Abstract: An apparatus for storing an electrical energy comprising: a first conductive electrode, a second conductive electrode, an isolative layer disposed between the first and second conductive electrodes, a first magnetic layer disposed between the isolative layer and the first conductive electrode, and a second magnetic layer disposed between the isolative layer and the second conductive electrode, wherein the isolative layer comprising at least: a first sublayer having a band gap equal or more than 5 eV, and a second sublayer having the band gap less than 5 eV.

Abstract: One embodiment of a nonvolatile memory cell comprises a substrate having a surface, a bidirectional current switch comprising a first electrode, a second electrode, and a semiconductor layer disposed between the first and second electrodes, and a magnetoresistive element having a direct contact with the bidirectional current switch and comprising a free ferromagnetic layer having a reversible magnetization direction, a pinned ferromagnetic layer having a fixed magnetization direction, and a tunnel barrier layer disposed between the free and pinned ferromagnetic layers, wherein the magnetization direction of the free ferromagnetic layer is reversed by a bidirectional spin polarized current running through the magnetoresitive element in a direction perpendicular to the substrate surface, and wherein a magnitude of the spin polarized current is controlled by the bidirectional current switch. Other embodiments are described and shown.

Abstract: One embodiment of a magnetoresistive element comprises: a free ferromagnetic layer comprising a reversible magnetization direction directed substantially perpendicular to a film surface in its equilibrium state; a pinned ferromagnetic layer comprising a fixed magnetization direction directed substantially perpendicular to the film surface; a nonmagnetic tunnel barrier layer disposed between the free ferromagnetic layer and the pinned ferromagnetic layer and having a direct contact with the free and pinned ferromagnetic layers; a first nonmagnetic conductive layer disposed adjacent to and having a direct contact with a side of a free ferromagnetic layer opposite to the tunnel barrier layer; and a second nonmagnetic conductive layer disposed adjacent to a side of the pinned ferromagnetic layer opposite to the tunnel barrier layer, wherein the free ferromagnetic layer and the pinned ferromagnetic layers comprise at least one element selected from the group consisting of Fe, Co, and Ni, at least one element selec

Abstract: An apparatus for storing electrical energy comprising at least: a first multilayer section; a second multilayer section disposed above the first multilayer section; and a spacer layer disposed between the first and second multilayer sections and comprising a dielectric material, wherein each of the first and second multilayer sections comprising a pinned magnetic layer having a fixed magnetization direction, a free magnetic layer having a reversible magnetization direction, and an isolative layer disposed between the pinned and free magnetic layers, the pinned and free magnetic layers are substantially anti-ferromagnetically exchange coupled to each other through the isolative layer; and wherein the pinned magnetic layers of the first and second multilayer sections are electrically coupled in parallel with each other, and the free magnetic layers of the first and second multilayer sections are electrically coupled in parallel with each other.

Abstract: A memory cell with a substrate; a first transistor comprising a first gate width and a terminal; resistive memory elements above the transistor, each element comprising an element width, a first and second end; parallel conductive lines above the first memory elements and coupled to the first elements at their first ends; a second plurality of resistive memory elements disposed above the conductive lines, each element comprising the width, the first end, and the second end and coupled to the conductive lines at their first ends; a second transistor disposed above the second plurality of resistive memory elements and comprising a gate width and a terminal, the first memory elements is jointly coupled to the terminal of the first transistor at their second ends; the second memory elements is jointly coupled to the terminal of the second transistor at their second ends; and the gate width is larger than the element width.

Abstract: A method of fabricating a magnetoresistive element, the method comprising: forming a first plurality of layers without breaking a vacuum, the first plurality of layers sequentially comprising: a first nonmagnetic conductive layer; a first ferromagnetic layer comprising an amorphous structure and a first magnetization direction; a nonmagnetic tunnel barrier layer; a second ferromagnetic layer comprising an amorphous structure and a second magnetization direction, and a getter layer having a direct contact with the second ferromagnetic layer; annealing the first plurality of layers; removing the getter layer and a portion of the second ferromagnetic layer adjacent to the getter layer; forming above the second ferromagnetic layer a second plurality of layers such that interface between the second ferromagnetic layer and the second plurality of layers is formed without breaking a vacuum after removing the getter layer and the portion of the second ferromagnetic layer, the second plurality of layers sequentially c

Abstract: One embodiment of a magnetic random access memory includes a magnetic memory cell comprising a magnetoresistive element including a free ferromagnetic layer comprising a reversible magnetization direction directed substantially perpendicular to a film plane in its equilibrium state, a pinned ferromagnetic layer comprising a fixed magnetization direction directed substantially perpendicular to the film plane, a tunnel barrier layer disposed between the free and pinned layers, and an assist ferromagnetic layer disposed adjacent to the free layer; circuitry for providing a bias magnetic field pulse along a magnetic hard axis of the free layer, circuitry for providing a spin-polarized current pulse through the magnetoresistive element in a direction perpendicular to the film plane, wherein the magnetization direction in the free layer is reversed by a collective effect of the bias magnetic field pulse and the spin-polarizing current pulse.

