Abstract: A delivery system for the deployment of an implant includes a delivery catheter, a tissue penetrating element disposed on an open distal end of the delivery catheter, and a guard member comprising a proximal portion disposed over, and translatable relative to, the respective tissue penetrating element and distal end of the delivery catheter, the guard member defining a lumen configured to receive and cover the tissue penetrating element, the lumen defining a longitudinal axis of the guard member, wherein the proximal portion of the guard member transitions into a split-open distal portion adjacent a distal opening of the lumen, the split-open distal portion comprising a contour configured to engage and deflect the tissue penetrating element at an angle relative to the longitudinal axis of the guard member when the guard member is translated proximally relative to the tissue penetrating element.

Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.

Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.

Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.

Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.