Patents by Inventor Alexander Lee Martin

Alexander Lee Martin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming lateral heterojunction bipolar devices and the resulting devices
    Patent number: 11133397
    Abstract: One illustrative method of forming heterojunction bipolar devices includes, among other things, forming a first gate structure above an active semiconductor layer, forming a second gate structure adjacent a first side of the first gate structure, forming a third gate structure adjacent a second side of the first gate structure, forming an emitter of a bipolar transistor in the active semiconductor layer between the first gate structure and the second gate structure, forming a collector of the bipolar transistor in the active semiconductor layer between the first gate structure and the third gate structure, and forming a first base contact contacting the active region adjacent an end of the first gate structure, wherein a portion of the active semiconductor layer positioned under the first gate structure defines a base of the bipolar transistor.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: September 28, 2021
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Alexander Lee Martin, Jagar Singh
  • METHOD FOR FORMING LATERAL HETEROJUNCTION BIPOLAR DEVICES AND THE RESULTING DEVICES
    Publication number: 20200388696
    Abstract: One illustrative method of forming heterojunction bipolar devices includes, among other things, forming a first gate structure above an active semiconductor layer, forming a second gate structure adjacent a first side of the first gate structure, forming a third gate structure adjacent a second side of the first gate structure, forming an emitter of a bipolar transistor in the active semiconductor layer between the first gate structure and the second gate structure, forming a collector of the bipolar transistor in the active semiconductor layer between the first gate structure and the third gate structure, and forming a first base contact contacting the active region adjacent an end of the first gate structure, wherein a portion of the active semiconductor layer positioned under the first gate structure defines a base of the bipolar transistor.
    Type: Application
    Filed: June 4, 2019
    Publication date: December 10, 2020
    Inventors: Alexander Lee Martin, Jagar Singh