Abstract: A data storage device includes a set of latches, read/write circuitry, a memory, and an interleaver. The set of latches is configured to receive data. The read/write circuitry is coupled to the set of latches. The memory is coupled to the read/write circuitry. The interleaver is configured to interleave the data and to cause the read/write circuitry to program the interleaved data to the memory. The set of latches, the read/write circuitry, the memory, and the interleaver are integrated within a common die.

Abstract: A data storage device includes a set of latches, read/write circuitry, a memory, and an interleaver. The set of latches is configured to receive data. The read/write circuitry is coupled to the set of latches. The memory is coupled to the read/write circuitry. The interleaver is configured to interleave the data and to cause the read/write circuitry to program the interleaved data to the memory. The set of latches, the read/write circuitry, the memory, and the interleaver are integrated within a common die.

Abstract: A compact and versatile high speed sense amplifier suitable for use in non-volatile memory circuits is presented. The sense amp includes a latch, which is connected to a data bus, and bit line selection circuitry by which it can selectively be connected to one or more bit lines. The sense amp also includes some intermediate circuitry having a first node connectable to a selected bit line through the bit line selection circuitry and a second node that is connectable to the latch circuit. The sense amp can include switches where the second node can be connected to either the value held in the latch or the inverse of the value held in the latch. The sense amp can also include a switch where an internal node of the sense amp can be connected directly to a voltage supply level.

Abstract: A compact and versatile high speed sense amplifier suitable for use in non-volatile memory circuits is presented. The sense amp includes a latch, which is connected to a data bus, and bit line selection circuitry by which it can selectively be connected to one or more bit lines. The sense amp also includes some intermediate circuitry having a first node connectable to a selected bit line through the bit line selection circuitry and a second node that is connectable to the latch circuit. The sense amp can include switches where the second node can be connected to either the value held in the latch or the inverse of the value held in the latch. The sense amp can also include a switch where an internal node of the sense amp can be connected directly to a voltage supply level.