Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes ?20 ?m and a mean grain diameter d50?5 ?m.

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes?20 ?m and a mean grain diameter d50?5 ?m.

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes ?20 ?m and a mean grain diameter d50?5 ?m.

Abstract: The invention describes two methods of fabricating semiconductor components in which a luminescence conversion element is applied directly to the semiconductor body (1). In the first method, a suspension (4) containing a bonding agent and at least one luminescent material (5) is applied to the semiconductor body (1) in layers. In the next step the solvent escapes, leaving only the luminescent material (5) with the bonding agent on the semiconductor body. In the second method, the semiconductor body (1) is provided with a layer (6) of bonding agent to which the luminescent material (5) is applied directly.

Abstract: A radiation-emitting semiconductor component, comprising a semiconductor body which emits a primary light, a luminescent conversion element which emits fluorescent light, in which the luminescent conversion element comprises a suspension of a luminous substance in a matrix material, wherein the luminescent conversion element is in direct contact with a part of the surface of said semiconductor body, and wherein the fluorescent light emitted from said luminescent conversion element is approximately half the total emission of the light of the radiation-emitting semiconductor component.

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes ?20 ?m and a mean grain diameter d50?5 ?m.

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes ?20 ?m and a mean grain diameter d50 ?5 ?m.

Abstract: The invention proposes an arrangement of luminescent materials for excitation by means of a radiation source and involving the use of a luminescent material having a Ce-activated garnet structure A3B5O12, in which the first component A contains at least one element from the group consisting of Y, Lu, Sc, La, Gd, Sm and Tb and the second component B represents at least one of the elements Al, Ga and In, and a plurality of the luminescent materials are mixed together.

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a phosphorous group of the general formula A3B5X12:M, and the luminous substance pigments have particle sizes ?20 ?m and a mean grain diameter d50?5 ?m.

Abstract: A radiation-emitting semiconductor component, comprising a semiconductor body which emits a primary light, a luminescent conversion element which emits fluorescent light, in which the luminescent conversion element comprises a suspension of a luminous substance in a matrix material, wherein the luminescent conversion element is in direct contact with a part of the surface of said semiconductor body, and wherein the fluorescent light emitted from said luminescent conversion element is approximately half the total emission of the light of the radiation-emitting semiconductor component.

Abstract: The invention proposes an arrangement of luminescent materials for excitation by means of a radiation source and involving the use of a luminescent material having a Ce-activated garnet structure A3B5O12, in which the first component A contains at least one element from the group consisting of Y, Lu, Se, La, Gd, Sm and Tb and the second component B represents at least one of the elements Al, Ga and In, and a plurality of the luminescent materials are mixed together. An associated wavelength-converting casting compound and an associated light-source arrangement are further proposed.

Abstract: A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A is terbium or terbium together with at least one of the elements Y, Gd, La and/or Lu. In a preferred embodiment, a phosphor having a garnet of structure (Tb1?x?yRExCEy)3(Al,Ga)5O12, where RE=Y, Gd, La and/or Lu; 0?x?0.5?y; 0<y<0.1 is used.

Abstract: The invention describes a radiation-emmitting semiconductor component with luminescence conversion element (7), in the case of which the semiconductor body (3) is arranged in a recess in the basic body (1). Within the recess, there is shaped around the semiconductor body a bowl-like region which contains the luminescence conversion element (7) and envelopes the semiconductor body (3). The bowl-like region is formed as a depression within the recess or as an annular enclosure (6) on the base of the recess.

Abstract: A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A is terbium or terbium together with at least one of the elements Y, Gd, La and/or Lu. In a preferred embodiment, a phosphor having a garnet of structure (Tb1-x-yRExCey)3(Al,Ga)5O12, where RE=Y, Gd, La and/or Lu; 0?x?0.5?y; 0<y<0.1 is used.

Abstract: The invention proposes an arrangement of luminescent materials for excitation by means of a radiation source and involving the use of a luminescent material having a Ce-activated garnet structure A3B5O12, in which the first component A contains at least one element from the group consisting of Y, Lu, S, La, Gd, Sm and Tb and the second component B represents at least one of the elements Al, Ga and In, and a plurality of the luminescent materials are mixed together.

Abstract: A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A is terbium or terbium together with at least one of the elements Y, Gd, La and/or Lu. In a preferred embodiment, a phosphor having a garnet of structure (Tb1-x-yRExCey)3(Al,Ga)5O12, where RE=Y, Gd, La and/or Lu; 0?x?0.5-y; 0<y<0.1 is used.

Abstract: The invention proposes an arrangement of luminescent materials for excitation by means of a radiation source and involving the use of a luminescent material having a Ce-activated garnet structure A3B5O12, in which the first component A contains at least one element from the group consisting of Y, Lu, Sc, La, Gd, Sm and Tb and the second component B represents at least one of the elements Al, Ga and In, and a plurality of the luminescent materials are mixed together.

Abstract: The invention describes two methods of fabricating semiconductor components in which a luminescence conversion element is applied directly to the semiconductor body (1). In the first method, a suspension (4) containing a bonding agent and at least one luminescent material (5) is applied to the semiconductor body (1) in layers. In the next step the solvent escapes, leaving only the luminescent material (5) with the bonding agent on the semiconductor body. In the second method, the semiconductor body (1) is provided with a layer (6) of bonding agent to which the luminescent material (5) is applied directly.

Abstract: A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A is terbium or terbium together with at least one of the elements Y, Gd, La and/or Lu. In a preferred embodiment, a phosphor having a garnet of structure (Tb1-x-yRExCey)3(Al,Ga)5O12, where RE=Y, Gd, La and/or Lu; 0?x?0.5-y; 0<y<0.1 is used.

Abstract: The invention describes a radiation-emitting semiconductor component with a luminescent conversion element, at which the semiconductor body is placed in a recess of the base body. A cup-like area is molded inside of the recess around the semiconductor body, which contains the luminescent conversion element and coats the semiconductor body. The cup-like portion is formed as indentation inside of the recess or as annular border on the base of the recess.