Abstract: Implementations include receiving, by a semantic translation service of a ML platform, an output data set from a ML model, the output data set including a predicted value and a set of metrics, determining, by the semantic translation service, a numerical value based on at least two or more metrics in the set of metrics, selecting, by the semantic translation service, a semantic result by mapping the numerical value to a projection including two or more semantic values, and transmitting, by the ML platform, a prediction result at least partially including the semantic result for selective display to a user using one or more user interfaces (UIs).

Abstract: A heat extraction assembly or apparatus includes a cooling cassette and a component coupled to a top surface of the cooling cassette. The cooling cassette may include an inlet, an outlet, and a cooling cavity disposed within the top surface of the cooling cassette. The cooling cavity may be in fluid communication with inlet and the outlet. The component may be coupled to the top surface of the cooling cassette proximate to the cooling cavity such that the component at least partially defines a boundary of the cooling cavity. Coolant flowing through the cooling cassette from the inlet to the outlet may directly contact the component at the cooling cavity in order to provide a cooling effect to regulate a temperature of the component.

Abstract: Implementations include receiving, by a semantic translation service of a ML platform, an output data set from a ML model, the output data set including a predicted value and a set of metrics, determining, by the semantic translation service, a numerical value based on at least two or more metrics in the set of metrics, selecting, by the semantic translation service, a semantic result by mapping the numerical value to a projection including two or more semantic values, and transmitting, by the ML platform, a prediction result at least partially including the semantic result for selective display to a user using one or more user interfaces (UIs).

Abstract: In accordance with an embodiment, a method of driving a switching transistor includes driving the switching transistor with a gate drive signal; measuring at least one of a derivative of a load path voltage and a derivative of a load path current of the switching transistor; measuring a derivative of the gate drive signal; forming an error signal based on a reference signal, a measured derivative of the gate drive signal, and at least one of the measured derivative of the load path voltage of the switching transistor or the measured derivative of the load path current of the switching transistor; and forming the gate drive signal, where forming the gate drive signal includes processing the error signal using a dynamic controller.

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.

Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

Abstract: An integrated circuit including a semiconductor arrangement, a power semiconductor component and an associated production method is disclosed. One embodiment includes a carrier substrate, a first interconnect layer, formed on the carrier substrate and has at least one cutout, an insulating filling layer, formed on the first interconnect layer and the carrier substrate and fills at least one cutout, an SiON layer, formed on the filling layer, and a second interconnect layer, formed over the SiON layer.

Abstract: An integrated circuit including a semiconductor arrangement, a power semiconductor component and an associated production method is disclosed. One embodiment includes a carrier substrate, a first interconnect layer, formed on the carrier substrate and has at least one cutout, an insulating filling layer, formed on the first interconnect layer and the carrier substrate and fills at least one cutout, an SiON layer, formed on the filling layer, and a second interconnect layer, formed over the SiON layer.

Abstract: A method for cleaning silicon-containing deposits in process chamber is described. Fluorine-containing compounds and additional compounds are used for the cleaning. The deposits are removed using a cleaning gas contains fluorine-containing compounds, at least 50% of which have more than one carbon atom and are C4F8 or C2F6 molecules, and additional compounds, at least 50% of which have at least one oxygen atom and at least 50% are N2O molecules. A pressure in the chamber is between 266 Pa and 665 Pa. The method permits economical and environmentally friendly cleaning of the process chamber.