Abstract: A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.

Abstract: An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface and an opposing backside surface with a plurality of spaced apart mesas. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate. Heater coils located at peripheral and central portions of the ceramic puck allow independent control of temperatures of the central and peripheral portions of the ceramic puck. The chuck is supported by a base having a groove with retained air. The chuck and base can also have an overlying edge ring and clamp ring.

Abstract: A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling radial distribution of plasma ion density in the process region by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, an inductively coupled plasma source power applicator overlying the ceiling, and an RF power generator coupled to the inductively coupled source power applicator, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode.

Abstract: A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer while inductively coupling RF plasma source power into the process region. A particular plasma ion density level is established by maintaining the total amount of plasma source power inductively and capacitively coupled into the chamber at a level that provides the desired plasma ion density. Chemical species distribution or content in the process region plasma is controlled by adjusting the ratio between the amounts of the capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power.

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a toroidal plasma source comprising a hollow reentrant conduit external of the chamber and having a pair of ends connected to the interior of the chamber and forming a closed toroidal path extending through the conduit and across the diameter of the workpiece support, and an RF power applicator adjacent a portion of the reentrant external conduit, and an RF source power generator coupled to the RF power applicator of the toroidal plasma source.

Abstract: A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling plasma ion density by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, an inductively coupled plasma source power applicator overlying the ceiling, and an RF power generator coupled to the inductively coupled source power applicator, and a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and a VHF power generator coupled to the capacitively coupled source power applicator.

Abstract: A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer while inductively coupling RF plasma source power into the process region. A particular plasma ion density level is established by maintaining the total amount of plasma source power inductively and capacitively coupled into the process region at a level that provides the desired plasma ion density. The plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power.

Abstract: A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and adjusting the extent of dissociation of species in the plasma by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power. The method may further include controlling plasma ion density in the chamber by controlling the total amount of plasma source power capacitively and inductively coupled into the process region.

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator that includes a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

Abstract: A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling dissociation of species in the process region by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

Abstract: A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpiece support, a VHF power generator being coupled to the capacitively coupled source power applicator, a plasma bias power applicator or electrode in the workpiece support and an RF bias power generator coupled to the plasma bias power applicator. A controller adjusts the relative amounts of power simultaneously coupled to plasma in the chamber and conduit by the toroidal plasma source and by the capacitively coupled plasma source power applicator.

Abstract: A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

Abstract: A heat transfer assembly having a heat spreading member sandwiched between a heat source and a heat sink is disclosed. The heat sink, the heat spreading member, and the heat source are pressed against the bottom of a substrate support plate by a bias member.

Abstract: A heat transfer assembly having a heat spreading member sandwiched between a heat source and a heat sink is disclosed. The heat sink, the heat spreading member, and the heat source are pressed against the bottom of a substrate support plate by a bias member.