Patents by Inventor Alexander Mostov

Alexander Mostov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9859852
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: January 2, 2018
    Assignee: DSP GROUP LTD.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz
  • Patent number: 9813031
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 wireless local area network (WLAN), third generation (3G) and fourth generation (4G) cellular standards, BLUETOOTH™, ZIGBEE™, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard Complementary metal-oxide-semiconductor (CMOS) processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: November 26, 2015
    Date of Patent: November 7, 2017
    Assignee: DSP GROUP LTD.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz
  • Patent number: 9667206
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: May 30, 2017
    Assignee: DSP GROUP Ltd.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz, Ilya Sima
  • Patent number: 9608577
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: March 28, 2017
    Assignee: DSP GROUP LTD.
    Inventors: Alexander Mostov, Sergey Anderson, Udi Suissa, Ilya Sima, Avi Bauer
  • Patent number: 9413303
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: August 9, 2016
    Assignee: DSP GROUP, LTD.
    Inventors: Alexander Mostov, Sergey Anderson, Udi Suissa
  • Publication number: 20160149543
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: November 26, 2015
    Publication date: May 26, 2016
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz
  • Patent number: 9312820
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: April 12, 2016
    Assignee: DSP GROUP LTD.
    Inventors: Alexander Mostov, Yaron Hasson, Ron Pongratz, Sharon Betzalel
  • Patent number: 9294050
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: March 22, 2016
    Assignee: DSP Group Ltd.
    Inventors: Alexander Mostov, Yaron Hasson
  • Publication number: 20150357978
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: June 25, 2015
    Publication date: December 10, 2015
    Inventors: Sergey Anderson, Alexander Mostov
  • Patent number: 9208943
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, BLUETOOTH®, ZIGBEE®, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: December 8, 2015
    Assignee: DSP GROUP LTD.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz
  • Publication number: 20150194942
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: January 22, 2015
    Publication date: July 9, 2015
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz, Ilya Sima
  • Patent number: 9070506
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: June 30, 2015
    Assignee: DSP GROUP, LTD.
    Inventors: Sergey Anderson, Alexander Mostov
  • Publication number: 20140085002
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: September 23, 2013
    Publication date: March 27, 2014
    Applicant: DSP Group, Ltd.
    Inventors: Sergey Anderson, Alexander Mostov
  • Publication number: 20140087671
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: September 23, 2013
    Publication date: March 27, 2014
    Applicant: DSP Group, Ltd.
    Inventors: Alexander Mostov, Sergey Anderson, Udi Suissa, IIya Sima, Avi Bauer
  • Publication number: 20140085001
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: September 23, 2013
    Publication date: March 27, 2014
    Applicant: DSP Group, Ltd.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz
  • Publication number: 20140087673
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: September 23, 2013
    Publication date: March 27, 2014
    Applicant: DSP Group, Ltd.
    Inventors: Alexander Mostov, Yaron Hasson, Ron Pongratz
  • Publication number: 20140087672
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: September 23, 2013
    Publication date: March 27, 2014
    Applicant: DSP Group, Ltd.
    Inventors: Alexander Mostov, Yaron Hasson
  • Publication number: 20140084700
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: September 23, 2013
    Publication date: March 27, 2014
    Applicant: DSP Group, Ltd.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz
  • Publication number: 20140085006
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: September 23, 2013
    Publication date: March 27, 2014
    Applicant: DSP Group, Ltd.
    Inventors: Alexander Mostov, Sergey Anderson, Udi Suissa
  • Patent number: 7386075
    Abstract: An apparatus for and method of extending the dynamic range of a RF communications receiver. The invention provides a mechanism for controlling the gain of both the LNA and down conversion mixer in the front end portion of an RF receiver. Both the LNA and the mixer are adapted to have both low and high gain modes of operation. The control mechanism typically comprises a two bit gain control that places both the LNA and mixer in one of four operating gain mode states. The selection of the most appropriate operating gain mode state, is preferably determined in accordance with various metrics such as the received levels of the desired signal, levels of interference signals, bit error rate and receiver RSSI.
    Type: Grant
    Filed: July 12, 2005
    Date of Patent: June 10, 2008
    Assignee: Texas Instruments Incorporated
    Inventors: Alexander Mostov, Oren Eliezer