Abstract: A method for writing to a magnetic memory comprising: providing a plurality of magnetic tunnel junctions arranged into columns and rows, applying a first current to a first conductive line coupled to a row of magnetic tunnel junctions at their ends adjacent to a free ferromagnetic layer to produce a bias magnetic field; and applying a second current to a second conductive line electrically coupled to a column of magnetic tunnel junctions at their ends adjacent to a pinned ferromagnetic layer to produce a spin momentum transfer in the free ferromagnetic layer of a first magnetic tunnel junction disposed at a first intersection region formed by the first conductive line and the second conductive line; wherein a joint effect of the first and second currents applied simultaneously reverses a magnetization direction of the free ferromagnetic layer of the first magnetic tunnel junction. Other embodiments of the magnetic memory are disclosed.

Abstract: A method for writing to a magnetic memory comprising: providing a plurality of magnetic tunnel junctions arranged into columns and rows, applying a first current to a first conductive line coupled to a row of magnetic tunnel junctions at their ends adjacent to a free ferromagnetic layer to produce a bias magnetic field; and applying a second current to a second conductive line electrically coupled to a column of magnetic tunnel junctions at their ends adjacent to a pinned ferromagnetic layer to produce a spin momentum transfer in the free ferromagnetic layer of a first magnetic tunnel junction disposed at a first intersection region formed by the first conductive line and the second conductive line; wherein a joint effect of the first and second currents applied simultaneously reverses a magnetization direction of the free ferromagnetic layer of the first magnetic tunnel junction. Other embodiments of the magnetic memory are disclosed.

Abstract: A magnetic memory device that comprises a substrate, a memory cell including a magnetic tunnel junction which comprises a free ferromagnetic layer having a reversible magnetization direction directed perpendicular to the substrate, a pinned ferromagnetic layer having a fixed magnetization direction directed perpendicular to the substrate, and an insulating tunnel barrier layer disposed between the pinned and free layers, a first electrical circuit for applying a first current to a first conductor electrically coupled to the free layer to produce a bias magnetic field along a hard axis of the free layer, a second electrical circuit for applying a second current to a second conductor electrically coupled to the pinned layer to cause a spin momentum transfer in the free layer, wherein magnitudes of the bias magnetic field and spin momentum transfer in combination exceed a threshold and thus reverse the magnetization direction of the free layer.

Abstract: A multi-bit cell of magnetic random access memory comprises a magnetoresistive element including first and second free layers, each free layer comprising a reversible magnetization direction directed substantially perpendicular to a layer plane in its equilibrium state and a switching current, first and second tunnel barrier layers, and a pinned layer comprising a fixed magnetization direction directed substantially perpendicular to the layer plane, the pinned layer is disposed between the first and second free layers and is separated from the free layers by one of the tunnel barrier layers; a selection transistor electrically connected to a word line, and a bit line intersecting the word line; the magnetoresistive element is disposed between the bit line and the selection transistor and is electrically connected to the bit line and the selection transistor, wherein the first and second free layers have substantially different switching currents.

Abstract: One embodiment of a magnetic memory device comprises a substrate and a plurality of planar memory arrays stacked on the substrate, each memory array includes a plurality of parallel first conductive lines, each first conductive line includes a ferromagnetic cladding, a plurality of parallel second conductive lines overlapping the first conductive lines at a plurality of intersection regions, a plurality of magnetic tunnel junctions, each magnetic tunnel junction has a controllable electrical resistance, is disposed at an intersection region and electrically coupled to one of the first conductive lines at its first end and to one of the second conductive lines at its second end. The electrical resistance of the magnetic tunnel junction is controlled by a joint effect of a spin-polarized current running between the first and second ends and a bias magnetic field applied simultaneously to said each magnetic tunnel junction. Other embodiments are described and shown.

Abstract: One embodiment of a photovoltaic system comprises a solar cell, a blocking device and a magnetic capacitor, wherein the solar cell and the magnetic capacitor are stacked over each other, and wherein the solar cell and the magnetic capacitor are electrically coupled to each other through the blocking device. Other embodiments the photovoltaic system are described and shown.

