Patents by Inventor Alexandra Wirth

Alexandra Wirth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Compositions for the currentless deposition of ternary materials for use in the semiconductor industry
    Patent number: 9062378
    Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: June 23, 2015
    Assignee: BASF AKTIENGESELLSCHAFT
    Inventor: Alexandra Wirth
  • COMPOSITIONS FOR THE CURRENTLESS DEPOSITION OF TERNARY MATERIALS FOR USE IN THE SEMICONDUCTOR INDUSTRY
    Publication number: 20110124191
    Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.
    Type: Application
    Filed: November 1, 2010
    Publication date: May 26, 2011
    Applicant: BASF Aktiengesellschaft
    Inventor: Alexandra WIRTH
  • Compositions for the currentless deposition of ternary materials for use in the semiconductor industry
    Patent number: 7850770
    Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.
    Type: Grant
    Filed: April 22, 2004
    Date of Patent: December 14, 2010
    Assignee: BASF Aktiengesellschaft
    Inventor: Alexandra Wirth
  • Composition for the currentless deposition of ternary materials for use in the semiconductor industry
    Publication number: 20060278123
    Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.
    Type: Application
    Filed: April 22, 2004
    Publication date: December 14, 2006
    Applicant: BASF Aktiengesellschaft
    Inventor: Alexandra Wirth