Abstract: A photoresistor comprises a silicon-on-insulator substrate (101) comprising a device layer (4). In an example embodiment and mode at least two non-contiguous first highly conductive regions (2, 3) of semiconductor material are formed on a surface of the device layer, and at least one active region (1) of a high resistivity semiconductor material of a same conductivity type as the first highly conductive regions are formed to propagate through a whole thickness of the device layer and to electrically contact the at least two non-contiguous first highly conductive regions.

Abstract: A photoresistor comprises a silicon-on-insulator substrate (101) comprising a device layer (4). In an example embodiment and mode at least two non-contiguous first highly conductive regions (2, 3) of semiconductor material are formed on a surface of the device layer, and at least one active region (1) of a high resistivity semiconductor material of a same conductivity type as the first highly conductive regions are formed to propagate through a whole thickness of the device layer and to electrically contact the at least two non-contiguous first highly conductive regions.

Abstract: Back-illuminated, thin photodiode arrays with trench isolation. The trenches are formed on one or both sides of a substrate, and after doping the sides of the trenches, are filled to provide electrical isolation between adjacent photodiodes. Various embodiments of the photodiode arrays and methods of forming such arrays are disclosed.

Abstract: Structures and methods to improve the crosstalk between adjacent pixels of back-illuminated photodiode arrays on a substrate having first and second surfaces, including providing a first matrix of regions of a first conductivity type of a higher conductivity than the substrate extending into the substrate from the first surface and surrounding each photodiode of the array, and providing a second matrix of regions of a first conductivity type of a higher conductivity than the substrate extending into the substrate from the second surface, the second matrix being a mirror image of and aligned with the first matrix, the matrices extending into the substrate less than one half the thickness of the substrate so as to not touch each other. The methods and corresponding structures may be applied to p/n diodes, pin diodes, avalanche photodiodes, photoconductive cells (no p-n junction at all), or similar photosensitive device arrays.

Abstract: Ultra thin photodiode array structures and fabrication methods are disclosed. The back illuminated or front illuminated photodiode arrays have the active portion fabricated in a semiconductor layer which may be bonded to a supporting substrate layer. The active portion of semiconductor layer may comprise epitaxially grown layer. The isolation regions between pixels of an array may span the epitaxial layer and a semiconductor layer. Electrical contacts to the diodes are made through the bonded substrate or a portion of active layer. Methods of fabrication include steps to form a photodiode array of this type as well as steps to bond this array to supporting substrates. In some embodiments, supporting substrates are temporarily bonded for support of the methods of processing.

Abstract: Back-illuminated silicon photomultipliers having a substrate of a first conductivity type having front and back sides, a matrix of regions of a second conductivity type in the substrate, a matrix of regions of the first conductivity type under the matrix of regions of the second conductivity type and adjacent the back side of the substrate, with the bottom of the matrix of regions of the second conductivity type forming a p/n junction with the substrate or a matrix of regions of the second conductivity type, the matrix of regions of the first conductivity type having a higher conductivity than the substrate, a common anode formed by a uniform layer of the first conductivity type of higher conductivity than the substrate on the back side of the substrate. Preferably a plurality of trenches filed with an opaque material are provided in the back side of the substrate, the substrate preferably having a thickness of less than approximately 150 um.

Abstract: This invention describes an imaging system based on an array of semiconductor photosensitive elements with isolating structure between elements (pixels) of the array. The isolated pixels of the array may be photodiodes and they provide excellent imaging capabilities that are important for many applications. The isolated photosensitive pixels may be comprised also by photoconductors, avalanche photodiodes, photosensitive IC, or other similar solid-state devices. The fields of possible application include but are not limited to the detector modules for homeland security, medical imaging systems (CT, SPECT, and PET including), fundamental and applied research, etc.