Abstract: One embodiment of a memory cell comprising: a substrate; a first transistor comprising a first gate width and a terminal; a first plurality of resistive memory elements disposed above the first transistor, each resistive memory element comprising an element width, a first end, and a second end; a plurality of parallel conductive lines disposed above the first plurality of resistive memory elements and separately electrically coupled to the first plurality of resistive memory elements at their first ends; a second plurality of resistive memory elements disposed above the plurality of parallel conductive lines, each resistive memory element comprising the element width, the first end, and the second end and separately electrically coupled to the plurality of conductive lines at their first ends; a second transistor disposed above the second plurality of resistive memory elements and comprising a gate width and a terminal, wherein the first plurality of resistive memory elements is jointly electrically coupled t

Abstract: One embodiment of a nonvolatile memory cell comprises a substrate having a surface, a bidirectional current switch comprising a first electrode, a second electrode, and a semiconductor layer disposed between the first and second electrodes, and a magnetoresistive element having a direct contact with the bidirectional current switch and comprising a free ferromagnetic layer having a reversible magnetization direction, a pinned ferromagnetic layer having a fixed magnetization direction, and a tunnel barrier layer disposed between the free and pinned ferromagnetic layers, wherein the magnetization direction of the free ferromagnetic layer is reversed by a bidirectional spin polarized current running through the magnetoresitive element in a direction perpendicular to the substrate surface, and wherein a magnitude of the spin polarized current is controlled by the bidirectional current switch. Other embodiments are described and shown.

Abstract: One embodiment of an apparatus to store electrical energy comprises at least: a first multilayer section, a second multilayer section disposed above the first multilayer section; and an electrical battery comprising a first terminal having a positive polarity and a second terminal having a negative polarity, wherein each of the first and second multilayer sections comprises at least a first magnetic layer having a fixed magnetization direction, a second magnetic layer having a reversible magnetization, and an isolative layer disposed between the first and second magnetic layers, the first and second magnetic layers are substantially anti-ferromagnetically coupled to each other through the isolative layer, and wherein the first multilayer section and the section multilayer sections are coupled to the first and second terminals of the electrically battery. Other embodiments are described and shown.

Abstract: A method of fabricating a magnetoresistive element, the method comprising: forming a first plurality of layers without breaking a vacuum, the first plurality of layers sequentially comprising: a first nonmagnetic conductive layer; a first ferromagnetic layer comprising an amorphous structure and a first magnetization direction; a nonmagnetic tunnel barrier layer; a second ferromagnetic layer comprising an amorphous structure and a second magnetization direction, and a getter layer having a direct contact with the second ferromagnetic layer; annealing the first plurality of layers; removing the getter layer and a portion of the second ferromagnetic layer adjacent to the getter layer; forming above the second ferromagnetic layer a second plurality of layers such that interface between the second ferromagnetic layer and the second plurality of layers is formed without breaking a vacuum after removing the getter layer and the portion of the second ferromagnetic layer, the second plurality of layers sequentially c

Abstract: One embodiment of a magnetic random access memory includes a magnetic memory cell comprising a transistor disposed on a substrate, electrically coupled to a first conductive line and comprising a gate width; a plurality of magnetoresistive elements, each magnetoresistive element comprising an element width, a pinned magnetic layer comprising a fixed magnetization direction directed perpendicular to the substrate, a free magnetic layer comprising a reversible magnetization direction directed perpendicular to the substrate, and a tunnel barrier layer residing between the pinned and free layers; and a plurality of parallel second conductive lines overlapping the first conductive line.

Abstract: One embodiment of a magnetoresistive element comprises: a free ferromagnetic layer comprising a reversible magnetization direction directed substantially perpendicular to a film surface in its equilibrium state; a pinned ferromagnetic layer comprising a fixed magnetization direction directed substantially perpendicular to the film surface; a nonmagnetic tunnel barrier layer disposed between the free ferromagnetic layer and the pinned ferromagnetic layer and having a direct contact with the free and pinned ferromagnetic layers; a first nonmagnetic conductive layer disposed adjacent to and having a direct contact with a side of a free ferromagnetic layer opposite to the tunnel barrier layer; and a second nonmagnetic conductive layer disposed adjacent to a side of the pinned ferromagnetic layer opposite to the tunnel barrier layer, wherein the free ferromagnetic layer and the pinned ferromagnetic layers comprise at least one element selected from the group consisting of Fe, Co, and Ni, at least one element selec

Abstract: A magnetoresistive element (and method of fabricating the magnetoresistive element) that includes a free ferromagnetic layer comprising a first reversible magnetization direction directed substantially perpendicular to a film surface, a pinned ferromagnetic layer comprising a second fixed magnetization direction directed substantially perpendicular to the film surface, and a nonmagnetic insulating tunnel barrier layer disposed between the free ferromagnetic layer and the pinned ferromagnetic layer, wherein the free ferromagnetic layer, the tunnel barrier layer, and the pinned ferromagnetic layer have a coherent body-centered cubic (bcc) structure with a (001) plane oriented, and a bidirectional spin-polarized current passing through the coherent structure in a direction perpendicular to the film surface reverses the magnetization direction of the free ferromagnetic layer.