Patents by Inventor Alexander R. Fox
Alexander R. Fox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240094801Abstract: According to one embodiment, a method, computer system, and computer program product for biometric mixed-reality emotional modification is provided. The present invention may include collecting, by a plurality of biosensors, biometric information on a user during a mixed-reality session, wherein the biometric information comprises biomarkers; identifying, by one or more machine learning models, a mental state of the user based on the biometric information; and responsive to determining that the mental state does not match an intended emotion associated with a mixed-reality experience, modifying the mixed-reality experience with one or more virtual content elements.Type: ApplicationFiled: September 21, 2022Publication date: March 21, 2024Inventors: Jeremy R. Fox, Alexander Reznicek, Bahman Hekmatshoartabari, Martin G. Keen
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Publication number: 20240096012Abstract: In an approach to improve the generation of a virtual object in a three-dimensional virtual environment, embodiments of the present invention identify a virtual object to be generated in a three-dimensional virtual environment based on a natural language utterance. Additionally, embodiments generate the virtual object based on a CLIP-guided Generative Latent Space (CLIP-GLS) analysis, and monitor usage of the generated virtual object in the three-dimensional virtual space. Moreover, embodiments infer human perception data from the monitoring, and generate a utility score for the virtual object based on the human perception data.Type: ApplicationFiled: September 19, 2022Publication date: March 21, 2024Inventors: Jeremy R. Fox, Martin G. Keen, Alexander Reznicek, Bahman Hekmatshoartabari
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Publication number: 20240078809Abstract: Determining contextual relevance of images to automatically generate notifications is provided. An analysis of an image is performed using a set of machine learning models. A context of a current environment of a user captured in the image is determined based on the analysis of the image. A comparison of the context of the current environment of the user is performed against the known information stored in the knowledge corpus. An insight corresponding to the user activity is generated based on the comparison of the context of the current environment of the user against the known information stored in the knowledge corpus. The insight identifies a set of interested parties corresponding to the user who are to be notified and provides proactive assistance to the user to automatically generate a notification in real time. The notification is generated containing the insight corresponding to the user activity.Type: ApplicationFiled: September 6, 2022Publication date: March 7, 2024Inventors: Martin G. Keen, Jeremy R. Fox, Alexander Reznicek, Bahman Hekmatshoartabari
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Patent number: 10825679Abstract: Methods and apparatuses for selectively depositing silicon oxide on surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having hydroxyl-terminated or dielectric surfaces and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma, or water vapor without plasma, to convert the adsorb silicon-containing precursor to form silicon oxide. Some methods also involve exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.Type: GrantFiled: September 18, 2019Date of Patent: November 3, 2020Assignee: Lam Research CorporationInventors: Dennis M. Hausmann, Alexander R. Fox, Colleen Lawlor
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Patent number: 10763108Abstract: Provided are methods for the selective deposition of material on a sidewall surface of a patterned feature. In some embodiments, the methods involve providing a substrate having a feature recessed from a surface of the substrate. The feature has a bottom and a sidewall which extends from the bottom. A conformal film is deposited on the feature using an atomic layer deposition (ALD) process. The conformal film deposited on the bottom is modified by exposing the substrate to directional plasma such that the conformal film on the bottom is less dense than the conformal film on the sidewall. The modified conformal film deposited on the bottom of the feature is preferentially etched. Also provided are methods for the selective deposition on a horizontal surface of a patterned feature.Type: GrantFiled: August 18, 2017Date of Patent: September 1, 2020Assignee: Lam Research CorporationInventors: Dennis M. Hausmann, Alexander R. Fox, David Charles Smith, Bart J. van Schravendijk
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Patent number: 10662526Abstract: A method is provided, including the following operations: simultaneously applying an organosilyl chloride inhibitor and a Lewis base to a surface of a substrate, the organosilyl chloride inhibitor being configured to adsorb onto dielectric regions of the surface of the substrate; performing a plurality of cycles of an ALD process to deposit a metal oxide onto the surface of the substrate; wherein the applying of the organosilyl chloride inhibitor and the Lewis base prevents the ALD process from depositing the metal oxide onto the dielectric regions of the surface of the substrate.Type: GrantFiled: October 2, 2018Date of Patent: May 26, 2020Assignee: Lam Research CorporationInventors: Dennis Hausmann, Alexander R. Fox, Paul C. Lemaire, David Charles Smith
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Patent number: 10643889Abstract: A method of improving selectivity of a metal in a selective deposition process. A pre-treatment process for the metal modifies the metal surface, and includes first reducing the metal to remove organic contamination from the metal followed by oxidation of the metal to allow a monolayer of a metal oxide to grow on the surface. This modification of the metal allows inhibitor molecules to adsorb on the metal oxide monolayer to improve selectivity.Type: GrantFiled: August 6, 2018Date of Patent: May 5, 2020Assignee: Lam Rasearch CorporationInventors: Dennis Hausmann, Elham Mohimi, Pengyi Zhang, Paul C. Lemaire, Kashish Sharma, Alexander R. Fox, Nagraj Shankar, Kapu Sirish Reddy, David Charles Smith