Abstract: Structures and methods to improve the crosstalk between adjacent pixels of back-illuminated photodiode arrays on a substrate having first and second surfaces, including providing a first matrix of regions of a first conductivity type of a higher conductivity than the substrate extending into the substrate from the first surface and surrounding each photodiode of the array, and providing a second matrix of regions of a first conductivity type of a higher conductivity than the substrate extending into the substrate from the second surface, the second matrix being a mirror image of and aligned with the first matrix, the matrices extending into the substrate less than one half the thickness of the substrate so as to not touch each other. The methods and corresponding structures may be applied to p/n diodes, pin diodes, avalanche photodiodes, photoconductive cells (no p-n junction at all), or similar photosensitive device arrays.

Abstract: Back-illuminated, thin photodiode arrays with trench isolation. The trenches are formed on one or both sides of a substrate, and after doping the sides of the trenches, are filled to provide electrical isolation between adjacent photodiodes. Various embodiments of the photodiode arrays and methods of forming such arrays are disclosed.

Abstract: Ultra thin back-illuminated photodiode array fabrication methods providing backside contact by diffused regions extending through the array substrate. In accordance with the methods, a matrix is diffused into one surface of a substrate, and at a later stage of the substrate processing, the substrate is reduced in thickness and a similar matrix is diffused into the substrate from the other side, this second diffusion being aligned with the first and contacting the first within the substrate. These two contacting matrices provide good electrical contact to a conductive diffusion on the backside for a low resistance contact to the backside. Various embodiments are disclosed.

Abstract: Back-illuminated photo-transistor arrays for computed tomography and other imaging applications. Embodiments are disclosed that use bipolar transistors and JFETs, either with a single photo-sensor and transistor per pixel, or multiple photo-sensors and transistors per pixel.

Abstract: Fast silicon diodes and arrays with high quantum efficiency built on dielectrically isolated wafers. A waveguide is formed in the top surface of the silicon that utilizes total internal reflection from the Si—Si Oxide interface to form an internal mirror. This mirror reflects incoming light into the waveguide cavity, with the light being trapped there by surrounding reflective interfaces. A masking layer may be used to define an input window. Individual diodes or linear arrays may be formed as desired. Some alternate embodiments are described.

Abstract: Ultra thin back-illuminated photodiode array structures and fabrication methods. The photodiode arrays are back illuminated photodiode arrays having a substrate of a first conductivity type having first and second surfaces, the second surface having a layer of the first conductivity type having a greater conductivity than the substrate. The arrays also have a matrix of regions of a first conductivity type of a higher conductivity than the substrate extending from the first surface of the substrate to the layer of the first conductivity type having a greater conductivity than the substrate, a plurality of regions of the second conductivity type interspersed within the matrix of regions of the first conductivity type and not extending to the layer of the first conductivity type on the second surface of the substrate, and a plurality of contacts on the first surface for making electrical contact to the matrix of regions of the first conductivity type and the plurality of regions of the second conductivity type.

Abstract: Ultra thin back-illuminated photodiode array structures and fabrication methods. The photodiode arrays are back illuminated photodiode arrays having a substrate of a first conductivity type having first and second surfaces, the second surface having a layer of the first conductivity type having a greater conductivity than the substrate. The arrays also have a matrix of regions of a first conductivity type of a higher conductivity than the substrate extending from the first surface of the substrate to the layer of the first conductivity type having a greater conductivity than the substrate, a plurality of regions of the second conductivity type interspersed within the matrix of regions of the first conductivity type and not extending to the layer of the first conductivity type on the second surface of the substrate, and a plurality of contacts on the first surface for making electrical contact to the matrix of regions of the first conductivity type and the plurality of regions of the second conductivity type.

Abstract: Ultra thin back-illuminated photodiode array structures and fabrication methods. The photodiode arrays are back illuminated photodiode arrays having a substrate of a first conductivity type having first and second surfaces, the second surface having a layer of the first conductivity type having a greater conductivity than the substrate. The arrays also have a matrix of regions of a first conductivity type of a higher conductivity than the substrate extending from the first surface of the substrate to the layer of the first conductivity type having a greater conductivity than the substrate, a plurality of regions of the second conductivity type interspersed within the matrix of regions of the first conductivity type and not extending to the layer of the first conductivity type on the second surface of the substrate, and a plurality of contacts on the first surface for making electrical contact to the matrix of regions of the first conductivity type and the plurality of regions of the second conductivity type.