Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An optoelectronic semiconductor component includes a layer stack, a first and second contact means, an electrically conductive edge layer, and a first dielectric layer. The layer stack includes a side surface and a first and a second main surface. The first and second contact means may be arranged at the first and second main surfaces, respectively. Said contact means may electrically contact a first and second semiconductor region of the layer stack, respectively. The second contact means may be radiation-transmissive. The electrically conductive edge layer may be arranged on the layer stack and extend from the second contact means over the side surface as far as the first main surface. The first dielectric layer may be arranged between the edge layer and the layer stack. The second main surface may not be covered by the first dielectric layer.

Abstract: In an embodiment a method includes providing a donor substrate comprising a sacrificial layer, a connecting layer, and a plurality of semiconductor components arranged on the sacrificial layer, the connecting layer at least locally passing fully through the sacrificial layer so that each semiconductor component is at least locally in direct contact with the connecting layer, performing a selection method for identifying defective semiconductor components, selectively applying a cover layer onto a defective semiconductor component, at least one semiconductor component arranged directly adjacent to the defective semiconductor component and an intermediate region located between these semiconductor components, selectively etching the sacrificial layer, wherein the cover layer reduces or avoids etching the sacrificial layer in the intermediate region and removing the semiconductor components from the donor substrate, the defective semiconductor component remaining on the donor substrate.

Abstract: A support structure for receiving planar microchips, comprising a planar support substrate and at least two receiving elements. The receiving elements are connected to the carrier substrate and configured in such a way that they detachably hold a flat microchip between the at least two receiving elements in such a way that the microchip can be moved out with a defined minimum force transversely to a support structure plane.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor body having an n-doped region, a p-doped region optionally comprising a p-type current distribution layer and an active region arranged between the n-doped region and the p-doped region, a first dielectric layer arranged on the p-doped region, a mirror layer arranged on the first dielectric layer, wherein the first dielectric layer electrically insulates the mirror layer from the p-doped region and the n-doped region, a second dielectric layer arranged on the mirror layer, a metallisation layer arranged on the second dielectric layer, wherein the metallisation layer is electrically isolated from the mirror layer and electrically contacts the p-doped region, and an n-type contact layer deposited on the n-doped region opposite the p-doped region.

Abstract: In an embodiment a method includes providing a plurality of optoelectronic semiconductor components on a first carrier, providing a second carrier comprising a contact structure with a plurality of periodically arranged contact surfaces on its top surface, accommodating the plurality of optoelectronic semiconductor components by a transfer unit including placing the transfer unit on a top surface of the optoelectronic semiconductor components opposite to the first carrier, lifting the plurality of optoelectronic semiconductor components from the first carrier, placing a first subset of the plurality of optoelectronic semiconductor components on a first subset of the plurality of periodically arranged contact surfaces and fixing the first subset of the plurality of optoelectronic semiconductor components on the first subset of the plurality of periodically arranged contact surfaces.

Abstract: In an embodiment an adhesive transfer stamp for transferring semiconductor chips includes a volume region including an electrically insulating material, at least one adhesive surface configured to receive a semiconductor chip and an electrically conductive element configured to electrically conductively connected to a ground conductor during operation and to dissipate electrical charges from the semiconductor chip to the ground conductor, wherein the volume region is embodied as a solid body, and wherein the volume region has at least one stepped structure.

Abstract: In an embodiment a component assembly includes a plurality of components, a carrier, wherein the components are secured on the carrier by a connecting layer, wherein, for each component, the connecting layer forms at least one supporting structure at which the connecting layer is adjacent to the component, and a sacrificial layer arranged regionally between the components and the connecting layer, wherein one portion of the components is assigned to a first group, wherein a further portion of the components is assigned to a second group, and wherein the components of the first group are different than the components of the second group in respect of a coverage with the sacrificial layer.

Abstract: In embodiments a method includes providing an optoelectronic semiconductor component on the first carrier, applying a structurable material layer on the at least one optoelectronic semiconductor component, structuring the at least one structurable material layer in such a way that a partial region of the structured material layer on a top surface of the optoelectronic semiconductor component is assigned to the optoelectronic semiconductor component; picking up the optoelectronic semiconductor component by a transfer unit, lifting the optoelectronic semiconductor component off the first carrier, arranging the optoelectronic semiconductor component on a first region of the second carrier, wherein at least a second region adjacent to the first region on the second carrier protrudes the top surface of the optoelectronic semiconductor component and fixing the optoelectronic semiconductor component to the second carrier.

Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence with a bottom side, a bottom coating located on the bottom side and an electrode layer located on an underside of the bottom coating facing away from the semiconductor layer sequence, wherein the bottom coating has a thickness gradient and at least one ridge line at which the bottom coating is thickest, wherein the electrode layer extends over the at least one ridge line such that a contact side of the electrode layer facing away from the semiconductor layer sequence follows the bottom coating true to shape, and wherein an electrical and mechanical contact plane of the contact side parallel to the bottom side is defined by the at least one ridge line.

Abstract: In an embodiment an optoelectronic assembly includes a carrier having at least one contact region, at least one optoelectronic device arranged on the at least one contact region, a beam guiding element having a transparent material, arranged on the carrier, completely encasing the optoelectronic device and at least partially covering surface areas of the optoelectronic device, wherein the beam guiding element sheaths at least three optoelectronic devices and covers the surface areas of the optoelectronic devices, and wherein the optoelectronic devices are configured to generate light of different colors and a transparent conductive layer arranged at the beam guiding element at least in some regions on its surface, wherein the beam guiding element has a recess through which the at least one contact region is exposed on a side of the optoelectronic device facing away from the carrier, and wherein the recess is at least partially filled with a conductive material which is connected to the transparent conductive

Abstract: In an embodiment an optoelectronic semiconductor component includes a layer stack having a side face or a plurality of side faces including a first side region delimiting a first semiconductor region sideways and a second side region partially delimiting a second side region sideways and a first main face and a second main face lying opposite the first main face, the one or more side faces connecting the first main face and the second main face to one another. The component further includes a first contact configured for electrical contacting the first semiconductor region, a second contact configured for the electrical contacting of the second semiconductor region and a dielectric layer arranged between the second contact and the layer stack, wherein the second contact is configured for horizontal current injection into the second semiconductor region.

Abstract: An optoelectronic semiconductor component includes a layer stack, a first and second contact means, an electrically conductive edge layer, and a first dielectric layer. The layer stack includes a side surface and a first and a second main surface. The first and second contact means may be arranged at the first and second main surfaces, respectively. Said contact means may electrically contact a first and second semiconductor region of the layer stack, respectively. The second contact means may be radiation-transmissive. The electrically conductive edge layer may be arranged on the layer stack and extend from the second contact means over the side surface as far as the first main surface. The first dielectric layer may be arranged between the edge layer and the layer stack. The second main surface may not be covered by the first dielectric layer.

Abstract: In an embodiment a component assembly includes a plurality of components, a carrier, wherein the components are secured on the carrier by a connecting layer, wherein, for each component, the connecting layer forms at least one supporting structure at which the connecting layer is adjacent to the component, and a sacrificial layer arranged regionally between the components and the connecting layer, wherein one portion of the components is assigned to a first group, wherein a further portion of the components is assigned to a second group, and wherein the components of the first group are different than the components of the second group in respect of a coverage with the sacrificial layer.

Abstract: In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentration