Abstract: A spray gun cover for protecting a spray gun upper body from overspray is provided. The spray gun cover comprises a cover front wall, a cover rear wall, and a cover center body. The cover front wall is form-fitted to a front portion of the spray gun upper body surrounding a spray nozzle of the spray gun and has a front aperture disposed therein such that the front aperture coincides with the spray nozzle. The cover rear wall is form-fitted to a rear portion of the spray gun upper body. The cover center body is disposed between the cover front wall and the cover rear wall and has a bottom aperture disposed in a bottom portion thereof. The bottom aperture is designed for enabling insertion of the spray gun upper body therethrough into the spray gun cover.

Abstract: A layout structure is provided with a conducting line extending in a conducting line direction, the conducting line being arranged within a substrate area, a fill element being arranged within the substrate area at a predetermined distance from the conducting line, the fill element having a fill element axis extending perpendicularly to a side of the fill element in a fill element direction, an angle between the conducting line direction and the fill element direction being greater than 0° and smaller than 90°.

Abstract: A multiple gate field-effect transistor is built from an overlapping mesh assembly. The assembly comprises a first layer comprising a semiconductor material formed into at least one fin, at least one source, and at least one drain. The first layer comprises a portion of a first mesh, electrically separated from the rest of the mesh. Similarly, a second layer is formed over the first layer and electrically isolated from the first layer, the second layer being electrically conductive and comprising a gate for the at least on fin of the transistor. The second layer comprises a portion of a second mesh offset from the first mesh and overlapping the first mesh, the second layer of the MuGFET device electrically separated from the rest of the second mesh.

Abstract: A multiple gate field-effect transistor is built from an overlapping mesh assembly. The assembly comprises a first layer comprising a semiconductor material formed into at least one fin, a least one source, and at least one drain. The first layer comprises a portion of a first mesh, electrically separated from the rest of the mesh. Similarly, a second layer is formed over the first layer and electrically isolated from the first layer, the second layer being electrically conductive and comprising a gate for the at least one fin of the transistor. The second layer comprises a portion of a second mesh offset from the first mesh and overlapping the first mesh, the second layer of the MuGFET device electrically separated from the rest of the second mesh.

Abstract: A layout structure is provided with a conducting line extending in a conducting line direction, the conducting line being arranged within a substrate area, a fill element being arranged within the substrate area at a predetermined distance from the conducting line, the fill element having a fill element axis extending perpendicularly to a side of the fill element in a fill element direction, an angle between the conducting line direction and the fill element direction being greater than 0° and smaller than 90°.

Abstract: A method for checking electrical networks, in which the geometric characteristics of all the components in the network are checked. Components that have predetermined geometric characteristics are marked. A test is then carried out to determine whether the marked components are disposed at required points in the network, that is to say whether they are interconnected as required. Conversely, it is also possible to check the interconnection of the components in the network, to mark the components with the required interconnection, and then to check whether they also have the required geometric characteristics.