Abstract: The present invention relates to a process for preparing a cobalt-containing Fischer-Tropsch synthesis catalyst with good physical properties and high cobalt loading. In one aspect, the present invention provides a process for preparing a supported cobalt-containing Fischer-Tropsch synthesis catalyst, said process comprising the following steps of: (a) impregnating a support powder or granulate with a cobalt-containing compound; (b) calcining the impregnated support powder or granulate and extruding to form an extrudate; or extruding the impregnated support powder or granulate to form an extrudate and calcining the extrudate; and (c) impregnating the calcined product with a cobalt-containing compound; or forming a powder or granulate of the calcined product, impregnating with a cobalt-containing compound and extruding to form an extrudate.

Abstract: A plenum, positioned beneath a first coil and above a window disposed on a top portion of a processing chamber, has side walls and a top surface covering an upper surface of the window and has a first air inlet positioned at a center portion to receive airflow from a first air amplifier. The first air inlet includes holes to distribute the air across the window within the side walls to reduce hotspots at a center portion of the window. The plenum includes a second air inlet at an edge portion of the top surface to receive the airflow from a second air amplifier to reduce hotspots at an edge portion of the window, and a third air inlet between the center and edge portions of the top surface to receive the airflow from a third air amplifier to reduce hotspots at a middle portion of the window.

Abstract: A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

Abstract: A two-dimensional frequency search grid is defined by a first coordinate axis representing an operating frequency setpoint of an RF signal generator in a first operational state and a second coordinate axis representing an operating frequency setpoint of the RF signal generator in a second operational state. The RF signal generator has a first output power level in the first operational state and a second output power level in the second operational state. The RF signal generator operates in an multi-level RF power pulsing mode by cyclically alternating between the first operational state and the second operational state. An automated search process is performed within the two-dimensional frequency search grid to simultaneously determine an optimum value for the operating frequency setpoint of the RF signal generator in the first operational state and an optimum value for the operating frequency setpoint of the RF signal generator in the second operational state.

Abstract: A method is provided, including the following method operations: generating a deuterium plasma, the deuterium plasma including a plurality of energetic deuterium atoms; and directing one or more of the plurality of energetic deuterium atoms to a surface of a substrate, the surface of the substrate having a region of silicon dioxide, the region of silicon dioxide having an underlying silicon layer; wherein the one or more of the plurality of energetic deuterium atoms selectively etch the region of silicon oxide, to the exclusion of the underlying silicon layer.

Abstract: A process for the conversion of a feed comprising a mixture of hydrogen and carbon monoxide to hydrocarbons, the hydrogen and carbon monoxide in the feed being present in a ratio of from 1:9 to 9:1 by volume, the process comprising the step of contacting the feed at elevated temperature and atmospheric or elevated pressure with a catalyst comprising titanium dioxide and co bait wherein the catalyst initially comprises from 30% to 95% metallic cobalt by weight of cobalt.

Abstract: Techniques described and suggested herein include systems and methods for updating, adding, deleting, managing, and otherwise manipulating instance data across multiple virtual instances in an addressable fashion. For example, a customer may control or otherwise be associated with a fleet of virtual instances running on one or more hosts of a computing resource service provider. The described techniques enable customers, or other entities, to update instance data related to arbitrarily defined groups of the fleet using, e.g., tags or other common identifiers, so as to, e.g., alter operational characteristics of some or all of a given fleet of virtual instances without necessitating individual alteration of each instance.

Abstract: A direct drive circuit for providing RF power to a component of a substrate processing system includes a clock generator to generate a clock signal at a first frequency, a gate driver to receive the clock signal and a half bridge circuit. The half bridge circuit includes a first switch with a control terminal connected to the gate driver, a first terminal and a second terminal; a second switch with a control terminal connected to the gate driver, a first terminal connected to the second terminal of the first switch and an output node, and a second terminal; a first DC supply to supply a first voltage to the first terminal of the first switch; and a second DC supply to supply a second voltage to the second terminal of the second switch. The first and the second voltages have opposite polarities and are approximately equal in magnitude.

Abstract: A process for the conversion of a feed comprising a mixture of hydrogen and carbon monoxide to hydrocarbons, the hydrogen and carbon monoxide in the feed being present in a ratio of from 1:9 to 9:1 by volume, the process comprising the step of contacting the feed at elevated temperatures and atmospheric or elevated pressure with a catalyst comprising titanium dioxide and cobalt wherein the catalyst initially comprises from 30% to 95% metallic cobalt by weight of cobalt.

Abstract: Systems and methods for tuning to reduce reflected power in multiple states are described. The methods include determining values of one or more parameters of an impedance matching circuit so that reflected power is reduced for multiple states. Such a reduction in the reflected power increases a life of a radio frequency generator coupled to the impedance matching circuit while simultaneously processing a substrate using the multiple states.

