Abstract: A load sensor compares generated values of load signals to predicted values of the load signals. Where an error between a generated value and a predicted value is less than a threshold, a value of zero is transmitted by the load sensor to an external systems, in an encoded stream of bits, and the error are used to calculate a predicated value of a next load signal, such that insubstantial changes in loading resulting in small errors are not transmitted to the external system. Where an error between the generated value and the predicted value exceeds the threshold, however, a value representative of the error is transmitted to the external system, in an encoded stream of bits. The external system processes the stream of bits to calculate the error, to determine that an item has been placed on a storage system or removed therefrom, or to identify the item.

Abstract: A single photon avalanche diode (SPAD) device comprises: a silicon layer; an active region in said silicon layer for detecting incident light; and a blocking structure overlapping said active region for blocking incident light having a wavelength at least in the range of 200 nm to 400 nm, so that light having said wavelength can only be detected by said SPAD device when incident upon a region of said silicon layer outside of said active region.

Abstract: A light sensitive semiconductor structure comprises: a substrate; a doped upper region of said substrate having a first type of doping; a first implant region located below and being in direct contact with said doped upper region, said first implant region having a second type of doping so that a pn-junction is located between said doped upper region and said first implant region; and a second implant region located below said first implant region and having said second type of doping, and wherein a peak in a doping profile of said second type of doping is located in said second implant region.

Abstract: A semiconductor imaging apparatus including a light detection device in a silicon substrate, an optical filter arranged to filter light incident on the light detection device and including a gap for allowing unfiltered light to reach the silicon substrate, an isolation structure for stopping light generated charge carriers in the silicon substrate from reaching the light detection device, and a photodiode for detecting the charge carriers.

Abstract: A semiconductor structure for measuring a breakdown voltage of a pn-junction, said semiconductor structure comprises: a substrate; a sensor device comprising an optical active region comprising said pn-junction in said substrate, wherein said sensor device is configured to apply a reverse bias voltage to said pn-junction; and an emitter located adjacent to said optical active region in said substrate and configured to provide charge carriers to said optical active region in order to trigger breakdown of said pn-junction when said reverse bias voltage is equal to or greater than said breakdown voltage.

Abstract: An optical sensor in an integrated Complementary Metal Oxide Semiconductor, CMOS, device, the sensor including a sensor element with an optical active region and a CMOS backend stack including one or more layers. The sensor further includes an optical lens formed in a layer of the one or more layers and arranged to direct light incident upon it towards the sensor element.

Abstract: A single photon avalanche diode (SPAD) device comprises: a silicon layer; an active region in said silicon layer for detecting incident light; and a blocking structure overlapping said active region for blocking incident light having a wavelength at least in the range of 200 nm to 400 nm, so that light having said wavelength can only be detected by said SPAD device when incident upon a region of said silicon layer outside of said active region.

Abstract: An optical sensor in an integrated Complementary Metal Oxide Semiconductor, CMOS, device, the sensor including a sensor element with an optical active region and a CMOS backend stack including one or more layers. The sensor further includes an optical lens formed in a layer of the one or more layers and arranged to direct light incident upon it towards the sensor element.

Abstract: A method of manufacturing a photodiode device comprises providing a stacked photodiode device. The stacked photodiode device comprises a substrate having a first conductivity type, a first well having a second conductivity type, within the substrate, and a second well having the first conductivity type, within the first well. The stacked photodiode device is modified by implanting a multiplication implant within the first well, so as to manufacture an avalanche photodiode device. A photodiode device comprising one or more stacked photodiodes and one or more avalanche photodiodes may be manufactured by providing two or more stacked photodiodes and modifying at least one of the stacked photodiodes by implanting a multiplication implant.