Abstract: A lock for holding a first part to a second part comprises a holding body with a receptacle for receiving a protruding part of the second part. The holding body has a wall that borders the receptacle and a locking element, the locking element having a protrusion, whereby the locking element has a first position, whereby in the first position the protrusion is in a locking position, whereby in the locking position the protrusion protrudes from the wall into the receptacle by a first amount and the locking element has a second position, whereby in the second position the protrusion is in a release position, whereby in the release position the protrusion either protrudes from the wall into the receptacle by a second amount, whereby the second amount is smaller than the first amount, or the protrusion does not protrude from the wall.

Abstract: A lock for holding a first part to a second part comprises a holding body with a receptacle for receiving a protruding part of the second part. The holding body having has a wall that borders the receptacle and a locking element, the locking element having a protrusion, whereby the locking element has a first position, whereby in the first position the protrusion is in a locking position, whereby in the locking position the protrusion protrudes from the wall into the receptacle by a first amount and the locking element has a second position, whereby in the second position the protrusion is in a release position, whereby in the release position the protrusion either protrudes from the wall into the receptacle by a second amount, whereby the second amount is smaller than the first amount, or the protrusion does not protrude from the wall.

Abstract: In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by a chemical vapor deposition process. A layer of an oxidizable metal is deposited over the layer of silicon. The layer of silicon and the layer of the oxidizable metal are subsequently oxidized to form a layer of silicon oxide and metal oxide.