ostroumov, Kang L. Wang
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Publication number: 20090096044Abstract: Nano-scale and multi-scale computational architectures using spin waves as a physical mechanism for device interconnection are provided. Solid-state spin-wave computing devices using nano-scale and multi-scale computational architectures comprised of a plurality of inputs and a plurality of outputs are described where such devices are configured to simultaneously transmit data elements from the inputs to the outputs by using spin-waves of differing frequencies. These devices include but are not limited to a spin-wave crossbar, a spin-wave reconfigurable mesh, a spin-wave fully-interconnected cluster, a hierarchical multi-scale spin-wave crossbar, a hierarchical multi-scale spin-wave reconfigurable mesh and a hierarchical multi-scale spin-wave fully-interconnected cluster.Type: ApplicationFiled: November 4, 2008Publication date: April 16, 2009Inventors: Mary M. Eshaghian-Wilner, Alexander Khitun, Kang L. Wang
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Publication number: 20080224740Abstract: A frequency conversion device, which may include a radiofrequency (RF) mixer device, includes a substrate and a ferromagnetic film disposed over a surface of the substrate. An insulator is disposed over the ferromagnetic film and at least one microstrip antenna is disposed over the insulator. The ferromagnetic film provides a non-linear response to the frequency conversion device. The frequency conversion device may be used for signal mixing and amplification. The frequency conversion device may also be used in data encryption applications.Type: ApplicationFiled: March 14, 2008Publication date: September 18, 2008Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Alexander Khitun, Igor V. Roshchin, Kosmas Galatsis, Mingqiang Bao, Kang L. Wang
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Patent number: 7372306Abstract: A method and state stabilizer for enhancing computing functionality by using fast excitations are described. The state stabilizer includes a voltage source for producing fast excitations having an associated excitation amplitude. An electronic device having an associated negative differential resistance region is also included. The excitation amplitude is greater than a width of the negative differential resistance region.Type: GrantFiled: February 14, 2006Date of Patent: May 13, 2008Assignee: The Regents of the University of CaliforniaInventors: Alexander Khitun, Kang L. Wang
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Patent number: 7366011Abstract: A low-power memory device that uses hole-mediated ferromagnetism creates substantial advantages over conventional systems. Some of these advantages include reducing power consumption by several orders of magnitude and facilitating wireless monitoring of memory cells. In one implementation, an electronic device is described that includes a plurality of memory cells. Each of the memory cells has a material with first and second magnetic states. The material is in the first magnetic state when a contact associated with the material is at a first voltage, and the material is in the second magnetic state when the contact is at a second voltage. A conductor is positioned proximate to and extending around the plurality of memory cells. An inductive voltage across the conductor varies when at least one of the memory cells changes magnetic state. A detection device determines the magnetic state of the memory cells based on an inductive voltage measurement.Type: GrantFiled: July 12, 2005Date of Patent: April 29, 2008Assignee: The Regents of the University of CaliforniaInventors: Alexander Khitun, Kang L. Wang
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Publication number: 20070296516Abstract: Nano-scale and multi-scale computational architectures using spin waves as a physical mechanism for device interconnection are provided. Solid-state spin-wave computing devices using nano-scale and multi-scale computational architectures comprised of a plurality of inputs and a plurality of outputs are described where such devices are configured to simultaneously transmit data elements from the inputs to the outputs by using spin-waves of differing frequencies. These devices include but are not limited to a spin-wave crossbar, a spin-wave reconfigurable mesh, a spin-wave fully-interconnected cluster, a hierarchical multi-scale spin-wave crossbar, a hierarchical multi-scale spin-wave reconfigurable mesh and a hierarchical multi-scale spin-wave fully-interconnected cluster.Type: ApplicationFiled: January 30, 2007Publication date: December 27, 2007Inventors: Mary Eshaghian-Wilner, Alexander Khitun, Kang Wang
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Publication number: 20070014147Abstract: A low-power memory device that uses hole-mediated ferromagnetism creates substantial advantages over conventional systems. Some of these advantages include reducing power consumption by several orders of magnitude and facilitating wireless monitoring of memory cells. In one implementation, an electronic device is described that includes a plurality of memory cells. Each of the memory cells has a material with first and second magnetic states. The material is in the first magnetic state when a contact associated with the material is at a first voltage, and the material is in the second magnetic state when the contact is at a second voltage. A conductor is positioned proximate to and extending around the plurality of memory cells. An inductive voltage across the conductor varies when at least one of the memory cells changes magnetic state. A detection device determines the magnetic state of the memory cells based on an inductive voltage measurement.Type: ApplicationFiled: July 12, 2005Publication date: January 18, 2007Inventors: Alexander Khitun, Kang Wang