Patents by Inventor Alexander Simin

Alexander Simin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11923877
    Abstract: An antenna switch circuit and an antenna circuit switching method. The circuit includes an antenna port, a termination port (e.g., for disposal of power reflected back from an antenna and received through the antenna port in a transmit mode), and a receive port (e.g., for receiving a signal from the antenna port via the antenna switch circuit in a receive mode). The circuit also includes a first switch coupled between the antenna port and the termination port. The circuit further includes a resonant inductance coupled between the receive port and the node located between the antenna port and the first switch. The circuit also includes a second switch coupled between a reference potential and a node located between the resonant inductance and the receive port.
    Type: Grant
    Filed: April 22, 2022
    Date of Patent: March 5, 2024
    Assignee: NXP B.V.
    Inventors: Gian Hoogzaad, Jozef Reinerus Maria Bergervoet, Alexander Simin
  • Publication number: 20220352908
    Abstract: An antenna switch circuit and an antenna circuit switching method. The circuit includes an antenna port, a termination port (e.g., for disposal of power reflected back from an antenna and received through the antenna port in a transmit mode), and a receive port (e.g., for receiving a signal from the antenna port via the antenna switch circuit in a receive mode). The circuit also includes a first switch coupled between the antenna port and the termination port. The circuit further includes a resonant inductance coupled between the receive port and the node located between the antenna port and the first switch. The circuit also includes a second switch coupled between a reference potential and a node located between the resonant inductance and the receive port.
    Type: Application
    Filed: April 22, 2022
    Publication date: November 3, 2022
    Inventors: Gian Hoogzaad, Jozef Reinerus Maria Bergervoet, Alexander Simin
  • Publication number: 20220329214
    Abstract: A protection circuit and method for protecting driven circuitry against voltage peaks in a radio frequency signal, “VRF”, past a predetermined voltage level “Vdetect”. The protection circuit includes an input for receiving the radio frequency signal. The protection circuit also includes at least one amplification stage coupled to the input. The amplification stage is operable to produce an amplified signal based on Vdetect?VRF. The protection circuit further includes a hold circuit operable to determine, from the amplified signal produced by the amplification stage, whether a peak voltage Vpeak of the radio frequency signal exceeds Vdetect. The hold circuit is operable to output a first detection value if Vpeak exceeds Vdetect. The hold circuit is operable to output a second detection value if Vpeak does not exceed Vdetect. The protection circuit also includes a latch circuit operable to latch the detection value outputted by the hold circuit.
    Type: Application
    Filed: April 5, 2022
    Publication date: October 13, 2022
    Inventors: Marc Gerardus Maria Stegers, Gian Hoogzaad, Alexander Simin
  • Patent number: 9419563
    Abstract: A two-stage RF amplifier is provided. The first stage is a common-emitter transistor arrangement with a purely reactive degeneration impedance and an output impedance with a reactive component matched in frequency response to the degeneration impedance. The second stage is a buffer amplifier. The first amplifier can be designed for high gain which is flat over frequency by virtue of the reactive degeneration impedance. The first amplifier provides input matching, and the buffer provides output matching, with decoupling between the input and output.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: August 16, 2016
    Assignee: NXP B.V.
    Inventors: Gian Hoogzaad, Alexander Simin, Hasan Gui
  • Publication number: 20150123732
    Abstract: A two-stage RF amplifier is provided. The first stage is a common-emitter transistor arrangement with a purely reactive degeneration impedance and an output impedance with a reactive component matched in frequency response to the degeneration impedance. The second stage is a buffer amplifier. The first amplifier can be designed for high gain which is flat over frequency by virtue of the reactive degeneration impedance. The first amplifier provides input matching, and the buffer provides output matching, with decoupling between the input and output.
    Type: Application
    Filed: October 30, 2014
    Publication date: May 7, 2015
    Inventors: Gian Hoogzaad, Alexander Simin, Hasan Gui