Abstract: A micromirror arrangement (1)having: at least one micromirror (3) having a reflective surface (11) formed at a mirror substrate (2), and an antireflective coating (7) formed at the mirror substrate (2) outside the reflective surface (11). A reflective coating (8) is formed within the reflective surface (11) and has at least two layer subsystems, wherein the first layer subsystem has layers (8e, 8f) composed of a periodic sequence of alternate high and low refractive index layers composed of a nonmetallic material and is optimized with regard to the reflectivity in respect of a used wavelength of the micromirror arrangement, and wherein the second layer subsystem is optimized with regard to the reflectivity in respect of a measurement wavelength of the micromirror arrangement, said measurement wavelength deviating from the used wavelength.

Abstract: An optical element (14) transparent for radiation with a wavelength ? in the ultraviolet wavelength range below 250 nm, in particular at 193 nm, comprises a substrate (17) with a refractive index ns larger than 1.6, and an antireflection coating (16) formed on at least part of the surface of the substrate (17) between the substrate (17) and an ambient medium with a refractive index nA, preferably with nA=1.0. The antireflection coating (16) consists of a single layer of a material with a refractive index nL of about nL=?{square root over (nAnS)}, in particular nL>1.3, and the optical thickness dL of the single layer is about ?/4. The optical element (14) is preferably part of a projection objective (5) in a microlithography projection exposure apparatus (1) and located adjacent to a light-sensitive substrate (10).

Abstract: An optical element (14) transparent for radiation with a wavelength ? in the ultraviolet wavelength range below 250 nm, in particular at 193 nm, comprises a substrate (17) with a refractive index nS larger than 1.6, and an antireflection coating (16) formed on at least part of the surface of the substrate (17) between the substrate (17) and an ambient medium with a refractive index nA, preferably with nA=1.0. The antireflection coating (16) consists of a single layer of a material with a refractive index nL of about nL=?{square root over (nAnS)}, in particular nL>1.3, and the optical thickness dL of the single layer is about ?/4. The optical element (14) is preferably part of a projection objective (5) in a microlithography projection exposure apparatus (1) and located adjacent to a light-sensitive substrate (10).

Abstract: The disclosure relates to a microlithographic projection exposure apparatus, such as are used for the production of large-scale integrated electrical circuits and other microstructured components. The disclosure relates in particular to coatings of optical elements in order to increase or reduce the reflectivity.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus, as well as related components and methods. In some embodiments, a microlithographic projection exposure apparatus includes an illumination system and a projection objective, where the illumination system can illuminate an object plane of the projection objective and the projection objective can produce the image of the object plane on an image plane. A polarization-dependent transmission can be produced in the illumination system such that, for at least one polarization distribution in respect of the light impinging on the object plane, a non-homogeneous intensity distribution in the object plane is obtained. The non-homogeneous intensity distribution can afford a homogeneous intensity distribution in the image plane by virtue of polarization-dependent transmission properties of the projection objective.

Abstract: An optical element (1a, 1b) for reflecting UV radiation at an operating wavelength below 250 nm, preferably at 193 nm, which has a substrate (2a, 2b), a reflective layer (3a, 3b) made of aluminum superimposed on the substrate (2a, 2b). The reflective aluminum layer (3a, 3b) is not transparent to UV radiation and is (111)-plane oriented. The reflective optical element (1a, 1b) has a reflectivity of more than 85%, preferably of more than 88%, and even more preferably of more than 92%, in a range of incident angles of at least 10°, preferably of at least 15°, at the operating wavelength. Also disclosed is an optical element having a reflective layer made from a material having a melting point higher than that of aluminum, as well as methods for producing such optical elements, and optical arrangements incorporating such optical elements.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus, as well as related components and methods. In some embodiments, a microlithographic projection exposure apparatus includes an illumination system and a projection objective, where the illumination system can illuminate an object plane of the projection objective and the projection objective can produce the image of the object plane on an image plane. A polarization-dependent transmission can be produced in the illumination system such that, for at least one polarization distribution in respect of the light impinging on the object plane, a non-homogeneous intensity distribution in the object plane is obtained. The non-homogeneous intensity distribution can afford a homogeneous intensity distribution in the image plane by virtue of polarization-dependent transmission properties of the projection objective.

Abstract: An optical element (1) made of a material that is transparent to wavelengths in the UV region, which optical element (1) includes an oleophobic coating (6, 7) outside of its optically free diameter whose disperse component of the surface energy is preferably 25 mN/m or less, particularly preferably 20 mN/m or less, in particular 15 mN/m or less. In addition or as an alternative, the optical element (1) within its optically free diameter comprises an oleophilic coating (9b, 9c) that is transparent to wavelengths in the UV region, with the disperse component of the surface energy of this coating preferably being more than 25 mN/m, particularly preferably more than 30 mN/m, in particular more than 40 mN/m. The optical element may be provided in an arrangement in which it dips at least partially into an organic liquid.

Abstract: The disclosure relates to optical systems, such as illumination devices or projection objectives of microlithographic projection exposure apparatuses, that include at least one optical element having at least one curved lens surface which carries an interference layer system. The interference layer system includes an alternating sequence of layers. At least one of the layers is subdivided by at least one intermediate layer having a thickness of not more than 5 nanometers. A column structure which is formed in the at least one subdivided layer is interrupted by the at least one intermediate layer.

