Abstract: A doped organic semiconductor is produced using the method of providing an organic semiconductor solution, contacting the organic semiconductor solution with CO2; and irradiating the organic semiconductor solution with ultraviolet light. A composition is described, the composition comprising an organic semiconductor; and a metal salt having the formula M+X? wherein X? is a monoanionic species; and wherein the ratio of M+ to X? in the hole transport material is less than about 1.00. An additional composition is described, the composition comprising an organic semiconductor; a metal salt having the formula M+X? wherein X? is a monoanionic species; and a metal carbonate; wherein the total metal content of the composition is approximately equal to the X? content of the composition.

Abstract: The invention relates to a light apparatus (1) for generating light. The light apparatus includes a light emission structure (2) including light emission material (9), a capacitor structure (3) including at least two capacitor electrode films (11, 12) and a dielectric film (14) between the capacitor electrode films, and a film encapsulation (30) including at least one film for encapsulating and thereby protecting at least the light emission material. The capacitor structure is integrated in the light apparatus such that the capacitor electrode films and the dielectric film are at least partly arranged in parallel to the light emission structure. Since films, in particular, thin films, are used for the capacitor structure and the encapsulation and since the capacitor structure is integrated in the light apparatus, the light apparatus can be relatively thin.

Abstract: The invention relates to a light apparatus (1) for generating light. The light apparatus comprises a light emission structure (2) including light emission material (9), a capacitor structure (3) including at least two capacitor electrode films (11, 12) and a dielectric film (14) between the capacitor electrode films, and a film encapsulation (30) including at least one film for encapsulating and thereby protecting at least the light emission material. The capacitor structure is integrated in the light apparatus such that the capacitor electrode films and the dielectric film are at least partly arranged in parallel to the light emission structure. Since films, in particular, thin films, are used for the capacitor structure and the encapsulation and since the capacitor structure is integrated in the light apparatus, the light apparatus can be relatively thin.