Patents by Inventor Alexander Weigl
Alexander Weigl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240128719Abstract: A method for producing a semiconductor component for emitting light includes providing a base body, the base body comprising an active layer for generating the light and a tunnel contact, and forming a stop structure by implantation in a region of the tunnel contact. The stop structure delimits the tunnel contact and serves to constrict a current introduced into the active layer. Defects due to crystal imperfections are generated by the implantation so that the implanted region is transparent for the light having an emitted wavelength.Type: ApplicationFiled: December 27, 2023Publication date: April 18, 2024Inventors: Roman Koerner, Alexander Weigl, Holger Joachim Moench, Berthold Schmidt
-
Patent number: 11916583Abstract: A supply system for at least one orthopedic technology component, which has at least one electronic and/or electrical device and has a supply connection and/or a radio device for receiving data and/or electrical energy. The supply system also includes a holder for the orthopedic technology component, which has a supply device, and which is compatible with the supply connection and/or the radio device, for supplying the orthopedic technology component with data and/or energy. The invention further relates to a system consisting of a supply system and an orthopedic technology device, and to a method for supplying the system with data and/or energy.Type: GrantFiled: December 18, 2018Date of Patent: February 27, 2024Assignee: OTTO BOCK HEALTHCARE PRODUCTS GMBHInventors: Alexander Pappe, Andreas Weigl-Pollack, Erik Albrecht-Laatsch, Michael Nolte, Robert Hoffmann, Robert Kaitan, Luis Sagmeister, Thomas Pauser, Andreas Schramel
-
Patent number: 11862933Abstract: A method of forming an electrical metal contact within a semiconductor layer stack of a vertical cavity surface emitting laser includes forming a contact hole into the semiconductor layer stack. The contact hole has a bottom and a side wall extending from the bottom. The method further includes providing a photoresist mask inside the contact hole. The photoresist mask covers the side wall of the contact hole and has an opening extending to the bottom of the contact hole. The method additionally includes wet-chemical isotropic etching the bottom of the contact hole, depositing a metal on the bottom of the contact hole, and removing the photoresist mask so that the metal on the bottom of the contact hole is left as the electrical metal contact.Type: GrantFiled: March 17, 2021Date of Patent: January 2, 2024Assignee: TRUMPF PHOTONIC COMPONENTS GMBHInventors: Roman Koerner, Alexander Weigl
-
Publication number: 20220376479Abstract: A semiconductor device comprising an array of vertical cavity surface emitting lasers (VCSELs). The semiconductor device includes a first VCSEL having a first active area, a second VCSEL having a second active area, and a bridge connecting the first VCSEL and the second VCSEL. The first active area of the first VCSEL and the second active area of the second VCSEL are arranged along a first crystal axis. The semiconductor device further includes a blocking structure arranged between the first VCSEL and the second VCSEL. the blocking structure is configured to block a propagation of a defect between the first VCSEL and the second VCSEL along the first crystal axis.Type: ApplicationFiled: May 11, 2022Publication date: November 24, 2022Inventors: Alexander Weigl, Armand Pruijmboom
-
Publication number: 20210296853Abstract: A method of forming an electrical metal contact within a semiconductor layer stack of a vertical cavity surface emitting laser includes forming a contact hole into the semiconductor layer stack. The contact hole has a bottom and a side wall extending from the bottom. The method further includes providing a photoresist mask inside the contact hole. The photoresist mask covers the side wall of the contact hole and has an opening extending to the bottom of the contact hole. The method additionally includes wet-chemical isotropic etching the bottom of the contact hole, depositing a metal on the bottom of the contact hole, and removing the photoresist mask so that the metal on the bottom of the contact hole is left as the electrical metal contact.Type: ApplicationFiled: March 17, 2021Publication date: September 23, 2021Inventors: Roman Koerner, Alexander Weigl
-