Abstract: An objective and a method for operating an objective, in particular a projection objective or an illumination objective for microlithography for imaging a reticle onto a wafer, with a plurality of optical elements that are arranged along a ray path, wherein at least one optical element of a first kind (1) is provided, which is irradiated only partially by a ray bundle, wherein the one or more optical element(s) of the first kind are rotatably mounted or positionable about the optical axis or an axis parallel thereto, wherein, for each optical element of the first kind at least two mounting positions are provided, and wherein the rotation angle between the two mounting positions is defined by the surface (7) irradiated by the ray bundle such that, in the various mounting positions, the surfaces irradiated by the ray path do not overlap.

Abstract: A pellicle for use in microlithographic exposure apparatus (10) has, for an operating wavelength of the apparatus, a maximum transmittance for light rays (56) that obliquely impinge on the pellicle (34; 134; 234). This ensures smaller variations of the transmittance over a broad range of angles of incidence, as it occurs in very high numerical aperture projection lenses.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus, as well as related components and methods. In some embodiments, a microlithographic projection exposure apparatus includes an illumination system and a projection objective, where the illumination system can illuminate an object plane of the projection objective and the projection objective can produce the image of the object plane on an image plane. A polarization-dependent transmission can be produced in the illumination system such that, for at least one polarization distribution in respect of the light impinging on the object plane, a non-homogeneous intensity distribution in the object plane is obtained. The non-homogeneous intensity distribution can afford a homogeneous intensity distribution in the image plane by virtue of polarization-dependent transmission properties of the projection objective.

Abstract: A method of processing an optical element which has a substrate (110) and a layer system (120) applied to the substrate (110), wherein the layer system (120) in a starting condition has a plurality of volume defects (130), wherein the method includes at least partially filling at least one of the volume defects (130) with a filling material (140). Also disclosed is an associated method of manufacturing an optical element.

Abstract: An optical element (1) made of a material that is transparent to wavelengths in the UV region, which optical element (1) includes an oleophobic coating (6, 7) outside of its optically free diameter whose disperse component of the surface energy is preferably 25 mN/m or less, particularly preferably 20 mN/m or less, in particular 15 mN/m or less. In addition or as an alternative, the optical element (1) within its optically free diameter comprises an oleophilic coating (9b, 9c) that is transparent to wavelengths in the UV region, with the disperse component of the surface energy of this coating preferably being more than 25 mN/m, particularly preferably more than 30 mN/m, in particular more than 40 mN/m. The optical element may be provided in an arrangement in which it dips at least partially into an organic liquid.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus, such as are used for the production of large-scale integrated electrical circuits and other microstructured components. The disclosure relates in particular to coatings of optical elements in order to increase or reduce the reflectivity.

Abstract: In a projection objective provided for imaging a pattern arranged in an object plane of the projection objective into an image plane of the projection objective with the aid of an immersion medium arranged between a last optical element of the projection objective in the light path and the image plane, the last optical element has a transparent substrate and a protective layer system that is fitted to the substrate, is provided for contact with the immersion medium and serves for increasing the resistance of the last optical element to degradation caused by the immersion medium.

Abstract: In a projection objective provided for imaging a pattern arranged in an object plane of the projection objective into an image plane of the projection objective with the aid of an immersion medium arranged between a last optical element of the projection objective in the light path and the image plane, the last optical element has a transparent substrate and a protective layer system that is fitted to the substrate, is provided for contact with the immersion medium and serves for increasing the resistance of the last optical element to degradation caused by the immersion medium.

Abstract: An optical element (14) transparent for radiation with a wavelength ? in the ultraviolet wavelength range below 250 nm, in particular at 193 nm, comprises a substrate (17) with a refractive index nS larger than 1.6, and an antireflection coating (16) formed on at least part of the surface of the substrate (17) between the substrate (17) and an ambient medium with a refractive index nA, preferably with nA=1.0. The antireflection coating (16) consists of a single layer of a material with a refractive index nL of about nL=?{square root over (nAnS)}, in particular nL>1.3, and the optical thickness dL of the single layer is about ?/4. The optical element (14) is preferably part of a projection objective (5) in a microlithography projection exposure apparatus (1) and located adjacent to a light-sensitive substrate (10).

Abstract: In a projection objective for imaging a pattern arranged in the object plane of the projection objective into the image plane of the projection objective, at least one optical component is provided which has a substrate in which at least one substrate surface is covered with an interference layer system having a great spatial modulation of the reflectance and/or of the transmittance over a usable cross section of the optical component, the modulation being adapted to a spatial transmission distribution of the remaining components of the projection objective in such a way that an intensity distribution of the radiation that is measured in a pupil surface has a substantially reduced spatial modulation in comparison with a projection objective without the interference layer system.

Abstract: Objective, in particular a projection objective for a microlithography projection-exposure installation, with at least one fluoride crystal lens. A reduction in the detrimental influence of birefringence is achieved if this lens is a (100)-lens with a lens axis which is approximately perpendicular to the {100} crystallographic planes or to the crystallographic planes equivalent thereto of the fluoride crystal. In the case of objectives with at least two fluoride crystal lenses, it is favorable if the fluoride crystal lenses are arranged such that they are rotated with respect to one another. The lens axes of the fluoride crystal lenses may in this case point not only in the <100> crystallographic direction but also in the <111> crystallographic direction or in the <110> crystallographic direction.