Abstract: The invention relates to a radiation-emitting semiconductor chip comprising a semiconductor layer sequence having at least two active regions which generate electromagnetic radiation during operation and at least one reflective outer surface which is arranged to the side of each active region wherein the reflective outer surface includes an angle of at least 35° and at most 55° with a main extension plane of the semiconductor chip. The invention also relates to a method for producing a radiation-emitting semiconductor chip.

Abstract: A light-emitting diode (LED) device can include a mesa with a sidewall encompassing a first semiconductor layer, a second semiconductor layer, and an active region between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are oppositely doped. The active region includes a quantum well. The LED device can further include at least one epitaxial layer grown over the sidewall of the mesa. The at least one epitaxial layer comprises a semiconductor material having a wider bandgap than a semiconductor material of the quantum well and is configured to induce compressive or tensile strain in the quantum well. The compressive or tensile strain causes a bandgap of a peripheral portion of the quantum well to differ from a bandgap of a central portion of the quantum well, thereby tuning an emission profile (e.g., wavelength and/or intensity) of the LED device.

Abstract: Described are LED devices and corresponding manufacturing techniques. In some embodiments, an LED device includes a first doped semiconductor layer, a second doped semiconductor layer having an opposite doping, and a two-dimensional (2D) array of light emitting cells. Each light emitting cell corresponds to a mesa of an individual pixel and includes at least one quantum well. The 2D array is located between the first doped semiconductor layer and the second doped semiconductor layer. The LED device further includes a flattening layer between the first doped semiconductor layer and the 2D array. The flattening layer comprises an undoped quantum barrier (QB) layer that completely covers sidewalls of each light emitting cell in the 2D array. The undoped QB layer quantum mechanically isolates the light emitting cells from each other. The flattening or undoped QB layer may also protect the light emitting cells against etch-induced defects during a mesa pixelation process.

Abstract: A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.

Abstract: A light source includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the p-type semiconductor layer and the n-type semiconductor layer and configured to emit light. The active region includes a plurality of barrier layers and one or more quantum well layers. The one or more quantum well layers include at least one quantum well layer that is doped with both n-type dopants and p-type dopants. A net carrier concentration of the at least one quantum well layer is between about 1×1017 /cm3 and about 10×1017 /cm3. The n-type dopants include, for example, Si, Ge, S, Se, or Te. The p-type dopants include, for example, C, Mg, Be, or Zn. The active region is characterized by a lateral linear dimension equal to or less than about 10 µm.

Abstract: A micro-light emitting diode includes a mesa structure that includes a first set of one or more semiconductor layers, an active layer configured to emit light, a second set of one or more semiconductor layers on the active layer, and a dielectric layer in sidewall regions of the mesa structure. A center region of the second set of one or more semiconductor layers is thicker than a sidewall region of the second set of one or more semiconductor layers, such that a distance from a surface of the sidewall region of the second set of one or more semiconductor layers to the active layer is less than a distance from a surface of the center region of the second set of one or more semiconductor layers to the active layer, thereby forming a surface potential-induced lateral potential barrier at a sidewall region of the active layer.

Abstract: A micro-light emitting diode includes a semiconductor mesa structure that includes at least a portion of an n-type semiconductor layer, an active region configured to emit visible light, and a p-type semiconductor layer. The micro-LED device also includes an insulator layer that includes an undoped semiconductor passivation layer grown on sidewalls of the semiconductor mesa structure, and a dielectric passivation layer characterized by a refractive index lower than a refractive index of the undoped semiconductor passivation layer. The micro-LED device further includes a reflective metal layer deposited on the dielectric passivation layer, and a micro-lens configured to collimate the visible light emitted by the active region, where a ratio between a width of the micro-lens and a width of the active region may be greater than about 1.5.

Abstract: LED devices and corresponding techniques for manufacturing LED devices are described. In some embodiments, an LED device includes a plurality of mesas, each mesa corresponding to a separate LED and including a layered semiconductor structure. The layered semiconductor structure includes an active region and a quantum barrier (QB) layer. The active region has a matrix of quantum well (QW) cells that are quantum mechanically isolated by the QB layer. In particular, the QB layer can include ridge-shaped structures that laterally separate adjacent QW cells. The matrix of QW cells can be arranged as a two-dimensional array. In some embodiments, the QW cells are epitaxially grown such that each QW cell is thicker along a central region and thinner along a peripheral region, with the peripheral region corresponding to where the QW cell meets a ridge-shaped structure of the QB layer.

Abstract: A red light-emitting micro-LED wafer includes a silicon substrate, a GaP buffer layer grown on the silicon substrate, a first doped (e.g., p-doped) GaP contact layer on the GaP buffer layer, an active region, and a second doped (e.g., n-doped) GaP contact layer on the active region. The active region includes a plurality of InGaP quantum barrier layers and one or more InGaAsP quantum well layers, where each of the one or more InGaAsP quantum well layers is sandwiched by two InGaP barrier layers of the plurality of InGaP barrier layers and is configured to emit red light. In some embodiments, the red light-emitting micro-LED wafer also includes a first doped AlGaP cladding layer between the first doped GaP contact layer and the active region, and a second doped AlGaP cladding layer between the second doped GaP contact layer and the active region.