Publication number: 20210104867Abstract: A VCSEL array has VCSEL sub-arrays having VCSELs on a substrate. The sub-arrays are electrically contacted by a first electrical contact arrangement common to the VCSELs within a respective sub-array and a second electrical contact arrangement. The second electrical contact arrangement has second electrical contacts contacting a respective VCSEL within the respective sub-array, individually. The second electrical contacts each has a second metal-semiconductor interface to a second semiconductor layer of an associated VCSEL. The second electrical contacts pump the VCSEL along a current path to the first electrical contact arrangement. Current paths between the first electrical contact arrangement and the second electrical contacts via the VCSELs have a symmetry selected out of the group of rotation symmetry, mirror symmetry, and translation symmetry. The first electrical contact arrangement and the second electrical contact arrangement are arranged on the same side of the substrate.Type: ApplicationFiled: December 16, 2020Publication date: April 8, 2021Inventors: Alexander Weigl, Stephan Gronenborn, Holger Joachim Moench
-
Patent number: 10707646Abstract: The invention describes a laser device comprising between two and six mesas (120) provided on one semiconductor chip (110), wherein the mesas (120) are electrically connected in parallel such that the mesas (120) are adapted to emit laser light if a defined threshold voltage is provided to the mesas (120). Two to six mesas (120) with reduced active diameter in comparison to a laser device with one mesa improve the yield and performance despite of the fact that two to six mesas need more area on the semiconductor chip thus increasing the total size of the semiconductor chip (110). The invention further describes a method of marking semiconductor chips (110). A functional layer of the semiconductor chip (110) is provided and structured in a way that a single semiconductor chip (110) can be uniquely identified by means of optical detection of the structured functional layer. The structured layer enables identification of small semiconductor chips (110) with a size below 200 ?m×200 ?m.Type: GrantFiled: October 18, 2018Date of Patent: July 7, 2020Assignee: TRUMPF PHOTONIC COMPONENTS GMBHInventors: Philipp Henning Gerlach, Alexander Weigl
-
Publication number: 20190052048Abstract: The invention describes a laser device comprising between two and six mesas (120) provided on one semiconductor chip (110), wherein the mesas (120) are electrically connected in parallel such that the mesas (120) are adapted to emit laser light if a defined threshold voltage is provided to the mesas (120). Two to six mesas (120) with reduced active diameter in comparison to a laser device with one mesa improve the yield and performance despite of the fact that two to six mesas need more area on the semiconductor chip thus increasing the total size of the semiconductor chip (110). The invention further describes a method of marking semiconductor chips (110). A functional layer of the semiconductor chip (110) is provided and structured in a way that a single semiconductor chip (110) can be uniquely identified by means of optical detection of the structured functional layer. The structured layer enables identification of small semiconductor chips (110) with a size below 200 ?m×200 ?m.Type: ApplicationFiled: October 18, 2018Publication date: February 14, 2019Inventors: PHILIPP HENNING GERLACH, ALEXANDER WEIGL
-
Patent number: 10181701Abstract: The invention describes a laser device (100) comprising between two and six mesas (120) provided on one semiconductor chip (110), wherein the mesas (120) are electrically connected in parallel. The laser device (100) is adapted such that degradation of at least one mesa (120) results in a decreased laser power emitted by the laser device (100) in a defined solid angle when driven at the defined electrical input power. The laser device (100) is adapted such that eye safety of the laser device (100) is guaranteed during life time of the laser device (100). Eye safety may be guaranteed by designing the semiconductor structure or more general layer structure of mesas (120) of the laser device (100) in a way that degradation of one or more layers of the layer structure results in a reduction of the maximum optical power emitted in a defined solid angle.Type: GrantFiled: March 29, 2016Date of Patent: January 15, 2019Assignee: KONINKLIJKE PHILIPS N.V.Inventors: Holger Moench, Alexander Weigl, Philipp Henning Gerlach
-
Patent number: 10116119Abstract: The invention describes a laser device comprising between two and six mesas (120) provided on one semiconductor chip (110), wherein the mesas (120) are electrically connected in parallel such that the mesas (120) are adapted to emit laser light if a defined threshold voltage is provided to the mesas (120). Two to six mesas (120) with reduced active diameter in comparison to a laser device with one mesa improve the yield and performance despite of the fact that two to six mesas need more area on the semiconductor chip thus increasing the total size of the semiconductor chip (110). The invention further describes a method of marking semiconductor chips (110). A functional layer of the semiconductor chip (110) is provided and structured in a way that a single semiconductor chip (110) can be uniquely identified by means of optical detection of the structured functional layer. The structured layer enables identification of small semiconductor chips (110) with a size below 200 ?m×200 ?m.Type: GrantFiled: October 14, 2014Date of Patent: October 30, 2018Assignee: KONINKLIJKE PHILIPS N.V.Inventors: Philipp Henning Gerlach, Alexander Weigl
