Abstract: A roll stand for rolling metallic strips includes at least one roll or cylinder which is respectively mounted in a mounting on rolling bearings in the region of its end journals, and at least one distributing device for distributing a lubricant-gas flow. The roll stand according to the invention makes it easily possible in an operationally reliable manner to supply a rolling bearing, provided for mounting a roll or cylinder, with a precisely determined amount of lubricant. This is achieved according to the invention in that a connecting channel for the transport of a lubricant-gas flow to or from the distributing device is molded into the roll or cylinder.

Abstract: A roll stand for rolling metallic strips comprises at least one roll or cylinder which is respectively mounted in a mounting on rolling bearings in the region of its end journals, and at least one distributing device for distributing a lubricant-gas flow. The roll stand according to the invention makes it easily possible in an operationally reliable manner to supply a rolling bearing, provided for mounting a roll or cylinder, with a precisely determined amount of lubricant. This is achieved according to the invention in that a connecting channel for the transport of a lubricant-gas flow to or from the distributing device is molded into the roll or cylinder.

Abstract: In a method of contacting terminals, a substrate having a first terminal and a second terminal is provided, a terminal surface of the first terminal being located at a shorter distance from a substrate surface than a surface of the second terminal. A first insulating layer, in which a contact via is formed for exposing the terminal surface of the first terminal, is formed on the substrate surface. The contact via is filled with a conductive material, and a second insulating layer is formed on the first insulating layer and on the contact via filled with the conductive material. Using an etching mask, a first recess for exposing the conductive material filling the contact via, and a second recess are etched through the second and first insulating layers for exposing the second terminal surface. A conductive material for producing first and second contact terminals is introduced into the first and second recesses.

Abstract: In a method of contacting terminals, a substrate having a first terminal and a second terminal is provided, a terminal surface of the first terminal being located at a shorter distance from a substrate surface than a surface of the second terminal. A first insulating layer, in which a contact via is formed for exposing the terminal surface of the first terminal, is formed on the substrate surface. The contact via is filled with a conductive material, and a second insulating layer is formed on the first insulating layer and on the contact via filled with the conductive material. Using an etching mask, a first recess for exposing the conductive material filling the contact via, and a second recess are etched through the second and first insulating layers for exposing the second terminal surface. A conductive material for producing first and second contact terminals is introduced into the first and second recesses.

Abstract: A method for producing a semiconductor structure including preparing a semiconductor substrate, and generating a lower first, a middle second and an upper third masking layer on a surface of the semiconductor substrate. The method further includes forming at least one first window in the upper third masking layer, structuring the middle second masking layer using the first window for transferring the first window, structuring the lower first masking layer using the first window for transferring the first window, and enlarging the first window to form a second window. The method for further includes restructuring the middle second masking layer using the second window for transferring the second window, structuring the semiconductor substrate, using the structured lower third masking layer, restructuring the lower first masking layer using the second window, and restructuring the semiconductor substrate using the restructured lower third masking layer.

Abstract: Disclosed is a method for fabricating a contract hole plane in a memory module with an arrangement of memory cells each having a selection transistor. The methods can be utilized during the production of dynamic random access memory (DRAM) modules.

Abstract: A method for producing a semiconductor structure including preparing a semiconductor substrate, and generating a lower first, a middle second and an upper third masking layer on a surface of the semiconductor substrate. The method further includes forming at least one first window in the upper third masking layer, structuring the middle second masking layer using the first window for transferring the first window, structuring the lower first masking layer using the first window for transferring the first window, and enlarging the first window to form a second window. The method for further includes restructuring the middle second masking layer using the second window for transferring the second window, structuring the semiconductor substrate, using the structured lower third masking layer, restructuring the lower first masking layer using the second window, and restructuring the semiconductor substrate using the restructured lower third masking layer.

Abstract: The invention relates to a process for the production of a semiconductor apparatus, in which an etch step is carried out after an exposure step using light having a wavelength of 193 nm and a development step, the etch gas used containing an added reactive monomer. As a result, polymerization of the surface and hence sidewall passivation of the photoresist used are achieved.

Abstract: In order to fabricate a contact hole plane in a memory module with an arrangement of memory cells each having a selection transistor, on a semiconductor substrate with an arrangement of mutually adjacent gate electrode tracks on the semiconductor surface, an insulator layer is formed on the semiconductor surface and a sacrificial layer is subsequently formed on the insulator layer, then material plugs are produced on the sacrificial layer for the purpose of defining contact openings between the mutually adjacent gate electrode tracks, the sacrificial layer is etched to form material plugs with the underlying sacrificial layer blocks, after the production of the vitreous layer with uncovering of the sacrificial layer blocks above the contact openings between the mutually adjacent gate electrode tracks, an essentially planar surface being formed, then the sacrificial layer material is etched out from the vitreous layer and the uncovered insulator material is removed above the contact openings on the semiconduct

Abstract: In a method of contacting terminals, a substrate having a first terminal and a second terminal is provided, a terminal surface of the first terminal being located at a shorter distance from a substrate surface than a surface of the second terminal. A first insulating layer, in which a contact via is formed for exposing the terminal surface of the first terminal, is formed on the substrate surface. The contact via is filled with a conductive material, and a second insulating layer is formed on the first insulating layer and on the contact via filled with the conductive material. Using an etching mask, a first recess for exposing the conductive material filling the contact via, and a second recess are etched through the second and first insulating layers for exposing the second terminal surface. A conductive material for producing first and second contact terminals is introduced into the first and second recesses.

Abstract: A solid particulate metallocene-containing catalyst system is produced by combining an alkenyl substituted indenyl (t-butylamido)dimethyl silane titanium dichloride half sandwich metallocene in which the alkenyl substituent on the indenyl has terminal olefinic unsaturation and 5 to 6 carbon atoms with a suitable cocatalyst in a liquid and conducting prepolymerization of at least one olefin, optionally in multiple steps, to produce a prepolymerized solid catalyst, and separating the resulting solid from the liquid and the components dissolved in the liquid, said solid being the inventive solid particulate metallocene catalyst system. The use of the solid particulate catalyst in the polymerization of olefins is also disclosed.

Abstract: A device for distributing an oil-air mixture to various lubrication channels disposed in a bore (10) of a machine housing, comprises at least one cylindrical distributor (1) which is sealed on at least one of its front sides (8) towards the bore wall by a sealing ring (7) and whose axial position in the bore (10) is determined by at least one spacer (2), whereby the distributor (1) and the spacer (2) are introduced individually into the bore (10).

Abstract: A device for distributing an oil-air mixture to various lubrication channels disposed in a bore (10) of a machine housing, comprises at least one cylindrical distributor (1) which is sealed on at least one of its front sides (8) towards the bore wall by a sealing ring (7) and whose axial position in the bore (10) is determined by at least one spacer (2), whereby the distributor (1) and the spacer (2) are introduced individually into the bore (10).

Abstract: An apparatus for subdividing a viscous liquid conveyed by a gas flow into a plurality of component flows has first and second connecting elements aligned within a tubular casing. The first connecting element has an inflow bore which branches into a number of discharge bores. The inflow bore discharges into a distributing chamber which widens along the direction of flow. The distributing chamber terminates in a rebound face which is aligned concentrically with the inflow bore. The rebound face has inlet openings along a periphery thereof which lead into the discharge bores, which carry the component flows. The first and second connecting elements and tubular casing may be mounted on a body.