Abstract: An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.

Abstract: An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.

Abstract: A system for extending the life of a repeller in an IHC ion source is disclosed. The system includes an IHC ion source wherein the back surface of the repeller has been shaped to reduce the possibility of electrical shorts. The separation distance between the back surface of the repeller and the chamber wall behind the repeller is increased along its outer edge, as compared to the separation distance near the center of the repeller. This separation distance reduces the possibility that deposited material will flake and short the repeller to the chamber wall. Further, in certain embodiments, the separation distance between the back surface of the repeller and the chamber wall near the center of the repeller is unchanged, so as to minimize the flow of gas that exits from the chamber. The back surface of the repeller may be tapered, stepped or arced to achieve these criteria.

Abstract: An IHC ion source with multiple configurations is disclosed. For example, an IHC ion source comprises a chamber, having at least one electrically conductive wall, and a cathode and a repeller disposed on opposite ends of the chamber. Electrodes are disposed on one or more walls of the ion source. Bias voltages are applied to at least one of the cathode, repeller and the electrodes, relative to the electrically conductive wall of the chamber. Further, the IHC ion source comprises a configuration circuit, which receives the various voltages as input voltages, and provides selected output voltages to the cathode, repeller and electrodes, based on user input. In this way, the IHC ion source can be readily reconfigured for different applications without rewiring the power supplies, as is currently done. This configuration circuit may be utilized with other types of ion sources as well.

Abstract: An indirectly heated cathode ion source having a cylindrical housing with two open ends is disclosed. The cathode and repeller are sized to fit within the two open ends. These components may be inserted into the open ends, creating a small radial spacing that provides electrical isolation between the cylindrical housing and the cathode and repeller. In another embodiment, the repeller may be disposed from the end of the cylindrical housing creating a small axial spacing. In another embodiment, insulators are used to hold the cathode and repeller in place. This design results in a reduced distance between the cathode column and the extraction aperture, which may be beneficial to the generation of ion beams of certain species.

Abstract: An indirectly heated cathode ion source having a cylindrical housing with two open ends is disclosed. The cathode and repeller are sized to fit within the two open ends. These components may be inserted into the open ends, creating a small radial spacing that provides electrical isolation between the cylindrical housing and the cathode and repeller. In another embodiment, the repeller may be disposed from the end of the cylindrical housing creating a small axial spacing. In another embodiment, insulators are used to hold the cathode and repeller in place. This design results in a reduced distance between the cathode column and the extraction aperture, which may be beneficial to the generation of ion beams of certain species.

Abstract: A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed.

Abstract: A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed.

Abstract: An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.

Abstract: An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.

Abstract: The IHC ion source comprises an ion source chamber having a cathode and a repeller on opposite ends. The repeller is made of two discrete parts, each comprising a different material. The repeller includes a repeller head, which may be a disc shaped component, and a stem to support the head. The repeller head is made from a conductive material having a higher thermal conductivity than the stem. In this way, the temperature of the repeller head is maintained at a higher temperature than would otherwise be possible. The higher temperature limits the build-up of material on the repeller head, which improves the performance of the IHC ion source. In certain embodiments, the repeller head and the stem are connected using a press fit. Differences in the coefficient of thermal expansion of the repeller head and the stem may cause the press fit to become tighter at higher temperatures.

Abstract: The IHC ion source comprises an ion source chamber having a cathode and a repeller on opposite ends. The repeller is made of two discrete parts, each comprising a different material. The repeller includes a repeller head, which may be a disc shaped component, and a stem to support the head. The repeller head is made from a conductive material having a higher thermal conductivity than the stem. In this way, the temperature of the repeller head is maintained at a higher temperature than would otherwise be possible. The higher temperature limits the build-up of material on the repeller head, which improves the performance of the IHC ion source. In certain embodiments, the repeller head and the stem are connected using a press fit. Differences in the coefficient of thermal expansion of the repeller head and the stem may cause the press fit to become tighter at higher temperatures.

Abstract: An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.

Abstract: A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.

Abstract: An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.

Abstract: An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.

Abstract: An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper. The wiper is positioned within the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A cleaning sub-assembly for an ion source includes a wiper configured to be positioned within an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.

Abstract: A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.

Abstract: Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.

Abstract: In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.