Abstract: Systems and methods for volumetric microlithography are described, wherein the method may include receiving a data representation of a 3D target structure and determining a plurality of planes in a volume of a photosensitive medium or in a build volume, each plane of the plurality of planes associated with a respective depth of a plurality of depths in the build volume, the plurality of depths being defined along an optical axis of an exposure system. Each plane may correspond to a possible position of a focal plane of the exposure system. Preferably, the depths in the plurality of depths are mutually different. The photosensitive medium may include an activation compound for initiating a chemical reaction in the photosensitive medium, the activation compound being activatable by light of a first wavelength.

Abstract: A method is described for controlled polymerization of a target zone in a photopolymerizable medium wherein the method comprises a processor connectable to an exposure system for illuminating a target zone in a photopolymerizable medium receiving a 3D data representation of a 3D model of an object and using the 3D model to determine a volume of the target zone, the volume being shaped according to the 3D model; the processor determining a target energy field E0 defining an energy for volume elements in the medium that is needed to achieve polymerization inside the target zone, the determining being based on a model of the polymerization process in the medium; the processor using the target energy field E0 and a light propagation model M to compute a solution I0 for the equation E0=t·M[I0] wherein I0 is a direction-dependent illumination field needed for achieving energy deposition in the medium according to the target energy field E0 and t is the exposure time; and, the processor controlling the exposure syst

Abstract: An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor wafers as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate.

Abstract: An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor waters as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate.

Abstract: The disclosure is directed to process and apparatus for the removal, site preparation, and replacement of any single connector pin contained within a sizeable array of closely spaced very small connector pins on an electronic packaging structure (substrate or module) without causing deleterious metallurgical effects either to the remaining pins or the ceramic substrate.