Patents by Inventor Alexander Kontos
Alexander Kontos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10004133Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.Type: GrantFiled: July 7, 2017Date of Patent: June 19, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Shurong Liang, Costel Biloiu, Glen F. R. Gilchrist, Vikram Singh, Christopher Campbell, Richard Hertel, Alexander Kontos, Piero Sferlazzo, Tsung-Liang Chen
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Publication number: 20170311430Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.Type: ApplicationFiled: July 7, 2017Publication date: October 26, 2017Inventors: Shurong Liang, Costel Biloiu, Glen F.R. Gilchrist, Vikram Singh, Christopher Campbell, Richard Hertel, Alexander Kontos, Piero Sferlazzo, Tsung-Liang Chen
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Patent number: 9706634Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.Type: GrantFiled: December 16, 2015Date of Patent: July 11, 2017Assignee: Varian Semiconductor Equipment Associates, IncInventors: Shurong Liang, Costel Biloiu, Glen F. R. Gilchrist, Vikram Singh, Christopher Campbell, Richard Hertel, Alexander Kontos, Piero Sferlazzo, Tsung-Liang Chen
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Patent number: 9660185Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.Type: GrantFiled: May 17, 2016Date of Patent: May 23, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Roman Gouk, Steven Verhaverbeke, Alexander Kontos, Adolph Miller Allen, Kevin Moraes
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Publication number: 20170042010Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.Type: ApplicationFiled: December 16, 2015Publication date: February 9, 2017Inventors: Shurong Liang, Costel Biloiu, Glen F.R. Gilchrist, Vikram Singh, Christopher Campbell, Richard Hertel, Alexander Kontos, Piero Sferlazzo, Tsung-Liang Chen
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Publication number: 20160260896Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.Type: ApplicationFiled: May 17, 2016Publication date: September 8, 2016Inventors: Roman GOUK, Steven VERHAVERBEKE, Alexander KONTOS, Adolph Miller ALLEN, Kevin MORAES
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Patent number: 9343664Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.Type: GrantFiled: April 2, 2015Date of Patent: May 17, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Roman Gouk, Steven Verhaverbeke, Alexander Kontos, Adolph Miller Allen, Kevin Moraes
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Publication number: 20150214475Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.Type: ApplicationFiled: April 2, 2015Publication date: July 30, 2015Inventors: Roman GOUK, Steven VERHAVERBEKE, Alexander KONTOS, Adolph Miller ALLEN, Kevin MORAES
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Patent number: 8746666Abstract: A media carrier, adapted to hold a plurality of pieces of magnetic media, is disclosed. This media carrier can be placed on the workpiece support, or platen, allowing the magnetic media to be processed. In some embodiments, the media carrier is designed such that only one side of the magnetic media is exposed, requiring a robot or other equipment to invert each piece of media in the carrier to process the second side. In other embodiments, the media carrier is designed such that both sides of the magnetic media are exposed. In this scenario, the media carrier is inverted on the platen to allow processing of the second side.Type: GrantFiled: May 5, 2011Date of Patent: June 10, 2014Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Richard Hertel, Julian Blake, Edward Macintosh, Alexander Kontos, Frank Sinclair, Christopher Rowland, Mayur Jagtap, Sankar Ganesh Kolappan
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Publication number: 20140131308Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.Type: ApplicationFiled: March 13, 2013Publication date: May 15, 2014Inventors: Roman GOUK, Steven VERHAVERBEKE, Alexander KONTOS, Adolph Miller ALLEN, Kevin MORAES
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Patent number: 8372735Abstract: A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.Type: GrantFiled: December 19, 2008Date of Patent: February 12, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Christopher Hatem, Ludovic Godet, Alexander Kontos
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Publication number: 20100041218Abstract: A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.Type: ApplicationFiled: December 19, 2008Publication date: February 18, 2010Inventors: Christopher Hatem, Ludovic Godet, Alexander Kontos