Abstract: A scheduler system obtains a basic model of a manufacturing process for the production of one or more products. The basic model is based on a first set of data collected at a point in time from a plurality of tools used to manufacture the one or more products. The system incorporates a second set of data, which is collected from the plurality of tools after the first set of data, into the basic model to generate a comprehensive model of the manufacturing process. The second set of data reflects a current state of a factory. The system evaluates a plurality of scheduling policies using the comprehensive model and selects an optimal scheduling policy from the plurality of scheduling policies based on the comprehensive process model evaluation to achieve a manufacturing objective.

Abstract: Recipe steps of a manufacturing process run that generated a fault are displayed in a current view of a user interface, the recipe steps being displayed in association with a first axis. At least one of measured parameters or calculated parameters of the manufacturing process run are displayed in the current view, where at least one of the measured parameters and the calculated parameters are displayed in association with a second axis. A plurality of intersections of the recipe steps with at least one of the measured parameters or the calculated parameters are displayed in the current view, each of the plurality of intersections including a representation of a fault contribution attributable to at least one of a distinct measured parameter or a distinct calculated parameter at a distinct recipe step.

Abstract: Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. The invention adjusts the frequency and/or spatial resolution of measurements on an as-needed basis when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.

Abstract: Methods and apparatuses for presenting multivariate fault contributions in a user interface are described. A user interface is provided to illustrate a fault for a sample manufactured by a process containing multiple variables, each having at least two components. The user interface presents one group of components of the multiple variables in a first axis and a second group of components of the multiple variables in a second axis and graphically illustrates contributions to the fault associated with the multiple variables by associating a contribution of each component in the one group of components of the multiple variables to each corresponding component in the second group of components of the multiple variables.

Abstract: Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. The invention adjusts the frequency and/or spatial resolution of measurements on an as-needed basis when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.

Abstract: Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. A sampling plan provides information on specific measure points within a die, a die being the section on the wafer that will eventually become a single chip after processing. There are specified points within the die that are candidates for measuring. The stored die map information may be retrieved and translated to determine the available points for measurement on the wafer. The invention adjusts the frequency and/or spatial resolution of measurements when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The increase in measurements and possible corresponding decrease in processing occur on an as-needed basis.

Abstract: A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. The method includes the steps of identifying one or more input parameters that cause a change in output characteristics, defining global nodes using estimated maximum and minimum values of the input parameters, and defining a mathematical equation that calculates a predicted output characteristic for each node. The method also includes the steps of receiving at least one empirical data point having one or more input parameter values and at least one empirical output value and adjusting the predicted output values at the nodes based on a difference between the at least one empirical output value and the predicted output characteristic calculated using the mathematical equation based on the one or more input parameter values.

Abstract: A method and apparatus for diagnosing faults. A fault is detected. One or more process variables that contributed to the fault are determined. A relative contribution of each of the one or more process variables is determined. A determination is made as to which fault signatures match the fault, a match occurring when the relative contributions of the one or more process variables are within relative contribution ranges of the matching fault signature. Each fault signature is associated with at least one fault class.

Abstract: A method and apparatus for detecting faults. A set of data samples is received, the set of data samples including multiple process variables. One or more multivariate statistical models are adapted, wherein adapting includes applying a change to at least one univariate statistic of the one or more multivariate statistical models if the change is greater than a threshold value. The one or more multivariate statistical models are used to analyze subsequent process data to detect faults.

Abstract: In one embodiment, a method for predicting yield during the design stage includes receiving defectivity data identifying defects associated with previous wafer designs, and dividing the defects into systematic defects and random defects. For each design layout of a new wafer design, yield is predicted separately for the systematic defects and the random defects. A combined yield is then calculated based on the yield predicted for the systematic defects and the yield predicted for the random defects.

Abstract: Embodiments of the present invention provide methods and apparatuses for determining factors for design consideration in yield analysis of semiconductor fabrication. In one embodiment, a computer-implemented method for determining factors for design consideration in yield analysis of semiconductor fabrication includes obtaining a geometric characteristic of a defect on a chip and obtaining design data of the chip, where the design data is associated with the defect. The method further includes determining a criticality factor of the defect based on the geometric characteristic and the design data, and outputting the criticality factor.

Abstract: In one embodiment, a method for predicting yield includes calculating a criticality factor (CF) for each of a plurality of defects detected in an inspection process step of a wafer, and determining a yield-loss contribution of the inspection process step to the final yield based on CFs of the plurality of defects and the yield model built for a relevant design. The yield-loss contribution of the inspection process step is then used to predict the final yield for the wafer.

Abstract: In one embodiment, an inline defect analysis method includes receiving geometric characteristics of individual defects and design data corresponding to the individual defects, determining which of the individual defects are likely to be nuisance defects using the geometric characteristics and the corresponding design data, and refraining from sampling the defects that are likely to be nuisance defects.

Abstract: Recipe steps of a manufacturing process run that generated a fault are displayed in a current view of a user interface, the recipe steps being displayed in association with a first axis. At least one of measured parameters or calculated parameters of the manufacturing process run are displayed in the current view, where at least one of the measured parameters and the calculated parameters are displayed in association with a second axis. A plurality of intersections of the recipe steps with at least one of the measured parameters or the calculated parameters are displayed in the current view, each of the plurality of intersections including a representation of a fault contribution attributable to at least one of a distinct measured parameter or a distinct calculated parameter at a distinct recipe step.

Abstract: A method and apparatus for diagnosing faults. Process data is analyzed using a first metric to identify a fault. The process data was obtained from a manufacturing machine running a first recipe. A fault signature that matches the fault is identified. The identified fault signature was generated using a second metric and/or a second recipe. At least one fault class that is associated with the fault signature is identified.

Abstract: Methods and apparatuses for presenting multivariate fault contributions in a user interface are described. A user interface is provided to illustrate a fault for a sample manufactured by a process containing multiple variables, each having at least two components. The user interface presents one group of components of the multiple variables in a first axis and a second group of components of the multiple variables in a second axis and graphically illustrates contributions to the fault associated with the multiple variables by associating a contribution of each component in the one group of components of the multiple variables to each corresponding component in the second group of components of the multiple variables.

Abstract: A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. The method includes the steps of identifying one or more input parameters that cause a change in output characteristics, defining global nodes using estimated maximum and minimum values of the input parameters, and defining a mathematical equation that calculates a predicted output characteristic for each node. The method also includes the steps of receiving at least one empirical data point having one or more input parameter values and at least one empirical output value and adjusting the predicted output values at the nodes based on a difference between the at least one empirical output value and the predicted output characteristic calculated using the mathematical equation based on the one or more input parameter values.

Abstract: Process data is analyzed, the process data having been generated during a manufacturing process to detect a fault. One or more process variables of the manufacturing process that contributed to the fault are determined. A relative contribution of each of the one or more process variables to the fault is determined. A fault signature having relative contribution ranges for at least one of the one or more process variables is generated, the relative contribution ranges based on the determined relative contributions.

Abstract: A method for monitoring performance of an advanced process control system for at least one process output includes calculating a variance of a prediction error for a processing performance and/or a probability for violating specification limits of the processing performance of the at least one process output. If the variance of the prediction error is calculated, the method also includes calculating a model health index. If the probability for violating specification limits is calculated, the method further includes calculating a process health index.

Abstract: Semiconductor wafers are processed in conjunction with a manufacturing execution system using a run-to-run controller and a fault detection system. A recipe is received from the manufacturing execution system by the run-to-run controller for controlling a tool. The recipe includes a setpoint for obtaining one or more target wafer properties. Processing of the wafers is monitored by measuring processing attributes including fault conditions and wafer properties using the fault detection system and one or more sensors. Setpoints of the recipe may be modified at the run-to-run controller according to the processing attributes to maintain the target wafer properties, except in cases when a fault condition is detected by the fault detection system. Thus, data acquired in the presence of tool or wafer fault conditions are not used for feedback purposes. In addition, fault detection models may be used to define a range of conditions indicative of a fault condition.