Abstract: A display system includes a first die configured to emit light of a first color, a second die configured to emit light of a second color and a third die configured to emit light of a third color. The display system also includes a lens system and an optical waveguide system. The optical waveguide system includes a first grating portion configured to couple in an incident light to the optical waveguide and a second grating portion configured to couple out a transmitting light from the optical waveguide. The first die, the second die and the third die are contained in one package. The lens system is arranged between the package and the optical waveguide system, and is configured to collimate the light of the first color, the light of the second color and the light of the third color onto the first grating portion of the optical waveguide system.

Abstract: A method is provided for optimizing beam shaping of a display comprising an array of light emitting elements, each corresponds to a pixel of said display, in order to adjust angular distribution of light pattern in an optical waveguide. The method comprises the step of simulating a luminance distribution for positional and angular characteristics of luminance of the optical waveguide. The method further comprises the step of measuring a luminance distribution for positional and angular characteristics of luminance of the optical waveguide. The method further comprises the step of comparing the simulated luminance distribution with the measured luminance distribution of the optical waveguide. In addition, the method further comprises the step of defining an optimum emission pattern for every pixel for every color of the display based on the simulated and measured luminance distribution.

Abstract: An optical device and a method for fabricating an optical device are described. The optical device may be a light emitting diode (LED) device, e.g. a micro-LED (?LED) device, or a photodiode (PD) device, e.g. an imager. The method comprises processing, on a first semiconductor wafer, an array including a plurality of compound semiconductor LEDs or compound semiconductor PDs and a plurality of first contacts, each first contact being electrically connected to one of the LEDs or PDs. The method further comprises processing, on a second semiconductor wafer, a CMOS IC and a plurality of second contacts electrically connected to the CMOS IC. The method further comprises hybrid bonding the first semiconductor wafer to the second semiconductor wafer such that the plurality of LEDs or PDs are individually connected to the CMOS IC via the first and second contacts.

Abstract: Example embodiments relate to monolithically integrated antenna devices. One embodiment includes a monolithically integrated antenna device that includes a substrate having a first surface and a second surface. The monolithically integrated antenna device also includes a transistor component layer that includes at least one electronic component therein. Further, the monolithically integrated antenna device includes at least one antenna structure formed on the substrate or the transistor component layer. The antenna structure is configured to operate in a frequency range of between 30 kHz and 2.4 GHz. The substrate is configured to have a size that is the same or larger than the at least one antenna structure. The at least one antenna structure is formed in a stack with the transistor component layer and the substrate. The monolithically integrated antenna device is configured to shield the at least one electronic component in the transistor component layer from electromagnetic interference.

Abstract: A method is provided for obtaining one or more Light Emitting Diode (LED) devices reconstituted over a carrier substrate. The method includes providing a silicon-based semiconductor substrate as the carrier substrate; providing, per each of the one or more LED devices, a compound semiconductor stack including an LED layer; applying a SiCN layer to the stack and the substrate, respectively; bonding the stack to the substrate, wherein the SiCN layer applied to the stack and the SiCN layer applied to the substrate are contacted; and annealing, after bonding, the bonded stack and substrate at a temperature equal to or higher than a processing temperature for completing the LED device from the stack, wherein said temperatures are at least 400° C. A semiconductor structure including the one or more LED devices reconstituted over a carrier substrate is also provided.

Abstract: Example embodiments relate to monolithically integrated antenna devices. One embodiment includes a monolithically integrated antenna device that includes a substrate having a first surface and a second surface. The monolithically integrated antenna device also includes a transistor component layer that includes at least one electronic component therein. Further, the monolithically integrated antenna device includes at least one antenna structure formed on the substrate or the transistor component layer. The antenna structure is configured to operate in a frequency range of between 30 kHz and 2.4 GHz. The substrate is configured to have a size that is the same or larger than the at least one antenna structure. The at least one antenna structure is formed in a stack with the transistor component layer and the substrate. The monolithically integrated antenna device is configured to shield the at least one electronic component in the transistor component layer from electromagnetic interference.

Abstract: A method is provided for obtaining one or more Light Emitting Diode (LED) devices reconstituted over a carrier substrate. The method includes providing a silicon-based semiconductor substrate as the carrier substrate; providing, per each of the one or more LED devices, a compound semiconductor stack including an LED layer; applying a SiCN layer to the stack and the substrate, respectively; bonding the stack to the substrate, wherein the SiCN layer applied to the stack and the SiCN layer applied to the substrate are contacted; and annealing, after bonding, the bonded stack and substrate at a temperature equal to or higher than a processing temperature for completing the LED device from the stack, wherein said temperatures are at least 400° C. A semiconductor structure including the one or more LED devices reconstituted over a carrier substrate is also provided.

Abstract: An optical device and a method for fabricating an optical device are described. The optical device may be a light emitting diode (LED) device, e.g. a micro-LED (?LED) device, or a photodiode (PD) device, e.g. an imager. The method comprises processing, on a first semiconductor wafer, an array including a plurality of compound semiconductor LEDs or compound semiconductor PDs and a plurality of first contacts, each first contact being electrically connected to one of the LEDs or PDs. The method further comprises processing, on a second semiconductor wafer, a CMOS IC and a plurality of second contacts electrically connected to the CMOS IC. The method further comprises hybrid bonding the first semiconductor wafer to the second semiconductor wafer such that the plurality of LEDs or PDs are individually connected to the CMOS IC via the first and second contacts.