Abstract: A micro-light emitting diode (micro-LED) wafer includes a substrate, an n-type semiconductor layer grown on the substrate, an active region grown on the n-type semiconductor layer and configured to emit visible light, and a p-type semiconductor layer grown on the active region. The active region includes a compressive-strained quantum well layer and compressive-strained quantum barrier layers. At least one of the p-type semiconductor layer or the n-type semiconductor layer includes a tensile-strained layer having a thickness greater than about 50 nm, such that the tensile-strained layers can counter the compressive strain of the active region, thereby reducing the overall strain and bow of the micro-LED wafer.

Abstract: In an embodiment an optoelectronic device includes an epitaxial layer stack having at least a first epitaxial layer and a second epitaxial layer arranged above the first epitaxial layer, wherein the following layers are embedded in the epitaxial layer stack a first semiconductor layer of a first conductivity type, an active layer arranged above the first semiconductor layer and configured to generate light, and a second semiconductor layer of a second conductivity type arranged above the active layer, wherein an interface between the first epitaxial layer and the second epitaxial layer extends at least partially through the first semiconductor layer and/or the second semiconductor layer, and wherein the active layer is embedded in a non-doped barrier layer, the barrier layer covering one or more side surfaces of the active layer.

Abstract: A micro-light emitting diode includes a mesa structure that includes a first set of one or more semiconductor layers, an active layer configured to emit light, a second set of one or more semiconductor layers on the active layer, and a dielectric layer in sidewall regions of the mesa structure. A center region of the second set of one or more semiconductor layers is thicker than a sidewall region of the second set of one or more semiconductor layers, such that a distance from a surface of the sidewall region of the second set of one or more semiconductor layers to the active layer is less than a distance from a surface of the center region of the second set of one or more semiconductor layers to the active layer, thereby forming a surface potential-induced lateral potential barrier at a sidewall region of the active layer.

Abstract: A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.

Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

Abstract: In one embodiment, the invention relates to an optoelectronic semiconductor chip comprising a semiconductor layer sequence. The semiconductor layer sequence has an n-conducting first layer region, a p-conducting second layer region and an active zone lying therebetween for generating radiation. The second layer region comprises a first subregion directly adjacent to the active zone, the first subregion being composed of p-conducting InvAl1?vP. The second layer region also comprises a second subregion directly adjacent to the first subregion, the second subregion having p-conducting Iny(GaxAl1?x)1?yP. The second layer region also comprises a third subregion as a p-contact layer directly adjacent to the second subregion.

Abstract: A light-emitting semiconductor device (100) comprising a semiconductor layer sequence (1) based on a phosphide and/or arsenide compound semiconductor material system is specified, wherein—the semiconductor layer sequence (1) comprises a light-emitting semiconductor layer (10), which is embodied to emit light during operation of the semiconductor device (100), between a first cladding layer (11) and a second cladding layer (12), and at least a first semiconductor protection layer (13), the first semiconductor protection layer (13) is arranged inside the first cladding layer (11), wherein the first cladding layer is formed as an outer layer, or the first semiconductor protection layer is arranged as an outer layer directly on the first cladding layer (11) on a side remote from the light-emitting semiconductor layer (10), and the first semiconductor protection layer (13) has a lower aluminum content than the first cladding layer.

Abstract: A micro-light emitting diode (micro-LED) includes a substrate, an n-type semiconductor layer on the substrate, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer and configured to emit red light. The active region includes a barrier layer characterized by a first lattice constant, and a quantum well layer next to the barrier layer. The quantum well layer is characterized by a second lattice constant greater than the first lattice constant and by an in-plane compressive strain. The active region has a lateral linear dimension equal to or less than about 10 ?m.

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 ?m.

Abstract: An optoelectronic semiconductor device comprises an active zone comprising sub-layers for forming a quantum well structure. Differences in energy levels of the quantum well structure are smaller in a central region of the optoelectronic semiconductor device than in an edge region of the optoelectronic semiconductor device. According to further embodiments, an optoelectronic semiconductor device comprises an active zone comprising a sub-layer which is suitable for forming a quantum well structure. In the active zone, quantum dot structures are formed in a central region of the optoelectronic semiconductor device. No quantum dot structures are formed in an edge region of the optoelectronic semiconductor device.

Abstract: The invention relates to a radiation-emitting semiconductor chip comprising a semiconductor layer sequence having at least two active regions which generate electromagnetic radiation during operation and at least one reflective outer surface which is arranged to the side of each active region wherein the reflective outer surface includes an angle of at least 35° and at most 55° with a main extension plane of the semiconductor chip. The invention also relates to a method for producing a radiation-emitting semiconductor chip.