Abstract: A direct drive circuit for providing RF power to a component of a substrate processing system includes a clock generator to generate a clock signal at a first frequency, a gate driver to receive the clock signal and a half bridge circuit. The half bridge circuit includes a first switch with a control terminal connected to the gate driver, a first terminal and a second terminal; a second switch with a control terminal connected to the gate driver, a first terminal connected to the second terminal of the first switch and an output node, and a second terminal; a first DC supply to supply a first voltage to the first terminal of the first switch; and a second DC supply to supply a second voltage to the second terminal of the second switch. The first and the second voltages have opposite polarities and are approximately equal in magnitude.

Abstract: A direct drive circuit for providing RF power to a component of a substrate processing system includes a clock generator to generate a clock signal at a first frequency, a gate driver to receive the clock signal and a half bridge circuit. The half bridge circuit includes a first switch with a control terminal connected to the gate driver, a first terminal and a second terminal; a second switch with a control terminal connected to the gate driver, a first terminal connected to the second terminal of the first switch and an output node, and a second terminal; a first DC supply to supply a first voltage potential to the first terminal of the first switch; and a second DC supply to supply a second voltage potential to the second terminal of the second switch. The first voltage potential and the second voltage potential have opposite polarity and are approximately equal in magnitude.

Abstract: A direct drive circuit for providing RF power to a component of a substrate processing system includes a clock generator to generate a clock signal at a first frequency, a gate driver to receive the clock signal and a half bridge circuit. The half bridge circuit includes a first switch with a control terminal connected to the gate driver, a first terminal and a second terminal; a second switch with a control terminal connected to the gate driver, a first terminal connected to the second terminal of the first switch and an output node, and a second terminal; a first DC supply to supply a first voltage potential to the first terminal of the first switch; and a second DC supply to supply a second voltage potential to the second terminal of the second switch. The first voltage potential and the second voltage potential have opposite polarity and are approximately equal in magnitude.

Abstract: Systems and methods for tuning to reduce reflected power in multiple states are described. The methods include determining values of one or more parameters of an impedance matching circuit so that reflected power is reduced for multiple states. Such a reduction in the reflected power increases a life of a radio frequency generator coupled to the impedance matching circuit while simultaneously processing a substrate using the multiple states.

Abstract: Systems and methods for tuning to reduce reflected power in multiple states are described. The methods include determining values of one or more parameters of an impedance matching circuit so that reflected power is reduced for multiple states. Such a reduction in the reflected power increases a life of a radio frequency generator coupled to the impedance matching circuit while simultaneously processing a substrate using the multiple states.

Abstract: A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

Abstract: A method for etching a layer in a plasma chamber with an inner injection zone gas feed and an outer injection zone gas feed is provided. The layer is placed in the plasma chamber. A pulsed etch gas is provided from the inner injection zone gas feed at a first frequency, wherein flow of pulsed etch gas from the inner injection zone gas feed is ramped down to zero. The pulsed etch gas is provided from the outer injection zone gas feed at the first frequency and simultaneous with and out of phase with the pulsed etch gas from the inner injection zone gas feed. The etch gas is formed into a plasma to etch the layer, simultaneous with the providing the pulsed etch gas from the inner injection zone gas feed and providing the pulsed gas from the outer interjection zone gas feed.

Abstract: An inductively coupled plasma processing apparatus comprises a vacuum chamber, a vacuum source, and a substrate support on which a semiconductor substrate is supported. A ceramic showerhead forms an upper wall of the vacuum chamber. The ceramic showerhead includes a gas plenum in fluid communication with a plurality of showerhead gas outlets for supplying process gas to the interior of the vacuum chamber, and a central opening configured to receive a central gas injector. A central gas injector is disposed in the central opening of the ceramic showerhead. The central gas injector includes a plurality of gas injector outlets for supplying process gas to the interior of the vacuum chamber. An RF energy source energizes the process gas into a plasma state to process the semiconductor substrate. The flow rate of the process gas supplied by the central gas injector and the flow rate of the process gas supplied by the ceramic showerhead can be independently controlled.

Abstract: The present invention relates to a process for preparing a cobalt-containing Fischer-Tropsch synthesis catalyst with good physical properties and high cobalt loading. In one aspect, the present invention provides a process for preparing a supported cobalt-containing Fischer-Tropsch synthesis catalyst, said process comprising the following steps of: (a) impregnating a support powder or granulate with a cobalt-containing compound; (b) calcining the impregnated support powder or granulate and extruding to form an extrudate; or extruding the impregnated support powder or granulate to form an extrudate and calcining the extrudate; and (c) impregnating the calcined product with a cobalt-containing compound; or forming a powder or granulate of the calcined product, impregnating with a cobalt-containing compound and extruding to form an extrudate.

Abstract: An edge ring assembly for a plasma processing chamber is provided, including: an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring in the annular step and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned in the annular step over the annular shelf; and, a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode.