Abstract: Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. An HVPE reactor includes generation, accumulation, and growth zones. A source material for growth of indium nitride is generated and collected inside the reactor. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is cooled and condenses into a liquid or solid condensate or source material having an indium-containing compound. The source material is collected in the accumulation zone. Vapor or gas resulting from evaporation of the condensate forms a second gas product, which reacts with a second reactive gas in the growth zone for growth of indium nitride.

Abstract: Apparatus and methods for controlling gas flows in a HVPE reactor. Gas flows may be controlled by a gas focusing element. Gas injection and gas collection tubes are positioned within an outer tube and are separated from each other to define a space there between. A gas, such as HCl gas, flows over the outer surfaces of the injection and collection tubes to contain gases within the space as they flow from the injection tube to the collection tube and over a seed upon which group III nitride materials are grown. Gas flows may also be controlled by a multi-tube structure that separates gases until they reach a grown zone. A multi-tube structure may include four tubes, which separate flows of a halide reactive gas, a reaction product that flows with a carrier gas, and ammonia.

Abstract: HVPE reactors and methods for growth of p-type group III nitride materials including p-GaN. A reaction product such as gallium chloride is delivered to a growth zone inside of a HVPE reactor by a carrier gas such as Argon. The gallium chloride reacts with a reactive gas such as ammonia in the growth zone in the presence of a magnesium-containing gas to grow p-type group III nitride materials. The source of magnesium is an external, non-metallic compound source such as Cp2Mg.

Abstract: Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. A HVPE growth apparatus includes generation, accumulation and growth zones. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is transported to the accumulation zone where it cools and condenses into a source material having an indium-containing compound. The source material is collected in the accumulation zone and evaporated. Vapor or gas resulting from evaporation of the source material forms reacts with a second reactive gas in the growth zone for growth of ternary and quaternary materials including indium gallium nitride, indium aluminum nitride, and indium gallium aluminum nitride.