Abstract: The inventive method relates to microelectronic and consists in the application of an emission layer to elements of an addressable field-emission electrode with the aid of a gas-phase synthesis method in a hydrogen flow accompanied by a supply of a carbonaceous gas. A dielectric backing is made of a high-temperature resistant material and discrete elements of the addressable field-emission electrode are made of a high-temperature resistant metal. The growth rate of the emission layer on the dielectric backing is smaller than the growth rate of the emission layer on the metallic discrete elements as a result of a selected process of depositing the carbonaceous emission layer, namely the backing temperature, the temperature of the reactor threads, the pumping speed of a gas mixture through the reactor, a selected distance between the reactor threads and the backing and a settling time. The cathode metallic discrete elements can be made of two metallic layers.

Abstract: The invention relates to flat panel display terminals based on cold emission cathodes. The aim of said invention is to develop a full color processing display terminal using a cold emission cathode having high emission characteristics. The inventive cold emission film cathode comprises an insulated substrate which can be made of glass and a nanocrystalline carbon film emitter placed on it, said emitter is embodied in the form of a mono layer of grains of powder of a high temperature resistive material having a grain size ranging from 10?9 to 10?4 m, said grains being covered with a nanocrystalline carbon film. The inventive flat display terminal comprises flat glass plates on one of which a system of cold emission cathodes is arranged, said cathodes are embodied in a form of busbars coated with the mono layer of grains of powder of high temperature resistive material having a grain size ranging from 10?9 to 10?4 m which are covered with a nanocrystalline carbon film.

Abstract: The invention relates to flat panel display terminals based on cold emission cathodes.

Abstract: The inventive method relates to microelectronic and consists in the application of an emission layer to elements of an addressable field-emission electrode with the aid of a gas-phase synthesis method in a hydrogen flow accompanied by a supply of a carbonaceous gas. A dielectric backing is made of a high-temperature resistant metal. The growth rate of the emission layer on the dielectric backing is smaller than the growth rate of the emission layer on the metallic discrete elements as a result of a selected process of depositing the carbonaceous emission layer. For producing a display structure, a control grid is obtained from the metal layer having an emission threshold higher than a field density at which the cathode emits the required current. The inventive method enables to avoid operations of removing the emission layer making it possible to produce flat displays having high characteristics in addition to high performance and low cost.

Abstract: The present invention may be used in the production of highly efficient films for electron field emitters. The cold-emission cathode of the present invention comprises a substrate having a carbon film with an irregular structure applied thereon. This structure comprises carbon micro- and nano-ridges and/or micro- and nano-threads which are perpendicular to the surface of the substrate, which have a typical size of between 0.005 and 1 micron as well as a distribution density of between 0.1 and 100 &mgr;m−2, and which are coated with a diamond nano-film whose thickness represents a fraction of a micron. The method for producing the cathode involves sequentially depositing two carbon films. A carbon film with nano-barbs is first deposited on a substrate arranged on an anode by igniting a direct-current discharge at a density of between 0.15 and 0.5 A.