-
Publication number: 20180076598Abstract: The invention describes a laser device (100) comprising between two and six mesas (120) provided on one semiconductor chip (110), wherein the mesas (120) are electrically connected in parallel. The laser device (100) is adapted such that degradation of at least one mesa (120) results in a decreased laser power emitted by the laser device (100) in a defined solid angle when driven at the defined electrical input power. The laser device (100) is adapted such that eye safety of the laser device (100) is guaranteed during life time of the laser device (100). Eye safety may be guaranteed by designing the semiconductor structure or more general layer structure of mesas (120) of the laser device (100) in a way that degradation of one or more layers of the layer structure results in a reduction of the maximum optical power emitted in a defined solid angle.Type: ApplicationFiled: March 29, 2016Publication date: March 15, 2018Inventors: HOLGER MOENCH, ALEXANDER WEIGL, PHILIPP HENNING GERLACH
-
Patent number: 9627854Abstract: The present invention relates to a laser device being formed of at least one VCSEL (15) with intracavity contacts. The VCSEL comprises a layer structure (18) with an active region (6) between a first DBR (4) and a second DBR (10), a first current-injection layer (5) of a first conductivity type between the first DBR (4) and the active region (6), and a second current-injection layer (8) of a second conductivity type between the second DBR (10) and the active region (6). The first and second current-injection layers (5, 8) are in contact with a first and a second metallic contact (11, 12), respectively. The first and/or second DBR (4, 10) are formed of alternating Aluminum oxide and Al(x)Ga(1?x)As containing layers. The proposed design of this VCSEL allows an increased efficiency and lower production costs of such a laser since the top and bottom DBRs may be formed of a considerable reduced thickness.Type: GrantFiled: July 1, 2013Date of Patent: April 18, 2017Assignee: KONINKLIJKE PHILIPS N.V.Inventors: Philipp Henning Gerlach, Alexander Weigl, Christian Wimmer
-
Publication number: 20160254640Abstract: The invention describes a laser device comprising between two and six mesas (120) provided on one semiconductor chip (110), wherein the mesas (120) are electrically connected in parallel such that the mesas (120) are adapted to emit laser light if a defined threshold voltage is provided to the mesas (120). Two to six mesas (120) with reduced active diameter in comparison to a laser device with one mesa improve the yield and performance despite of the fact that two to six mesas need more area on the semiconductor chip thus increasing the total size of the semiconductor chip (110). The invention further describes a method of marking semiconductor chips (110). A functional layer of the semiconductor chip (110) is provided and structured in a way that a single semiconductor chip (110) can be uniquely identified by means of optical detection of the structured functional layer. The structured layer enables identification of small semiconductor chips (110) with a size below 200 ?m×200 ?m.Type: ApplicationFiled: October 14, 2014Publication date: September 1, 2016Inventors: PHILIPP HENNING GERLACH, ALEXANDER WEIGL
-
Publication number: 20150139260Abstract: The present invention relates to a laser device being formed of at least one VCSEL (15) with intracavity contacts. The VCSEL comprises a layer structure (18) with an active region (6) between a first DBR (4) and a second DBR (10), a first current-injection layer (5) of a first conductivity type between the first DBR (4) and the active region (6), and a second current-injection layer (8) of a second conductivity type between the second DBR (10) and the active region (6). The first and second current-injection layers (5, 8) are in contact with a first and a second metallic contact (11, 12), respectively. The first and/or second DBR (4, 10) are formed of alternating Aluminum oxide and Al(x)Ga(1?x)As containing layers. The proposed design of this VCSEL allows an increased efficiency and lower production costs of such a laser since the top and bottom DBRs may be formed of a considerable reduced thickness.Type: ApplicationFiled: July 1, 2013Publication date: May 21, 2015Inventors: Philipp Henning Gerlach, Alexander Weigl, Christian Wimmer