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Publication number: 20200102650Abstract: A method is provided, including the following operations: simultaneously applying an organosilyl chloride inhibitor and a Lewis base to a surface of a substrate, the organosilyl chloride inhibitor being configured to adsorb onto dielectric regions of the surface of the substrate; performing a plurality of cycles of an ALD process to deposit a metal oxide onto the surface of the substrate; wherein the applying of the organosilyl chloride inhibitor and the Lewis base prevents the ALD process from depositing the metal oxide onto the dielectric regions of the surface of the substrate.Type: ApplicationFiled: October 2, 2018Publication date: April 2, 2020Inventors: Dennis Hausmann, Alexander R. Fox, Paul C. Lemaire, David Charles Smith
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Publication number: 20200043776Abstract: A method of improving selectivity of a metal in a selective deposition process. A pre-treatment process for the metal modifies the metal surface, and includes first reducing the metal to remove organic contamination from the metal followed by oxidation of the metal to allow a monolayer of a metal oxide to grow on the surface. This modification of the metal allows inhibitor molecules to adsorb on the metal oxide monolayer to improve selectivity.Type: ApplicationFiled: August 6, 2018Publication date: February 6, 2020Inventors: Dennis HAUSMANN, Elham MOHIMI, Pengyi ZHANG, Paul C. LEMAIRE, Kashish SHARMA, Alexander R. FOX, Nagraj SHANKAR, Kapu Sirish REDDY, David Charles SMITH
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Publication number: 20200040454Abstract: A method of increasing the deposition rate of an atomic layer deposition (ALD) process by co-flowing a volatile base with metal organic, a metal halide, or metal hybride precursor. The base does not react with the precursor with which it is flowed such that the base generates no measurable film on the substrate or particles in the processing chamber during the flow time. The addition of the base catalyst increases the rate of adsorption of the precursor with which it is flowed.Type: ApplicationFiled: August 6, 2018Publication date: February 6, 2020Inventors: Dennis HAUSMANN, Alexander R. FOX, Colleen LAWLOR
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Publication number: 20200013615Abstract: Methods and apparatuses for selectively depositing silicon oxide on surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having hydroxyl-terminated or dielectric surfaces and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma, or water vapor without plasma, to convert the adsorb silicon-containing precursor to form silicon oxide. Some methods also involve exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.Type: ApplicationFiled: September 18, 2019Publication date: January 9, 2020Inventors: Dennis M. Hausmann, Alexander R. Fox, Colleen Lawlor
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Patent number: 10460930Abstract: Methods and apparatuses for selectively depositing silicon oxide on dielectric surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having dielectric and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma to convert the adsorb silicon-containing precursor to form silicon oxide, and exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.Type: GrantFiled: November 22, 2017Date of Patent: October 29, 2019Assignee: Lam Research CorporationInventors: Dennis M. Hausmann, Alexander R. Fox, Colleen Lawlor
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Publication number: 20190157076Abstract: Methods and apparatuses for selectively depositing silicon oxide on dielectric surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having dielectric and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma to convert the adsorb silicon-containing precursor to form silicon oxide, and exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.Type: ApplicationFiled: November 22, 2017Publication date: May 23, 2019Inventors: Dennis M. Hausmann, Alexander R. Fox, Colleen Lawlor
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Patent number: 10240236Abstract: Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.Type: GrantFiled: March 6, 2015Date of Patent: March 26, 2019Assignee: Lam Research CorporationInventors: James Lee, George Andrew Antonelli, Kevin M. McLaughlin, Andrew John McKerrow, Curtis Bailey, Alexander R. Fox, Stephen Lau, Eugene Smargiassi, Casey Holder, Troy Daniel Ribaudo, Xiaolan Chen
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Publication number: 20190057858Abstract: Provided are methods for the selective deposition of material on a sidewall surface of a patterned feature. In some embodiments, the methods involve providing a substrate having a feature recessed from a surface of the substrate. The feature has a bottom and a sidewall which extends from the bottom. A conformal film is deposited on the feature using an atomic layer deposition (ALD) process. The conformal film deposited on the bottom is modified by exposing the substrate to directional plasma such that the conformal film on the bottom is less dense than the conformal film on the sidewall. The modified conformal film deposited on the bottom of the feature is preferentially etched. Also provided are methods for the selective deposition on a horizontal surface of a patterned feature.Type: ApplicationFiled: August 18, 2017Publication date: February 21, 2019Inventors: Dennis M. Hausmann, Alexander R. Fox, David Charles Smith, Bart J. van Schravendijk
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Publication number: 20160258057Abstract: Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.Type: ApplicationFiled: March 6, 2015Publication date: September 8, 2016Inventors: James Lee, George Andrew Antonelli, Kevin M. McLaughlin, Andrew John McKerrow, Curtis Bailey, Alexander R. Fox, Stephen Lau, Eugene Smargiassi, Casey Holder, Troy Daniel Ribaudo, Xiaolan Chen